Analytical modeling and simulation of workfunction engineered gate junctionless high-k dielectric double gate Mosfet: a comparative study

2015 ◽  
Author(s):  
S. Sarkhel ◽  
S.K. Sarkar ◽  
N. Bagga
Keyword(s):  
Comparative Study ◽  
Modeling And Simulation ◽  
Analytical Modeling ◽  
Double Gate ◽  
High K ◽  
Double Gate Mosfet ◽  
High K Dielectric

scholarly journals Analysis of on-off current ratio in asymmetrical junctionless double gate MOSFET using high-k dielectric materials

2021 ◽  
Vol 11 (5) ◽  
pp. 3882
Author(s):  
Hakkee Jung ◽  
Byungon Kim
Keyword(s):  
Dielectric Material ◽  
Dielectric Materials ◽  
Double Gate ◽  
Short Channel ◽  
Current Ratio ◽  
Arithmetic Average ◽  
High K ◽  
Double Gate Mosfet ◽  
High K Dielectric ◽  
High Dielectric

<span>The variation of the on-off current ratio is investigated when the asymmetrical junctionless double gate MOSFET is fabricated as a SiO<sub>2</sub>/high-k dielectric stacked gate oxide. The high dielectric materials have the advantage of reducing the short channel effect, but the rise of gate parasitic current due to the reduction of the band offset and the poor interface property with silicon has become a problem. To overcome this disadvantage, a stacked oxide film is used. The potential distributions are obtained from the Poission equation, and the threshold voltage is calculated from the second derivative method to obtain the on-current. As a result, this model agrees with the results from other papers. </span><span>The on-off current ratio is in proportion to the arithmetic average of the upper and lower high dielectric material thicknesses. The on-off current ratio of 10<sup>4</sup> or less is shown for SiO<sub>2</sub>, but the on-off current ratio for TiO<sub>2</sub> (<em>k</em>=80) increases to 10<sup>7</sup> or more.</span>

scholarly journals 2-D analytical modeling of dual material gate fully depleted SOI MOSFET with high-k dielectric

2008 ◽  
Vol 57 (6) ◽  
pp. 3807
Author(s):  
Luan Su-Zhen ◽  
Liu Hong-Xia ◽  
Jia Ren-Xu ◽  
Cai Nai-Qiong
Keyword(s):  
Analytical Modeling ◽  
Fully Depleted ◽  
Soi Mosfet ◽  
High K ◽  
High K Dielectric ◽  
Dual Material

Modeling and Simulation of MOSFET (High-k Dielectric) Using Genetic Algorithms

2021 ◽  
Vol 13 (6) ◽  
pp. 06004-1-06004-5
Author(s):  
Abdelkrim Mostefai ◽  
◽  
Smail Berrah ◽  
Hamza Abid ◽  
◽  
...  
Keyword(s):  
Genetic Algorithms ◽  
Modeling And Simulation ◽  
High K ◽  
High K Dielectric
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