Effect Of Intrinsic Layer On The Performance Of InGaP/GaAs Dual Junction Solar Cell

2015 ◽  
Author(s):  
S.R. Routray ◽  
G.S. Sahoo ◽  
G.P. Mishra
Keyword(s):  
Solar Cell ◽  
Junction Solar Cell

The Effect of Concentrated Light Intensity on Temperature Coefficient of the InGaP/InGaAs/Ge Triple-Junction Solar Cell

2015 ◽  
Vol 8 (1) ◽  
pp. 106-111 ◽  
Author(s):  
Zilong Wang ◽  
Hua Zhang ◽  
Wei Zhao ◽  
Zhigang Zhou ◽  
Mengxun Chen
Keyword(s):  
Solar Cell ◽  
Light Intensity ◽  
Temperature Dependence ◽  
Temperature Coefficient ◽  
Triple Junction ◽  
Concentration Ratio ◽  
Crystalline Silicon ◽  
Photovoltaic System ◽  
Solar Pv ◽  
Junction Solar Cell

Research on automatic tracking solar concentrator photovoltaic systems has gained increasing attention in developing the solar PV technology. A paraboloidal concentrator with secondary optic is developed for a three-junction GaInP/GalnAs/Ge solar cell. The concentration ratio of this system is 200 and the photovoltaic cell is cooled by the heat pipe. A detailed analysis on the temperature coefficient influence factors of triple-junction solar cell under different high concentrations (75X, 100X, 125X, 150X, 175X and 200X) has been conducted based on the dish-style concentration photovoltaic system. The results show that under high concentrated light intensity, the temperature coefficient of Voc of triple-junction solar cell is increasing as the concentration ratio increases, from -10.84 mV/°C @ 75X growth to -4.73mV/°C @ 200X. At low concentration, the temperature coefficient of Voc increases rapidly, and then increases slowly as the concentration ratio increases. The temperature dependence of η increased from -0.346%/°C @ 75X growth to - 0.103%/°C @ 200X and the temperature dependence of Pmm and FF increased from -0.125 W/°C, -0.35%/°C @ 75X growth to -0.048W/°C, -0.076%/°C @ 200X respectively. It indicated that the temperature coefficient of three-junction GaInP/GalnAs/Ge solar cell is better than that of crystalline silicon cell array under concentrating light intensity.

scholarly journals Wireless photoelectrochemical water splitting using triple-junction solar cell protected by TiO2

2021 ◽  
Vol 2 (2) ◽  
pp. 100340
Author(s):  
Choongman Moon ◽  
Brian Seger ◽  
Peter Christian Kjærgaard Vesborg ◽  
Ole Hansen ◽  
Ib Chorkendorff
Keyword(s):  
Solar Cell ◽  
Water Splitting ◽  
Triple Junction ◽  
Photoelectrochemical Water Splitting ◽  
Junction Solar Cell

scholarly journals GaInP/GaAs/poly-Si Multi-Junction Solar Cells by in Metal Balls Bonding

Crystals ◽  
2021 ◽  
Vol 11 (7) ◽  
pp. 726
Author(s):  
Ray-Hua Horng ◽  
Yu-Cheng Kao ◽  
Apoorva Sood ◽  
Po-Liang Liu ◽  
Wei-Cheng Wang ◽  
...  
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Low Temperature ◽  
Triple Junction ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Open Circuit ◽  
Metal Line ◽  
Solar Simulator ◽  
Junction Solar Cell

In this study, a mechanical stacking technique has been used to bond together the GaInP/GaAs and poly-silicon (Si) solar wafers. A GaInP/GaAs/poly-Si triple-junction solar cell has mechanically stacked using a low-temperature bonding process which involves micro metal In balls on a metal line using a high-optical-transmission spin-coated glue material. Current–voltage measurements of the GaInP/GaAs/poly-Si triple-junction solar cells have carried out at room temperature both in the dark and under 1 sun with 100 mW/cm2 power density using a solar simulator. The GaInP/GaAs/poly-Si triple-junction solar cell has reached an efficiency of 24.5% with an open-circuit voltage of 2.68 V, a short-circuit current density of 12.39 mA/cm2, and a fill-factor of 73.8%. This study demonstrates a great potential for the low-temperature micro-metal-ball mechanical stacking technique to achieve high conversion efficiency for solar cells with three or more junctions.

Strain Dependent Performance Analysis of InGaN Multi-junction Solar Cell

2021 ◽  
Author(s):  
Md. Aminur Rahman ◽  
Md. Jahirul Islam ◽  
Md. Rafiqul Islam ◽  
M. A. Parvez Mahmud
Keyword(s):  
Solar Cell ◽  
Performance Analysis ◽  
Junction Solar Cell ◽  
Strain Dependent

scholarly journals Investigation of the Carrier Movement through the Tunneling Junction in the InGaP/GaAs Dual Junction Solar Cell Using the Electrically and Optically Biased Photoreflectance Spectroscopy

Energies ◽  
2021 ◽  
Vol 14 (3) ◽  
pp. 638
Author(s):  
Sanam SaeidNahaei ◽  
Hyun-Jun Jo ◽  
Sang Jo Lee ◽  
Jong Su Kim ◽  
Sang Jun Lee ◽  
...  
Keyword(s):  
Solar Cell ◽  
Electric Field ◽  
Electric Fields ◽  
Bias Voltage ◽  
Tunnel Junction ◽  
Photogenerated Carrier ◽  
Internal Electric Field ◽  
Junction Solar Cell ◽  
Photoreflectance Spectroscopy ◽  
Dc Bias

For examining the carrier movements through tunnel junction, electrically and optically-biased photoreflectance spectroscopy (EBPR and OBPR) were used to investigate the internal electric field in the InGaP/GaAs dual junction solar cell at room temperature. At InGaP and GaAs, the strength of p-n junction electric fields (Fpn) was perturbed by the external DC bias voltage and CW light intensity for EBPR and OBPR experiments, respectively. Moreover, the Fpn was evaluated using the Fast Fourier Transform (FFT) of the Franz—Keldysh oscillation from PR spectra. In the EBPR, the electric field decreased by increasing the DC bias voltage, which also decreased the potential barrier. In OBPR, when incident CW light is absorbed by the top cell, the decrement of the Fpn in the GaAs cell indicates that the photogenerated carriers are accumulated near the p-n junction. Photogenerated carriers in InGaP can pass through the tunnel junction, and the PR results show the contribution of the modification of the electric field by the photogenerated carriers in each cell. We suggest that PR spectroscopy with optical-bias and electrical-bias could be analyzed using the information of the photogenerated carrier passed through the tunnel junction.

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