The heats of formation of metal halides. Aluminium fluoride

1954 ◽  
Vol 50 ◽  
pp. 477 ◽  
Author(s):  
P. Gross ◽  
C. Hayman ◽  
D. L. Levi
Keyword(s):  
Heats Of Formation ◽  
Metal Halides ◽  
Aluminium Fluoride

The heats of formation of metal halides. Niobium and tantalum pentachlorides

1960 ◽  
Vol 56 ◽  
pp. 318 ◽  
Author(s):  
P. Gross ◽  
C. Hayman ◽  
D. L. Levi ◽  
G. L. Wilson
Keyword(s):  
Heats Of Formation ◽  
Metal Halides

Heats of formation of metal halides: pentabromides of niobium and tantalum

1962 ◽  
Vol 58 ◽  
pp. 890 ◽  
Author(s):  
P. Gross ◽  
C. Hayman ◽  
D. L. Levi ◽  
G. L. Wilson
Keyword(s):  
Heats Of Formation ◽  
Metal Halides

Argon Plasma Induced Surface Modifications For Resistless Patterning Of Aluminium Films

1991 ◽  
Vol 223 ◽  
Author(s):  
Neeta Agrawal ◽  
R. D. Tarey ◽  
K. L. Chopra
Keyword(s):  
Etch Rate ◽  
Argon Plasma ◽  
Surface Modifications ◽  
Surface Chemical ◽  
Plasma Exposure ◽  
X Ray ◽  
Aluminium Fluoride ◽  
A New Technique ◽  
Plasma Exposure Time ◽  
Surface Chemical Modification

ABSTRACTArgon plasma exposure has been used to induce surface chemical modification of aluminium thin films, causing a drastic change in etch rate in standard HNO3/CH3COOH/H3PO4 etchant. The inhibition period was found to increase with power and Ar plasma exposure time. Auger electron and x-ray photoelectron spectroscopies have indicated formation of an aluminium fluoride (AlF3) surface layer due to fluorine contamination originating from the residue left in the plasma chamber during CF4 processing. The high etch selectivity between unexposed and argon plasma exposed regions has been exploited as a new technique for resistless patterning of aluminium.

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