Growth of zinc sulfide thin films with the successive ionic layer adsorption and reaction method as studied by atomic force microscopy

1995 ◽  
Vol 5 (7) ◽  
pp. 985-989 ◽  
Author(s):  
T. Kanniainen ◽  
S. Lindroos ◽  
T. Prohaska ◽  
G. Friedbacher ◽  
M. Leskelä ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Force Microscopy ◽  
Zinc Sulfide ◽  
Reaction Method ◽  
Force Microscopy ◽  
Atomic Force ◽  
Layer Adsorption ◽  
Ionic Layer

Growth of zinc sulfide thin films on (100)Si with the successive ionic layer adsorption and reaction method studied by atomic force microscopy

1998 ◽  
Vol 136 (1-2) ◽  
pp. 131-136 ◽  
Author(s):  
Mika P Valkonen ◽  
Seppo Lindroos ◽  
Roland Resch ◽  
Markku Leskelä ◽  
Gernot Friedbacher ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Force Microscopy ◽  
Zinc Sulfide ◽  
Reaction Method ◽  
Force Microscopy ◽  
Atomic Force ◽  
Layer Adsorption ◽  
Ionic Layer

Atomic force microscopy studies of ZnS films grown on (100) GaAs by the successive ionic layer adsorption and reaction method

1998 ◽  
Vol 13 (6) ◽  
pp. 1688-1692 ◽  
Author(s):  
Mika P. Valkonen ◽  
Seppo Lindroos ◽  
Tapio Kanniainen ◽  
Markku Leskelä ◽  
Roland Resch ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Force Microscopy ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Force Microscopy ◽  
Atomic Force ◽  
Layer Adsorption ◽  
Silar Technique ◽  
Ionic Layer

In this study zinc sulfide thin films were grown by the successive ionic layer adsorption and reaction (SILAR) technique on (100) GaAs substrates from aqueous precursor solutions. The atomic force microscopy (AFM) method was used to study the growth of the films up to a thickness of 180 nm. The ZnS thin films on (100) GaAs were smooth with an rms roughness of 0.2–1.9 nm depending on the film thickness. After the GaAs surface was covered with ZnS, the growth appeared to be nearly layerwise. In addition, in situ AFM studies were carried out to analyze the dissolution of (100) GaAs in water, which is a process competing with the thin film deposition by the SILAR.

scholarly journals Influence of the Substrate, Process Conditions, and Postannealing Temperature on the Properties of ZnO Thin Films Grown by the Successive Ionic Layer Adsorption and Reaction Method

ACS Omega ◽  
2021 ◽  
Vol 6 (4) ◽  
pp. 2665-2674
Author(s):  
Bijoy Chandra Ghos ◽  
Syed Farid Uddin Farhad ◽  
Md Abdul Majed Patwary ◽  
Shanta Majumder ◽  
Md. Alauddin Hossain ◽  
...  
Keyword(s):  
Thin Films ◽  
Zno Thin Films ◽  
Process Conditions ◽  
Reaction Method ◽  
Layer Adsorption ◽  
Ionic Layer

Atomic force microscopy of in situ deformed nickel thin films

1999 ◽  
Vol 353 (1-2) ◽  
pp. 194-200 ◽  
Author(s):  
C. Coupeau ◽  
J.F. Naud ◽  
F. Cleymand ◽  
P. Goudeau ◽  
J. Grilhé
Keyword(s):  
Thin Films ◽  
Atomic Force Microscopy ◽  
Force Microscopy ◽  
Nickel Thin Films ◽  
Atomic Force

Nanogranular Cadmium Sulfoselenide Thin Films Grown by Successive Ionic Layer Adsorption and Reaction Method for Optoelectronic Applications

2020 ◽  
Vol 217 (15) ◽  
pp. 2000002
Author(s):  
Tejasvinee S. Bhat ◽  
Sawanta S. Mali ◽  
Jyoti V. Patil ◽  
Shirish T. Killedar ◽  
Trishala R. Desai ◽  
...  
Keyword(s):  
Thin Films ◽  
Reaction Method ◽  
Layer Adsorption ◽  
Optoelectronic Applications ◽  
Cadmium Sulfoselenide ◽  
Ionic Layer

Nanocrystalline Solutions as Precursors to The Spray Deposition of Cdte Thin Films

1995 ◽  
Vol 382 ◽  
Author(s):  
Martin Pehnt ◽  
Douglas L. Schulz ◽  
Calvin J. Curtis ◽  
Helio R. Moutinho ◽  
Amy Swartzlander ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Force Microscopy ◽  
Grain Size ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Cdte Nanoparticles ◽  
Atomic Force ◽  
Vis Spectroscopy ◽  
Cdte Thin Films

ABSTRACTIn this article we report the first nanoparticle-derived route to smooth, dense, phase-pure CdTe thin films. Capped CdTe nanoparticles were prepared by injection of a mixture of Cd(CH3)2, (n-C8H17)3 PTe and (n-C8H17)3P into (n-C8H17)3PO at elevated temperatures. The resultant nanoparticles 32-45 Å in diameter were characterized by x-ray diffraction, UV-Vis spectroscopy, transmission electron microscopy, thermogravimetric analysis and energy dispersive x-ray spectroscopy. CdTe thin film deposition was accomplished by dissolving CdTe nanoparticles in butanol and then spraying the solution onto SnO2-coated glass substrates at variable susceptor temperatures. Smooth and dense CdTe thin films were obtained using growth temperatures approximately 200 °C less than conventional spray pyrolysis approaches. CdTe films were characterized by x-ray diffraction, UV-Vis spectroscopy, atomic force microscopy, and Auger electron spectroscopy. An increase in crystallinity and average grain size as determined by x-ray diffraction was noted as growth temperature was increased from 240 to 300 °C. This temperature dependence of film grain size was further confirmed by atomic force microscopy with no remnant nanocrystalline morphological features detected. UV-Vis characterization of the CdTe thin films revealed a gradual decrease of the band gap (i.e., elimination of nanocrystalline CdTe phase) as the growth temperature was increased with bulk CdTe optical properties observed for films grown at 300 °C.

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