Laser excitation spectra Ã2Π3/2â†�X2Π3/2of the bromoacetylene and deuterobromoacetylene cations in the gas phase

Author(s):  
John P. Maier ◽  
Liubomir Misev
1982 ◽  
Vol 72 (1-2) ◽  
pp. 101-110 ◽  
Author(s):  
Dieter Klapstein ◽  
John P. Maier ◽  
Liubomir Misev ◽  
Werner Zambach

2018 ◽  
Vol 18 (19) ◽  
pp. 14005-14015 ◽  
Author(s):  
Terry J. Dillon ◽  
John N. Crowley

Abstract. Pulsed laser excitation of NO2 (532–647 nm) or NO3 (623–662 nm) in the presence of H2O was used to initiate the gas-phase reaction NO2∗+H2O → products (Reaction R5) and NO3∗+H2O → products (Reaction R12). No evidence for OH production in Reactions (R5) or (R12) was observed and upper limits for OH production of k5b/k5<1×10-5 and k12b/k12<0.03 were assigned. The upper limit for k5b∕k5 renders this reaction insignificant as a source of OH in the atmosphere and extends the studies (Crowley and Carl, 1997; Carr et al., 2009; Amedro et al., 2011) which demonstrate that the previously reported large OH yield by Li et al. (2008) was erroneous. The upper limit obtained for k12b∕k12 indicates that non-reactive energy transfer is the dominant mechanism for Reaction (R12), though generation of small but significant amounts of atmospheric HOx and HONO cannot be ruled out. In the course of this work, rate coefficients for overall removal of NO3∗ by N2 (Reaction R10) and by H2O (Reaction R12) were determined: k10=(2.1±0.1)×10-11 cm3 molecule−1 s−1 and k12=(1.6±0.3)×10-10 cm3 molecule−1 s−1. Our value of k12 is more than a factor of 4 smaller than the single previously reported value.


1981 ◽  
Vol 103 (2) ◽  
pp. 326-329 ◽  
Author(s):  
Trevor Sears ◽  
Terry A. Miller ◽  
V. E. Bondybey

1985 ◽  
Vol 115 (4-5) ◽  
pp. 373-377 ◽  
Author(s):  
Martin Ochsner ◽  
Masaharu Tsuji ◽  
John P. Maier

2016 ◽  
Vol 18 (15) ◽  
pp. 10207-10217 ◽  
Author(s):  
Ivan Ljubić ◽  
Antti Kivimäki ◽  
Marcello Coreno

Core excitation (NEXAFS) C 1s, N 1s, and O 1s gas-phase spectra of stable nitroxide free radical TEMPO and two of its amide-substituted analogues are assigned from the onset of the absorptions to the vicinity of the core-ionization thresholds using the theoretical TDDFT and ΔDFT methods.


1988 ◽  
Vol 116 ◽  
Author(s):  
S. Zemon ◽  
C. Jagannath ◽  
S. K. Shastry ◽  
W. J. Miniscalco ◽  
G. Lambert

AbstractWe describe new results observed during resonant excitation in the excitonic region of GaAs grown directly on Si by organometallic vapor phase epitaxy. Two resolved features were found in the light hole photoluminescence (PL) region, one identified with a free exciton process and the other with donor-related transitions. Features which track the laser excitation line were observed and identified with a process in which a donor is excited from the n=l ground state to an n=2 excited state. The PL excitation spectra associated with these features have spectral widths as narrow as 1.5 meV. PL spectral widths of ~3 meV have been attained for the heavy hole exciton band, representing the narrowest value obtained for OMVPE material and an improvement of about 30% over our best previous results.


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