Kinetic study of the gas-phase decomposition of the trifluoroacetyl radical. Effects of temperature and pressure upon the rate constants

1985 ◽  
Vol 81 (6) ◽  
pp. 1471 ◽  
Author(s):  
J. Alistair Kerr ◽  
J. Paul Wright
Keyword(s):  
Kinetic Study ◽  
Gas Phase ◽  
Rate Constants ◽  
Phase Decomposition ◽  
Effects Of Temperature ◽  
Temperature And Pressure

A kinetic study of the reactions of OH radicals with fluoroethanes. Estimates of C—H bond strengths in fluoroalkanes

1983 ◽  
Vol 61 (5) ◽  
pp. 861-865 ◽  
Author(s):  
Jean-Pierre Martin ◽  
George Paraskevopoulos
Keyword(s):  
Kinetic Study ◽  
Gas Phase ◽  
Rate Constants ◽  
Flash Photolysis ◽  
Oh Radicals ◽  
Bond Dissociation Energies ◽  
Time Resolved ◽  
Dissociation Energies ◽  
Bond Strengths ◽  
Vacuum Uv

A kinetic study of the reactions of OH radicals with a series of fluoroethanes in the gas phase is presented. OH radicals were generated by flash photolysis of H2O vapor in the vacuum uv (λ > 165 nm) and were monitored in absorption by time-resolved attenuation of resonance radiation at 308.15 nm [OH(A2Σ+ → X2Π)]. The following absolute rate constants (in units of 109 cm3mol−1 s−1 at the 95% confidence limit) were determined at [Formula: see text][Formula: see text][Formula: see text][Formula: see text][Formula: see text]From a linear correlation of the present and previously published rate constants with bond dissociation energies, the following quantities (in kcal mol−1 at 298 K) were estimated to be: D(CH3CHF—H) = 96.3 ± 1.5, D(CH2FCHF—H = 98.8 ± 1.0, D(CF3CHF—H) = 103.5 ± 1.0, D(CHF2CF2—H) = 103.0 ± 1.5, and [Formula: see text][Formula: see text]

Eqilibrium Analysis of the TMGa-TMA1-AsH3-H2 Mocvd Epitaxial Growth System

1988 ◽  
Vol 131 ◽  
Author(s):  
Hyuk J. Moon ◽  
Thomas G. Stoebe ◽  
Brian K. Chadwick
Keyword(s):  
Gas Phase ◽  
Solid Phase ◽  
Total System ◽  
Method Of Calculation ◽  
System Pressure ◽  
Partial Pressures ◽  
Growth System ◽  
Effects Of Temperature ◽  
Temperature And Pressure ◽  
Thermodynamic Equilibrium State

ABSTRACTThe thermodynamic equilibrium state of the Ga-Al-As-C-H system was determined theoretically by means of an iterative equilibrium constant method. This method of calculation is presented and discussed. With very little operator input, the program is capable of computing the partial pressures of the gas-phase species present in the equilibrated system.In these calculations the system was considered to be saturated with solid-phase A1GaAs and included 58 plausible gas-phase intermediates which evolved from the initially present gas species; trimethylgallium, trimethylaluminum, arsine, and hydrogen. Temperature and total system pressure ranges investigated were 750–1100 K and 0.1 atm-1.0 atm, respectively. The effects of temperature and pressure variations, in addition to effects caused by changes in the appropriate atom ratios, have been delineated. The properties of this equilibrated system are compared with those from recent thermodynamic research efforts on AlGaAs systems consisting of only gaseous constituents.

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