scholarly journals Large enhancement of ferroelectric polarization in Hf0.5Zr0.5O2 films by low plasma energy pulsed laser deposition

2021 ◽  
Author(s):  
Tingfeng Song ◽  
Raul Solanas ◽  
Mengdi Qian ◽  
Ignasi Fina ◽  
Florencio Sanchez
Keyword(s):  
Pulsed Laser Deposition ◽  
Epitaxial Film ◽  
Ferroelectric Phase ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Ferroelectric Polarization ◽  
Polycrystalline Films ◽  
Plasma Energy ◽  
Large Enhancement

The ferroelectric phase of HfO2 is generally stabilized in polycrystalline films, which typically exhibit the highest polarization when deposited using low oxidizing conditions. In contrast, epitaxial film grown by pulsed...

Ionic liquid/ZnO(0001̄) single crystal and epitaxial film interfaces studied through a combination of electrochemical measurements and a pulsed laser deposition process under vacuum

2019 ◽  
Vol 21 (45) ◽  
pp. 25506-25512
Author(s):  
Mariko Kanai ◽  
Ko Watanabe ◽  
Shingo Maruyama ◽  
Yuji Matsumoto
Keyword(s):  
Ionic Liquid ◽  
Ionic Liquids ◽  
Pulsed Laser Deposition ◽  
Epitaxial Film ◽  
Pulsed Laser ◽  
Deposition Process ◽  
Laser Deposition ◽  
Zno Films ◽  
Doped Zno ◽  
Mg Doped

O-Polar ZnO(0001̄) single crystals and ZnO and Mg-doped ZnO films which were subsequently deposited on the ZnO crystals by pulsed laser deposition were electrochemically investigated through the interfaces with ionic liquids in a vacuum.

Low Electrically Resistive Transparent Indium-Tin-Oxide Epitaxial Film on (001) Surface of YSZ by Pulsed Laser Deposition

2000 ◽  
Vol 623 ◽  
Author(s):  
Hiromichi Ohta ◽  
Masahiro Orita ◽  
Masahiro Hirano ◽  
Hideo Hosono ◽  
Hiroshi Kawazoe ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Epitaxial Film ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Flat Substrate ◽  
Ito Thin Films ◽  
Almost All

AbstractHigh quality ITO thin films were grown hetero-epitaxially on extremely flat substrate of (001) YSZ by a pulsed laser deposition technique at a substrate temperature of 600°C. The crystal orientation relationship between the film and YSZ were confirmed as ITO (001) // YSZ (001) and ITO (010) // YSZ (010), respectively, by HR-XRD and HR-TEM. The carrier densities of the films were almost equal to Sn02 concentration in the films. That is, almost all the doped Sn4+ ions were activated to release electrons to the conduction band. The carrier densities of the films were enhanced up to 1.9×1021cm−3, while the Hall mobility showed a slight, almost linear, decrease from 55 to 40cm2V−1s−1 with increasing SnO2 concentration. The low resistivity is due to larger electron mobility, which most likely resulted from good crystal quality of the films. The optical transmissivity of the film exceeded 85% at wavelengths from 340 to 780nm.

Ferroelectricity of BiFeO3 Thin Films by Pulsed Laser Deposition and Effect of Atmosphere

2006 ◽  
Vol 320 ◽  
pp. 45-48
Author(s):  
Hyun Young Go ◽  
Naoki Wakiya ◽  
Keisuke Satoh ◽  
Masao Kondo ◽  
Jeffrey S. Cross ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Surface Roughness ◽  
Pulsed Laser Deposition ◽  
Epitaxial Film ◽  
Pulsed Laser ◽  
The Other ◽  
Laser Deposition ◽  
Phase Pure ◽  
Hysteresis Properties

In this study, BiFeO3 (BFO) epitaxial film was deposited on SrRuO3 (100)/SrTiO3 (100) substrates using pulsed laser deposition (PLD). Phase pure BFO thin film was obtained. Introducing a mask between the target and substrate in PLD improved the surface roughness from 47.8 nm (RMS, without mask) to 7.7 nm (RMS, with mask). The composition and electrical properties of BFO thin film were assessed after annealing for 1 h in Ar, N2, or O2 atmosphere at 600°C. The P-E hysteresis properties improved only in the O2 atmosphere. After annealing under O2 atmosphere, the leakage current decreased from 6.1 × 10-2 A/cm to 2.9 × 10-2 A/cm at 200 kV/cm, as in the other annealing atmospheres, but 2Pr increased from 35 BC/cm2 to 50 BC/cm2.

Synthesis and magnetic properties of manganite thin films on Si by polymer assisted (PAD) and pulsed laser deposition (PLD).

2012 ◽  
Vol 1449 ◽  
Author(s):  
J. M. Vila-Fungueiriño ◽  
B. Rivas-Murias ◽  
F. Rivadulla
Keyword(s):  
Thin Films ◽  
Aqueous Solution ◽  
Magnetic Properties ◽  
Metal Ions ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Polycrystalline Films ◽  
Si Substrates ◽  
Optimized Conditions

ABSTRACTWe report the synthesis of polycrystalline films of La1-xCaxMnO3 in Si (111) by Polymer Assisted Deposition (PAD). An aqueous solution polyethyleneimine (PEI) and different metal ions stabilized with EDTA, was spin coated on hydrophilized Si substrates and subsequently annealed under different atmospheres. Homogeneous, dense polycrystalline films are obtained at optimized conditions of 950 ºC under flowing O2. The morphology and magnetic properties of the samples are compared with films obtained by Pulsed Laser Deposition.

Microanalysis of silicate glass films grown on α-Al2O3 by pulsed-laser deposition

1993 ◽  
Vol 51 ◽  
pp. 438-439
Author(s):  
Michael P. Mallamaci ◽  
James Bentley ◽  
C. Barry Carter
Keyword(s):  
Liquid Phase ◽  
Single Crystal ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Ceramic Materials ◽  
Laser Deposition ◽  
Triple Junctions ◽  
Ion Milling ◽  
Multicomponent Oxides ◽  
Glass Films

Glass-oxide interfaces play important roles in developing the properties of liquid-phase sintered ceramics and glass-ceramic materials. Deposition of glasses in thin-film form on oxide substrates is a potential way to determine the properties of such interfaces directly. Pulsed-laser deposition (PLD) has been successful in growing stoichiometric thin films of multicomponent oxides. Since traditional glasses are multicomponent oxides, there is the potential for PLD to provide a unique method for growing amorphous coatings on ceramics with precise control of the glass composition. Deposition of an anorthite-based (CaAl2Si2O8) glass on single-crystal α-Al2O3 was chosen as a model system to explore the feasibility of PLD for growing glass layers, since anorthite-based glass films are commonly found in the grain boundaries and triple junctions of liquid-phase sintered α-Al2O3 ceramics.Single-crystal (0001) α-Al2O3 substrates in pre-thinned form were used for film depositions. Prethinned substrates were prepared by polishing the side intended for deposition, then dimpling and polishing the opposite side, and finally ion-milling to perforation.

Pulsed laser deposition of relaxor ferroelectric films

1998 ◽  
Vol 08 (PR9) ◽  
pp. Pr9-261-Pr9-264
Author(s):  
M. Tyunina ◽  
J. Levoska ◽  
A. Sternberg ◽  
V. Zauls ◽  
M. Kundzinsh ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Relaxor Ferroelectric ◽  
Laser Deposition ◽  
Ferroelectric Films

Pulsed laser deposition of PbMg1/3Nb2/3O3 thin films and PbMg1/3Nb2/3O3/PbTiO3 multilayers

2001 ◽  
Vol 11 (PR11) ◽  
pp. Pr11-65-Pr11-69
Author(s):  
N. Lemée ◽  
H. Bouyanfif ◽  
J. L. Dellis ◽  
M. El Marssi ◽  
M. G. Karkut ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition
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