Modified ferroelectric and photovoltaic properties of BiFe0.91Zr0.09O3 thin films via altered annealing atmospheres

2021 ◽  
Author(s):  
Zhibiao Ma ◽  
Huiying Liu ◽  
Lingxu Wang ◽  
Bingdong Yao ◽  
Yangyang Wang ◽  
...  
Keyword(s):  
Crystal Structure ◽  
Thin Films ◽  
Sol Gel ◽  
Structure Defect ◽  
Photovoltaic Properties ◽  
Glass Substrates ◽  
Ito Glass ◽  
Sol Gel Synthesis

In this work, BiFe0.91Zr0.09O3 (BFZrO) films are successfully prepared on ITO/glass substrates via sol-gel synthesis. The effects of different annealing atmospheres (air, O2, and N2) on the crystal structure, defect...

scholarly journals Epoxy/Silicone Blend Loaded with N-Doped CNT Composites: Study on the Optoelectronic Properties

2021 ◽  
Vol 2021 ◽  
pp. 1-11
Author(s):  
Younes Ziat ◽  
Hamza Belkhanchi ◽  
Maryama Hammi ◽  
Ousama Ifguis
Keyword(s):  
Thin Films ◽  
Urbach Energy ◽  
Optical Transition ◽  
Sol Gel ◽  
Visible Range ◽  
Visible Spectroscopy ◽  
Glass Substrates ◽  
Optical Gap ◽  
Ito Glass ◽  
Uv Visible

Thin films of epoxy/silicone loaded with N-CNT were prepared by a method of sol-gel and deposited on ITO glass substrates at room temperature. The properties of the loaded monolayer samples (0.00, 0.07, 0.1, and 0.2 wt% N-CNTs) were analyzed by UV-visible spectroscopy. The transmittance for the unloaded thin films is 88%, and an average transmittance for the loaded thin film is about 42 to 67% in the visible range. The optical properties were studied from UV-visible spectroscopy to examine the transmission spectrum, optical gap, Tauc verified optical gap, and Urbach energy, based on the envelope method proposed by Swanepoel (1983). The results indicate that the adjusted optical gap of the film has a direct optical transition with an optical gap of 3.61 eV for unloaded thin films and 3.55 to 3.19 eV for loaded thin films depending on the loading rate. The optical gap is appropriately adapted to the direct transition model proposed by Tauc et al. (1966); its value was 3.6 eV for unloaded thin films and from 3.38 to 3.1 eV for loaded thin films; then, we determined the Urbach energy which is inversely variable with the optical gap, where Urbach’s energy is 0.19 eV for the unloaded thin films and varies from 0.43 to 1.33 eV for the loaded thin films with increasing rate of N-CNTs. Finally, nanocomposite epoxy/silicone N-CNT films can be developed as electrically conductive materials with specific optical characteristics, giving the possibility to be used in electrooptical applications.

scholarly journals Opto-Electronic Properties of Epoxy/Silicone Blend Based Thin Films

2021 ◽  
Author(s):  
Younes Ziat ◽  
Hamza Belkhanchi ◽  
Maryama Hammi ◽  
Charaf Laghlimi ◽  
A Moutcine
Keyword(s):  
Thin Films ◽  
Indium Tin Oxide ◽  
Optical Transition ◽  
Sol Gel ◽  
Glass Substrates ◽  
Nanostructured Thin Films ◽  
Ito Glass ◽  
Potential Applications ◽  
Optical Applications ◽  
Nitrogen Doped Carbon

Abstract Recently, the rise of two dimensional amorphous nanostructured thin films have ignited a big interest because of their intriguingly isotropic structural and physical properties leading to potential applications in the nano-optoelectronics. However, according to literature, most of optoelectronic properties are investigated on chalcogenides related heterostructures. This has motivated the present work aiming to provide a new platform for the fabrication, examination of the properties and the applications of 2D nanostructured thin films based on epoxy/silicone blend. Thin films of Epoxy/Silicone loaded with nitrogen doped carbon nanotubes (N-CNTs) were prepared by sol-gel method and deposited on Indium Tin Oxide (ITO) glass substrates at room temperature. Further examination of optical properties aimed the investigation of optical pseudo-gap and Urbach energy and enabled the determination of processed films thickness based on Manifacier and Swanepol method. The results indicated that the unloaded thin films have a direct optical transition with a value of 3.61 eV followed by noticeable shift towards narrowing gaps depending on the loading rate. Urbach's energy is 0.19 eV for the unloaded thin films, and varies from 0.43 to 1.33 eV for the loaded thin films with increasing the rate of N-CNTs. It is inversely variable with the optical pseudo-gap. Finally, Epoxy/Silicone loaded with N-CNTs nanocomposites films can be developed as active layers with specific optical characteristics, giving the possibility to be used in electro-optical applications.

Sol–gel synthesis of PZT thin films on FTO glass substrates for electro-optic devices

2019 ◽  
Vol 93 (3) ◽  
pp. 623-632
Author(s):  
Ali Shoghi ◽  
Hossein Abdizadeh ◽  
Amid Shakeri ◽  
Mohammad Reza Golobostanfard
Keyword(s):  
Thin Films ◽  
Sol Gel ◽  
Pzt Thin Films ◽  
Glass Substrates ◽  
Electro Optic ◽  
Sol Gel Synthesis ◽  
Fto Glass

Sol–gel synthesis of nanoporous NiCo2O4 thin films on ITO glass as high-performance supercapacitor electrodes

2016 ◽  
Vol 42 (9) ◽  
pp. 11411-11416 ◽  
Author(s):  
Yang Liu ◽  
Ni Wang ◽  
Chengtao Yang ◽  
Wencheng Hu
Keyword(s):  
Thin Films ◽  
High Performance ◽  
Sol Gel ◽  
Ito Glass ◽  
Sol Gel Synthesis

FERROELECTRIC PROPERTIES OF CaBi4Ti4O15 THIN FILMS ON ITO/GLASS SUBSTRATES PREPARED BY SOL-GEL TECHNOLOGY

2012 ◽  
Vol 06 ◽  
pp. 91-97
Author(s):  
CHIEN-MIN CHENG ◽  
MING-CHANG KUAN ◽  
KAI-HUNAG CHEN ◽  
JEN-HWAN TSAI
Keyword(s):  
Thin Films ◽  
Leakage Current Density ◽  
Current Density ◽  
Coercive Field ◽  
Glass Substrate ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Electrical Field ◽  
Glass Substrates ◽  
Ito Glass

In this study, ferroelectric CaBi 4 Ti 4 O 15 (CBT) thin films prepared by sol-gel method and deposited on ITO/glass substrates for applications in system-on-panel (SOP) devices were fabricated and investigated. The electrical and physical characteristics of as-deposited and annealed CBT thin films for metal-ferroelectric-metal (MFM) structures was discussed and investigated. In addition, the ferroelectric properties in annealed CBT thin films on ITO/glass substrate showed and exhibited clear polarization versus electrical field curves. From p - E curves, the 2 P r value and coercive field of annealed CBT thin films were calculated to be 10μC/cm2 and 180 kV/cm, respectively. Finally, the maximum capacitance, leakage current density, and transmittance within the ultraviolet-visible (UV–vis) spectrum were also investigated and discussed.

Preparation and Properties of Multiferroic La-Doped BiFeO3 Thin Film

2012 ◽  
Vol 486 ◽  
pp. 417-421 ◽  
Author(s):  
Xiao Yan Zhang ◽  
Xi Wei Qi ◽  
Jian Quan Qi ◽  
Xuan Wang
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Indium Tin Oxide ◽  
Remanent Polarization ◽  
Sol Gel ◽  
Secondary Phases ◽  
Glass Substrates ◽  
Ito Glass ◽  
Sol Gel Process ◽  
La Doped

Multiferroic La-doped Bi1-xLaxFeO3 thin films were prepared on conductive indium tin oxide (ITO)/glass substrates through a simple sol-gel process. The crystal structure of La-doped Bi1-xLaxFeO3 thin films annealed at different temperature was determined to be rhombohedral of R3m space and free of secondary phases. The grain size of La-doped BiFeO3 thin films tends to become larger and the grain boundary is gradually ambiguous compared to pure BiFeO3. The double remanent polarization 2Pr of Bi0.9La0.1FeO3 thin film annealed at 500°C is 6.66 µC/cm2, which is slightly improved than that of pure BiFeO3 thin film. With the increase of La-doping levels, the dielectric constant is increased and the dielectric loss is obviously decreased.

Fluorine Doping Effects on the Electric Property of BiFeO3 Thin Films

2014 ◽  
Vol 624 ◽  
pp. 161-164
Author(s):  
Fang Long Xu ◽  
Peng Jun Zhao ◽  
Jia Qi Zhang ◽  
Xin Qian Xiong
Keyword(s):  
Thin Films ◽  
Direct Evidence ◽  
Sol Gel ◽  
Electric Polarization ◽  
Rhombohedral Structure ◽  
X Ray Diffraction ◽  
Glass Substrates ◽  
Doping Effects ◽  
Ito Glass ◽  
Multiferroic Oxides

F doping BiFeO3-xFx (x=0, 0.02, 0.04, 0.06, 0.08) thin films were successfully fabricated on ITO/glass substrates by sol-gel method. X-ray diffraction analysis indicated that the un-doped BiFeO3 and F doping BiFeO3 thin films presented rhombohedral structure with the space group R3c. F-doping is found to significantly enhance the dielectric constant and decrease the leakage current density for x=0.08 compared with x=0. This study provides direct evidence that the multiferroic characteristics of BiFeO3 are sensitive to the anion doping, such as F, providing a convenient alternative to manipulate the electric polarization in multiferroic oxides.

Preparation and Characterization of BiFeO3 Film via Sol-Gel Spin-Coating Process

2011 ◽  
Vol 492 ◽  
pp. 202-205 ◽  
Author(s):  
Xi Wei Qi ◽  
Xiao Yan Zhang ◽  
Xuan Wang ◽  
Hai Bin Sun ◽  
Jian Quan Qi
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Indium Tin Oxide ◽  
Sol Gel ◽  
Secondary Phases ◽  
Force Microscopy ◽  
Glass Substrates ◽  
Atomic Force ◽  
Ito Glass

BiFeO3 thin films were spin-coated on conductive indium tin oxide (ITO)/glass substrates by a simple sol-gel possess annealed at 470-590°C. The crystal structure of as-prepared BiFeO3 thin films annealed at different temperature was determined to be rhombohedral of R3m space and free of secondary phases was also confirmed. Cross section scanning electron microscope (SEM) pictures revealed that the thickness of BiFeO3 thin film was about 320 nm. The double remanent polarization 2Pr of BiFeO3 thin film annealed at 500°C is 2.5 μC/cm2 without applied field at room temperature. Image of atomic force microscopy indicated that the root-mean-square surface roughness value of BiFeO3 thin film was 6.13 nm.

Effect of Lithium-Doped on the Crystal Structure and Morphology of ZnO Nanorod Arrays

2012 ◽  
Vol 602-604 ◽  
pp. 235-238
Author(s):  
Yang Lin Liu ◽  
Xue Chen Duan ◽  
Shu Yun Liu ◽  
Yan Yan Liu
Keyword(s):  
Crystal Structure ◽  
Thin Films ◽  
Sol Gel ◽  
Processing Parameters ◽  
Zno Nanorod ◽  
Nanorod Arrays ◽  
Zno Nanorod Arrays ◽  
Glass Substrates ◽  
Structure And Morphology ◽  
Nano Structures

Lithium-doped zinc oxide(ZLO) thin films were deposited on glass substrates by sol-gel method.And then by controlling processing parameters such as the amount of doped lithium and stability, etc,Well-aligned ZLO nanorod arrays were successfully grown on substrates by hydrothermal method, where the substrates were spin-coated with seed layer.The experiments show the 5% Li-doped and diameter of about 50nm of ZLO thin films nanorod arrays has the best performance photoluminescence and surfactants can promote the growth of ZLO rod-like nano-structures and contribute to the formation of ZLO nanorod arrays with highly oriented.

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