High magnetoresistance and perfect spin filtering effect in silicane/germanene based magnetic Li0.5CrI3|Si/Ge|Li0.5CrI3 tunnel junctions

2021 ◽  
Vol 9 (39) ◽  
pp. 13799-13809
Author(s):  
Jie Liu ◽  
Yaqing Chen ◽  
Hong Cui ◽  
Xiaotian Wang ◽  
Yibin Zhang ◽  
...  
Keyword(s):  
Tunnel Junctions ◽  
Filtering Effect ◽  
Spin Filtering

Silicane/germanane based Li0.5CrI3|Si/Ge|Li0.5CrI3 MTJs show large TMR and perfect spin filtering effect.

Perfect Spin Filtering Effect on Fe3GeTe2-Based Van der Waals Magnetic Tunnel Junctions

2020 ◽  
Vol 124 (50) ◽  
pp. 27429-27435
Author(s):  
Lishu Zhang ◽  
Tao Li ◽  
Jie Li ◽  
Yanyan Jiang ◽  
Jiaren Yuan ◽  
...  
Keyword(s):  
Tunnel Junctions ◽  
Van Der Waals ◽  
Magnetic Tunnel Junctions ◽  
Filtering Effect ◽  
Spin Filtering

scholarly journals Strength of the symmetry spin-filtering effect in magnetic tunnel junctions

2016 ◽  
Vol 94 (17) ◽  
Author(s):  
Sergey V. Faleev ◽  
Oleg N. Mryasov ◽  
Stuart S. P. Parkin
Keyword(s):  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Filtering Effect ◽  
Spin Filtering

Significant tunneling magnetoresistance and excellent spin filtering effect in CrI3-based van der Waals magnetic tunnel junctions

2020 ◽  
Vol 22 (26) ◽  
pp. 14773-14780 ◽  
Author(s):  
Zhi Yan ◽  
Ruiqiang Zhang ◽  
Xinlong Dong ◽  
Shifei Qi ◽  
Xiaohong Xu
Keyword(s):  
Transport Properties ◽  
Negative Differential Resistance ◽  
Tunnel Junctions ◽  
Van Der Waals ◽  
Magnetic Tunnel Junctions ◽  
Differential Resistance ◽  
Tunneling Magnetoresistance ◽  
Positive Bias ◽  
Filtering Effect ◽  
Spin Filtering

The transport properties of CrI3/h-BN/n·CrI3 (n = 1, 2, 3, 4) MTJs under positive bias voltages exhibit an interesting odd-even effect. Significant tunneling magnetoresistance, a perfect spin filtering effect and remarkable negative differential resistance were obtained.

scholarly journals Vacancy tuned thermoelectric properties and high spin filtering performance in graphene/silicene heterostructures

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Zainab Gholami ◽  
Farhad Khoeini
Keyword(s):  
Electric Fields ◽  
High Spin ◽  
High Efficiency ◽  
Practical Applications ◽  
External Electric Fields ◽  
Ferromagnetic Exchange ◽  
High Spin Polarization ◽  
Filtering Effect ◽  
Spin Switching ◽  
Spin Filtering

AbstractThe main contribution of this paper is to study the spin caloritronic effects in defected graphene/silicene nanoribbon (GSNR) junctions. Each step-like GSNR is subjected to the ferromagnetic exchange and local external electric fields, and their responses are determined using the nonequilibrium Green’s function (NEGF) approach. To further study the thermoelectric (TE) properties of the GSNRs, three defect arrangements of divacancies (DVs) are also considered for a larger system, and their responses are re-evaluated. The results demonstrate that the defected GSNRs with the DVs can provide an almost perfect thermal spin filtering effect (SFE), and spin switching. A negative differential thermoelectric resistance (NDTR) effect and high spin polarization efficiency (SPE) larger than 99.99% are obtained. The system with the DV defects can show a large spin-dependent Seebeck coefficient, equal to Ss ⁓ 1.2 mV/K, which is relatively large and acceptable. Appropriate thermal and electronic properties of the GSNRs can also be obtained by tuning up the DV orientation in the device region. Accordingly, the step-like GSNRs can be employed to produce high efficiency spin caloritronic devices with various features in practical applications.

Magnetic tunneling junctions based on 2D CrI3 and CrBr3: spin filtering effects and high tunnel magnetoresistance via energy band difference

2021 ◽  
Author(s):  
Li Liu ◽  
Shizhuo Ye ◽  
Jin He ◽  
Qijun Huang ◽  
Hao Wang ◽  
...  
Keyword(s):  
Bias Voltage ◽  
Tunnel Junctions ◽  
Van Der Waals ◽  
Magnetic Tunnel Junctions ◽  
Differential Resistance ◽  
High Tunnel ◽  
Voltage Range ◽  
Negative Differential Resistance Effect ◽  
Magnetoresistance Ratio ◽  
Spin Filtering

Abstract Recently, the study on two-dimensional materials expands to the field of spintronics. The intrinsically ferromagnetic van der Waals materials such as CrI3 and CrBr3 receive much attention due to nearly 100% spin polarization and good stability, resulting in excellent performance in magnetic tunnel junctions. In this work, we design the magnetic tunnel junctions of Cu/CrI3/Cu and Cu/CrBr3/Cu with the electrodes of Cu(111) and the tunneling barrier of 4-monolayer CrI3 or CrBr3. Our first-principle calculations combined with nonequilibrium Green’s function method indicate that the CrBr3-based MTJ has a larger maximum tunneling magnetoresistance ratio than the CrI3-based MTJ. In a wide bias voltage range, the CrI3-based MTJ can maintain high spin filtering performance, while that of the CrBr3-based MTJ degrades sharply as the bias voltage increases. It is noted that negative differential resistance effect is observed in the CrBr3-based MTJ. The differences of spin transport properties between the CrI3-based MTJ and the CrBr3-based MTJ are clarified in terms of the inside device physics, including the spin-dependent projected density of states, band structures, Bloch states, and the electron density difference. This work provides some physical insights for the design of 2D van der Waals MTJ.

Spin filtering effects in monocristalline Fe/MgO/Fe magnetic tunnel junctions

2006 ◽  
Vol 126 (2-3) ◽  
pp. 112-119 ◽  
Author(s):  
C. Tiusan ◽  
J. Faure-Vincent ◽  
M. Sicot ◽  
M. Hehn ◽  
C. Bellouard ◽  
...  
Keyword(s):  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Spin Filtering

scholarly journals Ferroelectric Control of Interface Spin Filtering in Multiferroic Tunnel Junctions

2019 ◽  
Vol 122 (3) ◽  
Author(s):  
J. Tornos ◽  
F. Gallego ◽  
S. Valencia ◽  
Y. H. Liu ◽  
V. Rouco ◽  
...  
Keyword(s):  
Tunnel Junctions ◽  
Spin Filtering

Spin-Filtering Ferroelectric Tunnel Junctions as Multiferroic Synapses for Neuromorphic Computing

2020 ◽  
Vol 12 (50) ◽  
pp. 56300-56309
Author(s):  
Yihao Yang ◽  
Zhongnan Xi ◽  
Yuehang Dong ◽  
Chunyan Zheng ◽  
Haihua Hu ◽  
...  
Keyword(s):  
Tunnel Junctions ◽  
Neuromorphic Computing ◽  
Spin Filtering

Spin-filtering and tunneling magnetoresistance effects in 6,6,12-graphyne-based molecular magnetic tunnel junctions

2019 ◽  
Vol 21 (5) ◽  
pp. 2734-2742 ◽  
Author(s):  
Jin Li ◽  
Maoyun Di ◽  
Zhi Yang ◽  
Li-Chun Xu ◽  
Yongzhen Yang ◽  
...  
Keyword(s):  
Tunnel Junctions ◽  
Graphene Nanoribbons ◽  
Magnetic Tunnel Junctions ◽  
Tunneling Magnetoresistance ◽  
Spintronic Devices ◽  
Zigzag Graphene Nanoribbons ◽  
Spin Filtering

By designing two kinds of molecular magnetic tunnel junctions based on 6,6,12-graphyne and zigzag graphene nanoribbons, the spin-filtering and tunneling magnetoresistance effects of spintronic devices can be dramatically enhanced.

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