scholarly journals Accumulation of the photonic energy of the deep-red part of the terrestrial sun irradiation by rare-earth metal-free E-Z photoisomerization

Author(s):  
Aleksey Vasilev ◽  
Ralitza Dimitrova ◽  
Meglena Kandinska ◽  
Katharina Landfester ◽  
Stanislav Baluschev

Large scale solar energy storage in form of E-Z photoisomerisable organic materials requires avoiding of application of rare earths metals at any stage of the process used. Here we report...

1987 ◽  
Vol 103 ◽  
Author(s):  
R. F. C. Farrow ◽  
S. S. P. Parkin ◽  
M. Lang ◽  
K. P. Roche

ABSTRACTWe report two new epitaxial systems, prepared by MBE: basal plane epitaxy of the rare earth metal Dy onto LaF3 films and vice versa. SQUID magnetometry studies indicate that buried epitaxial Dy films, of ∼300Å thick, order ferromagnetically at similar temperatures to bulk Dy crystals.These epitaxial systems are one member of a new family of epitaxial systems of basal plane epitaxy of rare earth metals on rare earth fluorides and vice versa. Such systems may be used to probe the effects of strain and dimensionality on magnetic ordering in rare earth metal films and multilayers.


Machines ◽  
2014 ◽  
Vol 2 (2) ◽  
pp. 120-133 ◽  
Author(s):  
Petter Eklund ◽  
Stefan Sjökvist ◽  
Sandra Eriksson ◽  
Mats Leijon

2017 ◽  
Vol 168 ◽  
pp. 14-21 ◽  
Author(s):  
Monica Benitez-Guerrero ◽  
Beatriz Sarrion ◽  
Antonio Perejon ◽  
Pedro E. Sanchez-Jimenez ◽  
Luis A. Perez-Maqueda ◽  
...  

2019 ◽  
Vol 7 (5) ◽  
pp. 2200-2209 ◽  
Author(s):  
Ronglei Fan ◽  
Shaobo Cheng ◽  
Guanping Huang ◽  
Yongjie Wang ◽  
Yazhou Zhang ◽  
...  

Designing a highly efficient and stable photoelectrochemical (PEC) tandem cell for unassisted solar water splitting is considered a promising approach for large-scale solar energy storage.


2018 ◽  
Vol 6 (3) ◽  
pp. 614-621 ◽  
Author(s):  
Tuhina Mondal ◽  
Supriya Mondal ◽  
Saptasree Bose ◽  
Debabrata Sengupta ◽  
Uttam Kumar Ghorai ◽  
...  

Designing of a white light emitting diode based on rare earth metal free intrinsic Zn-MOF by fabricating a suitable device.


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