Intrinsic Auxeticity and Negative Piezoelectricity in Two-dimensional Group-IV dipnictide monolayers with In-plane Anisotropy

2021 ◽  
Author(s):  
Yue Zhao ◽  
Gaoyang Gou ◽  
Xiaoli Lu ◽  
Yue Hao
Keyword(s):  
Van Der Waals ◽  
Layered Materials ◽  
Group Iv ◽  
Orthorhombic Symmetry ◽  
Two Dimensional ◽  
Dimensional Group ◽  
Plane Anisotropy

Two-dimensional (2D) van der Waals (vdW) layered materials with orthorhombic symmetry and distinct planar crystallographic lattices up to monolayer limit, can potentially display the in-plane anisotropy and diversed functionalities arised...

Electronic, Elastic and Piezoelectric Properties of Two-Dimensional Group-IV Buckled Monolayers

2017 ◽  
Vol 34 (8) ◽  
pp. 087701 ◽  
Author(s):  
Jing Shi ◽  
Yong Gao ◽  
Xiao-Li Wang ◽  
Si-Ning Yun
Keyword(s):  
Piezoelectric Properties ◽  
Group Iv ◽  
Two Dimensional ◽  
Dimensional Group

scholarly journals Vacancies and oxidation of two-dimensional group-IV monochalcogenides

2016 ◽  
Vol 94 (5) ◽  
Author(s):  
Lídia C. Gomes ◽  
A. Carvalho ◽  
A. H. Castro Neto
Keyword(s):  
Group Iv ◽  
Two Dimensional ◽  
Dimensional Group

scholarly journals Niobium oxide dihalides NbOX2: a new family of two-dimensional van der Waals layered materials with intrinsic ferroelectricity and antiferroelectricity

2019 ◽  
Vol 4 (5) ◽  
pp. 1113-1123 ◽  
Author(s):  
Yinglu Jia ◽  
Min Zhao ◽  
Gaoyang Gou ◽  
Xiao Cheng Zeng ◽  
Ju Li
Keyword(s):  
First Principles ◽  
Niobium Oxide ◽  
Van Der Waals ◽  
Layered Materials ◽  
Two Dimensional ◽  
First Principles Calculations ◽  
New Family ◽  
Ferroelectricity And Antiferroelectricity

A new group of two-dimensional layered materials with intrinsic ferroelectricity and antiferroelectricity are identified through first-principles calculations.

An optical spectroscopic study on two-dimensional group-VI transition metal dichalcogenides

2015 ◽  
Vol 44 (9) ◽  
pp. 2629-2642 ◽  
Author(s):  
Hualing Zeng ◽  
Xiaodong Cui
Keyword(s):  
Transition Metal ◽  
Spectroscopic Study ◽  
Electronic Devices ◽  
Transition Metal Dichalcogenides ◽  
Layered Materials ◽  
Two Dimensional ◽  
Group Vi ◽  
Intensive Research ◽  
Dimensional Group ◽  
Metal Dichalcogenides

The ultimate goal of making atomically thin electronic devices stimulates intensive research on layered materials, in particular the group-VI transition metal dichalcogenides (TMDs).

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