Ambipolar Transport in Two-Dimensional Sn-Based Perovskite Field-Effect Transistors Using an Aliphatic Polymer-Assisted Method

2021 ◽  
Author(s):  
Fan Zhang ◽  
Quan Zhang ◽  
Xin Liu ◽  
Liang Qin ◽  
Yufeng Hu ◽  
...  
Keyword(s):  
Charge Transport ◽  
Field Effect ◽  
Carrier Mobility ◽  
Field Effect Transistors ◽  
Two Dimensional ◽  
Ambipolar Transport

Two-dimensional layered Sn-based perovskites with superior carrier mobility and excellent compatibility with the horizontal charge transport in field-effect transistors are promising channel materials. However, ambipolar characteristics cannot be achieved and...

Effect of Film Morphology on Charge Transport in C60-based Organic Field Effect Transistors

2010 ◽  
Vol 1270 ◽  
Author(s):  
Mujeeb Ullah ◽  
Andrey K. Kadashchuk ◽  
Philipp Stadler ◽  
Alexander Kharchenko ◽  
Almantas Pivrikas ◽  
...  
Keyword(s):  
Grain Size ◽  
Charge Carrier ◽  
Substrate Temperature ◽  
Charge Transport ◽  
Field Effect ◽  
Carrier Mobility ◽  
Field Effect Transistors ◽  
Charge Carrier Mobility ◽  
Film Morphology ◽  
Organic Field Effect Transistors

AbstractThe critical factor that limits the efficiencies of organic electronic devices is the low charge carrier mobility which is attributed to disorder in organic films. In this work we study the effects of active film morphology on the charge transport in Organic Field Effect Transistors (OFETs). We fabricated the OFETs using different substrate temperature to grow different morphologies of C60 films by Hot Wall Epitaxy. Atomic Force Microscopy images and XRD results showed increasing grain size with increasing substrate temperature. An increase in field effect mobility was observed for different OFETs with increasing grain size in C60 films. The temperature dependence of charge carrier mobility in these devices followed the empirical relation named as Meyer-Neldel Rule and showed different activation energies for films with different degree of disorder. A shift in characteristic Meyer-Neldel energy was observed with changing C60 morphology which can be considered as an energetic disorder parameter.

scholarly journals Ambipolar transport compact models for two-dimensional materials based field-effect transistors

2021 ◽  
Vol 26 (5) ◽  
pp. 574-591
Author(s):  
Zhaoyi Yan ◽  
Guangyang Gou ◽  
Jie Ren ◽  
Fan Wu ◽  
Yang Shen ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Two Dimensional ◽  
Two Dimensional Materials ◽  
Compact Models ◽  
Ambipolar Transport

B2N Monolayer: a Direct Band-Gap Semiconductor with High and Highly Anisotropic Carrier Mobility

Nanoscale ◽  
2021 ◽  
Author(s):  
Shuyi Lin ◽  
Yu Guo ◽  
Meiling Xu ◽  
Jijun Zhao ◽  
Yiwei Liang ◽  
...  
Keyword(s):  
Band Gap ◽  
Field Effect ◽  
Carrier Mobility ◽  
Field Effect Transistors ◽  
Two Dimensional ◽  
Planar Lattice ◽  
Direct Band Gap ◽  
Two Dimensional Materials ◽  
Direct Band

Two-dimensional materials with a planar lattice, a suitable direct band-gap, high and highly anisotropic carrier mobility are desirable for the development of advanced field-effect transistors. Here we predict three thermodynamically...

Tuning the ambipolar charge transport properties of N-heteropentacenes by their frontier molecular orbital energy levels

2015 ◽  
Vol 3 (16) ◽  
pp. 4188-4196 ◽  
Author(s):  
Ke Liu ◽  
Cheng-Li Song ◽  
Ye-Cheng Zhou ◽  
Xing-Yu Zhou ◽  
Xiao-Jun Pan ◽  
...  
Keyword(s):  
Charge Transport ◽  
Transport Properties ◽  
Molecular Orbital ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Energy Levels ◽  
Fine Tuning ◽  
Frontier Molecular Orbital ◽  
Orbital Energy ◽  
Ambipolar Transport

Tuning the ambipolar performance: carefully designed N-heteropentacenes realized fine tuning of their HOMOs and LUMOs, which dramatically affected their ambipolar transport performance in field-effect transistors.

scholarly journals Two-dimensional charge transport in molecularly ordered polymer field-effect transistors

2016 ◽  
Vol 4 (47) ◽  
pp. 11135-11142 ◽  
Author(s):  
V. D'Innocenzo ◽  
A. Luzio ◽  
H. Abdalla ◽  
S. Fabiano ◽  
M. A. Loi ◽  
...  
Keyword(s):  
Charge Transport ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Two Dimensional

Neat evidence of two-dimensional transport is observed in field-effect transistors based on nanometer-thick, Langmuir–Schäfer deposited mono- and multi-layers of an electron transporting polymer.

Molecular Reorganization in Organic Field-Effect Transistors and Its Effect on Two-Dimensional Charge Transport Pathways

ACS Nano ◽  
2013 ◽  
Vol 7 (2) ◽  
pp. 1257-1264 ◽  
Author(s):  
Fabiola Liscio ◽  
Cristiano Albonetti ◽  
Katharina Broch ◽  
Arian Shehu ◽  
Santiago David Quiroga ◽  
...  
Keyword(s):  
Charge Transport ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Two Dimensional ◽  
Organic Field Effect Transistors ◽  
Transport Pathways

scholarly journals Polarization-sensitive photodetectors based on three-dimensional molybdenum disulfide (MoS2) field-effect transistors

Nanophotonics ◽  
2020 ◽  
Vol 9 (16) ◽  
pp. 4719-4728
Author(s):  
Tao Deng ◽  
Shasha Li ◽  
Yuning Li ◽  
Yang Zhang ◽  
Jingye Sun ◽  
...  
Keyword(s):  
Molybdenum Disulfide ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Three Dimensional ◽  
Polarized Light ◽  
Optical Field ◽  
Two Dimensional ◽  
Polarization Ratio ◽  
Two Dimensional Materials

AbstractThe molybdenum disulfide (MoS2)-based photodetectors are facing two challenges: the insensitivity to polarized light and the low photoresponsivity. Herein, three-dimensional (3D) field-effect transistors (FETs) based on monolayer MoS2 were fabricated by applying a self–rolled-up technique. The unique microtubular structure makes 3D MoS2 FETs become polarization sensitive. Moreover, the microtubular structure not only offers a natural resonant microcavity to enhance the optical field inside but also increases the light-MoS2 interaction area, resulting in a higher photoresponsivity. Photoresponsivities as high as 23.8 and 2.9 A/W at 395 and 660 nm, respectively, and a comparable polarization ratio of 1.64 were obtained. The fabrication technique of the 3D MoS2 FET could be transferred to other two-dimensional materials, which is very promising for high-performance polarization-sensitive optical and optoelectronic applications.

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