scholarly journals Two-dimensional charge transport in molecularly ordered polymer field-effect transistors

2016 ◽  
Vol 4 (47) ◽  
pp. 11135-11142 ◽  
Author(s):  
V. D'Innocenzo ◽  
A. Luzio ◽  
H. Abdalla ◽  
S. Fabiano ◽  
M. A. Loi ◽  
...  

Neat evidence of two-dimensional transport is observed in field-effect transistors based on nanometer-thick, Langmuir–Schäfer deposited mono- and multi-layers of an electron transporting polymer.

Author(s):  
Fan Zhang ◽  
Quan Zhang ◽  
Xin Liu ◽  
Liang Qin ◽  
Yufeng Hu ◽  
...  

Two-dimensional layered Sn-based perovskites with superior carrier mobility and excellent compatibility with the horizontal charge transport in field-effect transistors are promising channel materials. However, ambipolar characteristics cannot be achieved and...


ACS Nano ◽  
2013 ◽  
Vol 7 (2) ◽  
pp. 1257-1264 ◽  
Author(s):  
Fabiola Liscio ◽  
Cristiano Albonetti ◽  
Katharina Broch ◽  
Arian Shehu ◽  
Santiago David Quiroga ◽  
...  

Nanophotonics ◽  
2020 ◽  
Vol 9 (16) ◽  
pp. 4719-4728
Author(s):  
Tao Deng ◽  
Shasha Li ◽  
Yuning Li ◽  
Yang Zhang ◽  
Jingye Sun ◽  
...  

AbstractThe molybdenum disulfide (MoS2)-based photodetectors are facing two challenges: the insensitivity to polarized light and the low photoresponsivity. Herein, three-dimensional (3D) field-effect transistors (FETs) based on monolayer MoS2 were fabricated by applying a self–rolled-up technique. The unique microtubular structure makes 3D MoS2 FETs become polarization sensitive. Moreover, the microtubular structure not only offers a natural resonant microcavity to enhance the optical field inside but also increases the light-MoS2 interaction area, resulting in a higher photoresponsivity. Photoresponsivities as high as 23.8 and 2.9 A/W at 395 and 660 nm, respectively, and a comparable polarization ratio of 1.64 were obtained. The fabrication technique of the 3D MoS2 FET could be transferred to other two-dimensional materials, which is very promising for high-performance polarization-sensitive optical and optoelectronic applications.


2021 ◽  
Author(s):  
Guo-Dong Wu ◽  
Hai-Lun Zhou ◽  
Zhi-Hua Fu ◽  
Wen-Hua Li ◽  
Jing-Wei Xiu ◽  
...  

2021 ◽  
pp. 2103982
Author(s):  
Jian‐Min Yan ◽  
Jing‐Shi Ying ◽  
Ming‐Yuan Yan ◽  
Zhao‐Cai Wang ◽  
Shuang‐Shuang Li ◽  
...  

2021 ◽  
Vol 13 (7) ◽  
pp. 8631-8642
Author(s):  
Tomoya Taguchi ◽  
Fabio Chiarella ◽  
Mario Barra ◽  
Federico Chianese ◽  
Yoshihiro Kubozono ◽  
...  

2019 ◽  
Vol 3 (11) ◽  
Author(s):  
Ryan J. Wu ◽  
Sagar Udyavara ◽  
Rui Ma ◽  
Yan Wang ◽  
Manish Chhowalla ◽  
...  

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