Air-Stable MXene/GaAs Heterojunction Solar Cells with a High Initial Efficiency of 9.69%

2021 ◽  
Author(s):  
Zhijie Zhang ◽  
Jing Lin ◽  
Peiye Sun ◽  
Qinghao Zeng ◽  
Xi Deng ◽  
...  
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
High Efficiency ◽  
Low Cost ◽  
Heterojunction Solar Cell ◽  
Two Dimensional ◽  
2D Material ◽  
Heterojunction Solar Cells ◽  
Photovoltaic Applications ◽  
Excellent Stability

Two-dimensional (2D) material-based heterojunction solar cells have attracted significant interests due to their potential in low-cost photovoltaic applications. Herein, a novel MXene/GaAs heterojunction solar cell with high-efficiency and excellent stability...

scholarly journals Complex Investigation of High Efficiency and Reliable Heterojunction Solar Cell Based on an Improved Cu2O Absorber Layer

Energies ◽  
2020 ◽  
Vol 13 (18) ◽  
pp. 4667
Author(s):  
Laurentiu Fara ◽  
Irinela Chilibon ◽  
Ørnulf Nordseth ◽  
Dan Craciunescu ◽  
Dan Savastru ◽  
...  
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Reliability Analysis ◽  
High Performance ◽  
High Efficiency ◽  
Absorber Layer ◽  
Heterojunction Solar Cell ◽  
Complex Investigation ◽  
Heterojunction Solar Cells ◽  
Conduction Band Offset

This study is aimed at increasing the performance and reliability of silicon-based heterojunction solar cells with advanced methods. This is achieved by a numerical electro-optical modeling and reliability analysis for such solar cells correlated with experimental analysis of the Cu2O absorber layer. It yields the optimization of a silicon tandem heterojunction solar cell based on a ZnO/Cu2O subcell and a c-Si bottom subcell using electro-optical numerical modeling. The buffer layer affinity and mobility together with a low conduction band offset for the heterojunction are discussed, as well as spectral properties of the device model. Experimental research of N-doped Cu2O thin films was dedicated to two main activities: (1) fabrication of specific samples by DC magnetron sputtering and (2) detailed characterization of the analyzed samples. This last investigation was based on advanced techniques: morphological (scanning electron microscopy—SEM and atomic force microscopy—AFM), structural (X-ray diffraction—XRD), and optical (spectroscopic ellipsometry—SE and Fourier-transform infrared spectroscopy—FTIR). This approach qualified the heterojunction solar cell based on cuprous oxide with nitrogen as an attractive candidate for high-performance solar devices. A reliability analysis based on Weibull statistical distribution establishes the degradation degree and failure rate of the studied solar cells under stress and under standard conditions.

Novel high-efficiency crystalline-silicon-based compound heterojunction solar cells: HCT (heterojunction with compound thin-layer)

2014 ◽  
Vol 16 (29) ◽  
pp. 15400-15410 ◽  
Author(s):  
Yiming Liu ◽  
Yun Sun ◽  
Wei Liu ◽  
Jianghong Yao
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Thin Layer ◽  
High Efficiency ◽  
Crystalline Silicon ◽  
Heterojunction Solar Cell ◽  
Heterojunction Solar Cells ◽  
Silicon Based

A novel high-efficiency c-Si heterojunction solar cell with using compound hetero-materials is proposed and denominated HCT (heterojunction with a compound thin-layer).

scholarly journals Numerical simulation for optimization of ultra-thin n-type AZO and TiO2 based textured p-type c-Si Heterojunction Solar Cells

2021 ◽  
Author(s):  
Chandan Yadav ◽  
sushil kumar
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Crystalline Silicon ◽  
Low Cost ◽  
Simulation Software ◽  
Heterojunction Solar Cell ◽  
Maximum Efficiency ◽  
Heterojunction Solar Cells ◽  
Type Layer ◽  
P Type

Abstract A maximum efficiency of 17% for ultra-thin n-type AZO layer and 17.5% for ultra-thin n-type TiO2 layer based silicon heterojunction solar cell is reported by optimizing its properties which is much higher than practically obtained efficiency signifying a lot of improvements can be performed to improve efficiency of TiO2/Si and AZO/Si heterojunction solar cell. AZO layer and TiO2 layer is used as n-type emitter layer and crystalline silicon wafer is used as p-type (p-cSi) layer for modelling AZO/Si and TiO2/Si heterojunctions solar cell respectively using AFORS HET automat simulation software. Various parameters like thickness of AZO, TiO2 layer, p-cSi layer, doping concentration of donors (Nd) and effective conduction band density (Nc) are optimized. Finally, texturing at different angle is studied and maximum efficiency is reported at 70 µm thick p-type crystalline Silicon (p-cSi) wafer, that can be very helpful for manufacturing low cost HJ solar cells at industrial scale because of thin wafer and removal of additional processing setup required for deposition of amorphous silicon i-layer. Utilization of TiO2 and Aluminium doped Zinc Oxide as n-type layer and p-cSi as p-type layer can help in producing low cost and efficient heterojunction (HJ) than compared to HJ with intrinsic thin layer HIT solar cells.

scholarly journals Ruthenium Sensitizers and Their Applications in Dye-Sensitized Solar Cells

2012 ◽  
Vol 2012 ◽  
pp. 1-21 ◽  
Author(s):  
Yuancheng Qin ◽  
Qiang Peng
Keyword(s):  
Solar Cells ◽  
High Efficiency ◽  
Low Cost ◽  
Dye Sensitized Solar Cells ◽  
Ruthenium Complexes ◽  
Practical Applications ◽  
Photovoltaic Energy ◽  
Dye Sensitized ◽  
Sensitized Solar Cells ◽  
Excellent Stability

Dye-sensitized solar cells (DSSCs) have attracted considerable attention in recent years due to the possibility of low-cost conversion of photovoltaic energy. The DSSCs-based ruthenium complexes as sensitizers show high efficiency and excellent stability, implying potential practical applications. This review focuses on recent advances in design and preparation of efficient ruthenium sensitizers and their applications in DSSCs, including thiocyanate ruthenium sensitizers and thiocyanate-free ruthenium sensitizers.

Enhancement of photovoltaic properties of CH3NH3PbBr3 heterojunction solar cells by modifying mesoporous TiO2 surfaces with carboxyl groups

2015 ◽  
Vol 3 (17) ◽  
pp. 9264-9270 ◽  
Author(s):  
Hyun Bin Kim ◽  
Iseul Im ◽  
Yeomin Yoon ◽  
Sang Do Sung ◽  
Eunji Kim ◽  
...  
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Mesoporous Tio2 ◽  
Heterojunction Solar Cell ◽  
Carboxyl Groups ◽  
Photovoltaic Properties ◽  
Heterojunction Solar Cells ◽  
Light Absorber

In a novel heterojunction solar cell employing CH3NH3PbBr3 (MAPbBr3) as the light absorber, the introduction of a carboxylate monolayer on the mesoporous TiO2 surfaces significantly enhances JSC as well as VOC.

scholarly journals III–V Multijunction Solar Cell Integration with Silicon: Present Status, Challenges and Future Outlook

2014 ◽  
Vol 1 (3-4) ◽  
Author(s):  
Nikhil Jain ◽  
Mantu K. Hudait
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
High Efficiency ◽  
Low Cost ◽  
Si Substrate ◽  
Future Outlook ◽  
Si Solar Cells ◽  
Multijunction Solar Cells ◽  
The Future ◽  
Multijunction Solar Cell

AbstractAchieving high-efficiency solar cells and at the same time driving down the cell cost has been among the key objectives for photovoltaic researchers to attain a lower levelized cost of energy (LCOE). While the performance of silicon (Si) based solar cells have almost saturated at an efficiency of ~25%, III–V compound semiconductor based solar cells have steadily shown performance improvement at ~1% (absolute) increase per year, with a recent record efficiency of 44.7%. Integration of such high-efficiency III–V multijunction solar cells on significantly cheaper and large area Si substrate has recently attracted immense interest to address the future LCOE roadmaps by unifying the high-efficiency merits of III–V materials with low-cost and abundance of Si. This review article will discuss the current progress in the development of III–V multijunction solar cell integration onto Si substrate. The current state-of-the-art for III–V-on-Si solar cells along with their theoretical performance projections is presented. Next, the key design criteria and the technical challenges associated with the integration of III–V multijunction solar cells on Si are reviewed. Different technological routes for integrating III–V solar cells on Si substrate through heteroepitaxial integration and via mechanical stacking approach are presented. The key merits and technical challenges for all of the till-date available technologies are summarized. Finally, the prospects, opportunities and future outlook toward further advancing the performance of III–V-on-Si multijunction solar cells are discussed. With the plummeting price of Si solar cells accompanied with the tremendous headroom available for improving the III–V solar cell efficiencies, the future prospects for successful integration of III–V solar cell technology onto Si substrate look very promising to unlock an era of next generation of high-efficiency and low-cost photovoltaics.

Study on hole-transport-material-free planar TiO2/CH3NH3PbI3 heterojunction solar cells: the simplest configuration of a working perovskite solar cell

2015 ◽  
Vol 3 (28) ◽  
pp. 14902-14909 ◽  
Author(s):  
Ying Liu ◽  
Shulin Ji ◽  
Shuxin Li ◽  
Weiwei He ◽  
Ke Wang ◽  
...  
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Production Cost ◽  
High Efficiency ◽  
Perovskite Solar Cells ◽  
Perovskite Solar Cell ◽  
Hole Transport ◽  
Heterojunction Solar Cells

Perovskite solar cells have been widely investigated owing to their high efficiency and low production cost.

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