scholarly journals Fe Containing Templates Derived Atomic Fe-N-C to Boost Fenton-Like Reaction and the Charge Migration Analysis on Highly Active Fe-N4 Sites

2021 ◽  
Author(s):  
Yuan Gao ◽  
Xiaoguang Duan ◽  
Bin Li ◽  
Qianqian Jia ◽  
Yang Li ◽  
...  
Keyword(s):  
Water Pollution ◽  
Vapor Deposition ◽  
Advanced Oxidation Processes ◽  
Three Dimensional ◽  
Chemical Vapor ◽  
Charge Migration ◽  
Carbon Nanosheets ◽  
Oxidation Processes ◽  
Highly Active ◽  
Migration Analysis

Persulfate-based advanced oxidation processes are promising technologies to solve water pollution. In this work, single iron atoms are anchored in three-dimensional N-doped carbon nanosheets by a chemical vapor deposition (CVD)...

Boosting Peroxymonosulfate Activation via Highly Active and Durable Cobalt Catalysts

2020 ◽  
Author(s):  
Minglei Wang ◽  
Qianhong Gao ◽  
Mingxing Zhang ◽  
Yulong He ◽  
Yumei Zhang ◽  
...  
Keyword(s):  
Water Pollution ◽  
Advanced Oxidation Processes ◽  
Advanced Oxidation ◽  
Cobalt Catalysts ◽  
Oxidation Processes ◽  
Highly Active ◽  
Large Size

Advanced oxidation processes (AOPs) present one of the most promising strategies to deal with the ever-growing water pollution. However, fabricating improved catalysts with large size (meter level or larger), long-term...

scholarly journals Chemical Vapor Deposition of Photocatalyst Nanoparticles on PVDF Membranes for Advanced Oxidation Processes

Membranes ◽  
2018 ◽  
Vol 8 (3) ◽  
pp. 35 ◽  
Author(s):  
Giovanni De Filpo ◽  
Elvira Pantuso ◽  
Katia Armentano ◽  
Patrizia Formoso ◽  
Gianluca Di Profio ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Advanced Oxidation Processes ◽  
Chemical Vapor ◽  
Advanced Oxidation ◽  
Oxidation Processes

Synthesis of carbon nanosheets by inductively coupled radio-frequency plasma enhanced chemical vapor deposition

Carbon ◽  
2004 ◽  
Vol 42 (14) ◽  
pp. 2867-2872 ◽  
Author(s):  
Jianjun Wang ◽  
Mingyao Zhu ◽  
Ron A. Outlaw ◽  
Xin Zhao ◽  
Dennis M. Manos ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Radio Frequency ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Radio Frequency Plasma ◽  
Carbon Nanosheets ◽  
Inductively Coupled ◽  
Frequency Plasma

A Three-Dimensional Analysis of Particle Deposition for the Modified Chemical Vapor Deposition (MCVD) Process

1992 ◽  
Vol 114 (3) ◽  
pp. 735-742 ◽  
Author(s):  
Y. T. Lin ◽  
M. Choi ◽  
R. Greif
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Particle Deposition ◽  
Three Dimensional ◽  
Chemical Vapor ◽  
Secondary Flows ◽  
Circumferential Direction ◽  
Forced Flow ◽  
Flow Rates ◽  
Entry Length

A study has been made of the deposition of particles that occurs during the modified chemical vapor deposition (MCVD) process. The three-dimensional conservation equations of mass, momentum, and energy have been solved numerically for forced flow, including the effects of buoyancy and variable properties in a heated, rotating tube. The motion of the particles that are formed is determined from the combined effects resulting from thermophoresis and the forced and secondary flows. The effects of torch speed, rotational speed, inlet flow rate, tube radius, and maximum surface temperature on deposition are studied. In a horizontal tube, buoyancy results in circumferentially nonuniform temperature and velocity fields and particle deposition. The effect of tube rotation greatly reduces the nonuniformity of particle deposition in the circumferential direction. The process is chemical-reaction limited at larger flow rates and particle-transport limited at smaller flow rates. The vertical tube geometry has also been studied because its symmetric configuration results in uniform particle deposition in the circumferential direction. The “upward” flow condition results in a large overall deposition efficiency, but this is also accompanied by a large “tapered entry length.”

Heteroepitaxial Nucleation and Growth of Ge ON Si(100) Surfaces Using Remote Plasma Enhanced Chemical Vapor Deposition

1988 ◽  
Vol 116 ◽  
Author(s):  
R.A. Rudder ◽  
S.V. Hattangady ◽  
D.J. Vitkavage ◽  
R.J. Markunas
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Photoelectron Spectroscopy ◽  
Three Dimensional ◽  
Chemical Vapor ◽  
Layer By Layer ◽  
Heteroepitaxial Growth ◽  
Remote Plasma ◽  
Dimensional Growth ◽  
Diffraction Patterns

Heteroepitaxial growth of Ge on Si(100) has been accomplished using remote plasma enhanced chemical vapor deposition at 300*#x00B0;C. Reconstructed surfaces with diffraction patterns showing non-uniform intensity variations along the lengths of the integral order streaks are observed during the first 100 Å of deposit. This observation of an atomically rough surface during the initial stages of growth is an indication of three-dimensional growth. As the epitaxial growth proceeds, the diffraction patterns become uniform with extensive streaking on both the integral and fractional order streaks. Subsequent growth, therefore, takes place in a layer-by-layer, two-dimensional mode. X-ray photoelectron spectroscopy of the early nucleation stages, less than 80 Å, show that there is uniform coverage with no evidence of island formation.

Highly graphitic carbon nanosheets synthesized over tailored mesoporous molecular sieves using acetylene by chemical vapor deposition method

RSC Advances ◽  
2015 ◽  
Vol 5 (113) ◽  
pp. 93364-93373 ◽  
Author(s):  
Raji Atchudan ◽  
Suguna Perumal ◽  
Thomas Nesakumar Jebakumar Immanuel Edison ◽  
Yong Rok Lee
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Atmospheric Pressure ◽  
Molecular Sieves ◽  
Chemical Vapor ◽  
Graphitic Carbon ◽  
Mesoporous Molecular Sieves ◽  
Chemical Vapor Deposition Method ◽  
Deposition Method ◽  
Carbon Nanosheets

Graphitic carbon nanosheets (GCNS) were synthesized using mesoporous Ti-MCM-41 molecular sieves as catalytic template and acetylene as carbon precursor following chemical vapor deposition method, under atmospheric pressure.

Analysis of Buoyancy and Tube Rotation Relative to the Modified Chemical Vapor Deposition Process

1990 ◽  
Vol 112 (4) ◽  
pp. 1063-1069 ◽  
Author(s):  
M. Choi ◽  
Y. T. Lin ◽  
R. Greif
Keyword(s):  
Secondary Flow ◽  
Vapor Deposition ◽  
Particle Deposition ◽  
Three Dimensional ◽  
Chemical Vapor ◽  
Horizontal Tube ◽  
Deposition Process ◽  
Secondary Flows ◽  
Secondary Motion

The secondary flows resulting from buoyancy effects in respect to the MCVD process have been studied in a rotating horizontal tube using a perturbation analysis. The three-dimensional secondary flow fields have been determined at several axial locations in a tube whose temperature varies in both the axial and circumferential directions for different rotational speeds. For small rotational speeds, buoyancy and axial convection are dominant and the secondary flow patterns are different in the regions near and far from the torch. For moderate rotational speeds, the effects of buoyancy, axial and angular convection are all important in the region far from the torch where there is a spiraling secondary flow. For large rotational speeds, only buoyancy and angular convection effects are important and no spiraling secondary motion occurs far downstream. Compared with thermophoresis, the important role of buoyancy in determining particle trajectories in MCVD is presented. As the rotational speed increases, the importance of the secondary flow decreases and the thermophoretic contribution becomes more important. It is noted that thermophoresis is considered to be the main cause of particle deposition in the MCVD process.

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