scholarly journals Highly enhanced electrical properties of lanthanum-silicate-oxide-based SOFC electrolytes with co-doped tin and bismuth in La9.33−xBixSi6−ySnyO26

RSC Advances ◽  
2021 ◽  
Vol 11 (61) ◽  
pp. 38589-38595
Author(s):  
Atiek Rostika Noviyanti ◽  
Juliandri ◽  
Suci Winarsih ◽  
Dani Gustaman Syarif ◽  
Yoga Trianzar Malik ◽  
...  
Keyword(s):  
Activation Energy ◽  
Electrical Properties ◽  
Structure Modification ◽  
Bi Doping ◽  
Doping Mechanism ◽  
Lanthanum Silicate ◽  
Co Doped ◽  
Sofc Electrolytes

Structure modification of La9.33Si6O26 (LSO) as SOFC electrolyte via a bi-doping mechanism provides enhanced electrical properties of La7.83Bi1.5Si5.7Sn0.3O26 at 873 K (1.84 × 10−2 S cm−1) with low activation energy of 0.80 eV compared to pristine LSO (0.08 × 10−2 S cm−1).

Structural, Thermal and Electrical Properties of Doped Poly(3,4 ethylenedioxythiophene)

2016 ◽  
Vol 10 (4) ◽  
pp. 395-400 ◽  
Author(s):  
Deepali Kelkar ◽  
◽  
Ashish Chourasia ◽  
◽  
Keyword(s):  
Crystal Structure ◽  
Electrical Properties ◽  
Xrd Analysis ◽  
Structure Modification ◽  
Camphorsulfonic Acid ◽  
Thermal And Electrical Properties ◽  
Ft Ir

Poly(3,4-ethylenedioxythiophene) (PEDOT) was chemically synthesized, undoped and then re-doped using FeCl3 as well as camphorsulfonic acid (CSA). FT-IR results confirm the nature of the synthesized and doped samples. XRD analysis indicates crystal structure modification after doping and was also used to calculate crystallinity of samples. Crystallinity increases after FeCl3 doping, whereas it reduces due to CSA doping. TGA-DTA results show reduction in Tg value for FeCl3 doped sample while it increases for CSA doped samples compared to that of undoped PEDOT. Reduction in Tg indicates plasticizing effect of FeCl3 whereas increase in Tg show anti-plasticizing effect of CSA in PEDOT. Conductivity value () increases by two orders of magnitude after doping. Log vs. 1/T graph show metallic nature of undoped PEDOT above 308 K, however both doped samples show semiconducting nature from 301 to 383 K.

Preparation, characterization and thermo electrical properties of co-doped Ce0.8−xSm0.2CaxO2−δ materials

2010 ◽  
Vol 181 (1-2) ◽  
pp. 86-91 ◽  
Author(s):  
S. Ramesh ◽  
V. Prashanth Kumar ◽  
P. Kistaiah ◽  
C. Vishnuvardhan Reddy
Keyword(s):  
Electrical Properties ◽  
Co Doped

Crystallization of Zn-rich and P-rich amorphous Zn3P2 thin films

1988 ◽  
Vol 66 (5) ◽  
pp. 373-375 ◽  
Author(s):  
C. J. Arsenault ◽  
D. E. Brodie
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Activation Energy ◽  
Electrical Properties ◽  
Structural Properties ◽  
Crystallization Process ◽  
X Ray Diffraction ◽  
Electrical Measurements ◽  
Conductivity Activation Energy ◽  
X Ray

Zn-rich and P-rich amorphous Zn3P2 thin films were prepared by co-evaporation of the excess element during the normal Zn3P2 deposition. X-ray diffraction techniques were used to investigate the structural properties and the crystallization process. Agglomeration of the excess element within the as-made amorphous Zn3P2 thin film accounted for the structural properties observed after annealing the sample. Electrical measurements showed that excess Zn reduces the conductivity activation energy and increases the conductivity, while excess P up to 15 at.% does not alter the electrical properties significantly.

Magnetic properties of undoped and Co-doped n-type β–FeSi2.5 single crystals

2002 ◽  
Vol 17 (11) ◽  
pp. 2960-2965 ◽  
Author(s):  
E. Arushanov ◽  
L. Ivanenko ◽  
D. Eckert ◽  
G. Behr ◽  
U. K. Rößler ◽  
...  
Keyword(s):  
Activation Energy ◽  
Magnetic Properties ◽  
Magnetic Susceptibility ◽  
External Field ◽  
Single Crystals ◽  
Spin Glasses ◽  
Paramagnetic Centers ◽  
Temperature Dependent ◽  
Paramagnetic Curie Temperature ◽  
Co Doped

Results of magnetization and magnetic susceptibility measurements on undoped and Co-doped FeSi2.5 single crystals are presented. The temperature dependence of the magnetic susceptibility of the Co-doped sample in the range of 5–300 K can be explained by temperature-dependent contributions due to paramagnetic centers and the carriers excited thermally in the extrinsic conductivity region. The values of the paramagnetic Curie temperature and activation energy of the donor levels were estimated. It is also shown that the magnetic susceptibility of Co-doped samples cooled in zero external field and in a field are different. This resembles the properties of spin-glasses and indicates the presence of coupling between magnetic centers.

Cu/W Co-doped CaBi2Nb2O9 Piezoelectric Ceramics on Structural and Electrical Properties

2021 ◽  
pp. 163078
Author(s):  
Hepeng Wang ◽  
Chao Chen ◽  
Xiangping Jiang ◽  
Xiaokun Huang ◽  
Xin Nie ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Piezoelectric Ceramics ◽  
Structural And Electrical Properties ◽  
Co Doped

Temperature/Doping-Dependency of the Electrical Properties of the Nickel Doped Copper Oxide Thin Films

2021 ◽  
Vol 16 (2) ◽  
pp. 163-169
Author(s):  
Alaa Y. Mahmoud ◽  
Wafa A. Alghameeti ◽  
Fatmah S. Bahabri
Keyword(s):  
Thin Films ◽  
Activation Energy ◽  
Electrical Properties ◽  
Thermal Activation ◽  
Doping Concentration ◽  
Energy Gap ◽  
Cupric Oxide ◽  
Electrical Energy ◽  
Thermal Activation Energy ◽  
Ni Doping

The electrical properties of the Nickel doped cupric oxide Ni-CuO thin films with various doping concentrations of Ni (0, 20, 30, 70, and 80%) are investigated at two different annealing temperatures; 200 and 400 °C. The electrical properties of the films; namely thermal activation energy and electrical energy gap are calculated and compared. We find that for the non-annealed Ni-CuO films, both thermal activation energy and electrical energy gap are decreased by increasing the doping concentration, while for the annealed films, the increase in the Ni doping results in the increase in thermal activation energy and electrical energy gap for most of the Ni-CuO films. We also observe that for a particular concentration, the annealing at 200 °C produces lower thermal activation energy and electrical energy gap than the annealing at 400 °C. We obtained two values of the activation energy varying from -5.52 to -0.51 eV and from 0.49 to 3.36 eV, respectively, for the annealing at 200 and 400 °C. We also obtained two values of the electrical bandgap varying from -11.05 to -1.03 eV and from 0.97 to 6.71 eV, respectively, for the annealing at 200 and 400 °C. It is also noticeable that the increase in the doping concentration reduces the activation energy, and hence the electrical bandgap energies.

scholarly journals Synthesis and Characterisation of Structural and Electrical Properties of CuMn2O4 Spinel Compound

2021 ◽  
pp. 1-4
Author(s):  
Rasha Yousef ◽  
Alaa Nassif ◽  
Abla Al-Zoubi ◽  
Nasser Al-Din
Keyword(s):  
Activation Energy ◽  
Solid State ◽  
Electrical Properties ◽  
Optimum Temperature ◽  
Prepared Compound ◽  
Solid State Method ◽  
Structural And Electrical Properties ◽  
Cubic Structure ◽  
Experimental Density ◽  
Scherrer Method

CuMn2O4 was synthesized by the solid-state method. MnO2 and CuO were used as precursors. The optimum temperature of synthesis was 850°C. XRD results showed that the prepared compound had a cubic structure with Fd3 ̅m space group. The lattice constant and unit cell volume were a=8.359Å and V=584.14A°3 respectively. The grain size was calculated by the Debye-Scherrer method and was 33.49 nm for CuMn2O4 annealed at 850°C. The experimental density was calculated and compared to the theoretical density. The results were ρt= 5.399 gr/cm3 and ρE = 5.24 gr/cm3. The electrical properties of the compound showed that it behaves like a semiconductor, and the activation energy of the compound was 0.1535 eV. KEYWORDS Activation energy, copper manganite (CuMO), mixed oxide, solid-state reaction, spinel

scholarly journals Electrical properties of pure NiO and NiO:Au thin films prepared by using pulsed laser deposition

2019 ◽  
Vol 14 (29) ◽  
pp. 37-43 ◽  
Author(s):  
Raied K. Jamal
Keyword(s):  
Thin Films ◽  
Activation Energy ◽  
Electrical Properties ◽  
Transport Mechanism ◽  
Room Temperature ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Concentration Increase ◽  
Annealing Temperatures ◽  
P Type

The electrical properties of pure NiO and NiO:Au Films which aredeposited on glass substrate with various dopant concentrations(1wt.%, 2wt%, 3wt.% and 4wt.%) at room temperature 450 Coannealing temperature will be presented. The results of the hall effectshowed that all the films were p-type. The Hall mobility decreaseswhile both carrier concentration and conductivity increases with theincreasing of annealing temperatures and doping percentage, Thus,indicating the behavior of semiconductor, and also the D.Cconductivity from which the activation energy decrease with thedoping concentration increase and transport mechanism of the chargecarriers can be estimated.

Effect of Ce-Mn Codoping on the Structural, Morphological and Electrical Properties of the BaTiO3 Based Ceramics

2021 ◽  
Vol 11 (4) ◽  
pp. 12215-12226
Keyword(s):  
Dielectric Constant ◽  
Electrical Properties ◽  
Doping Concentration ◽  
Xrd Analysis ◽  
Solid State Reaction Method ◽  
Lattice Parameter ◽  
Stoichiometric Ratio ◽  
Co Doping ◽  
Mn Doped ◽  
Co Doped

Undoped, Cerium (Ce) doped, Manganese (Mn) doped and Ce-Mn co-doped Barium Titanate (BaTiO3) with the general formula Ba1-xCexMnyTi1-yO3 (where x = 0.00, 0.01, 0.02, 0.03, y = 0.00; x = 0.00, y =0.01, 0.02, 0.03; and x = y = 0.01, 0.02,0.03) were synthesized by solid-state reaction method and sintered at 1200 C for 4 hr with an aim to study their structural and electrical properties. The grain size of the samples has been estimated using the Scanning Electron Microscopy (SEM). The X-ray Diffraction (XRD) analysis indicates that the structure of the Ce-doped and Ce-Mn co-doped BaTiO3 is cubic. However, the undoped BaTiO3 and Mn-doped BaTiO3 confirmed the tetragonal-cubic mixed phases. With the change of doping concentrations, the positions of different peaks shifted slightly. The lattice parameter varied irregularly with increasing doping concentration because of Mn's changeable valency. EDX spectra confirmed the presence of Ba, Ti, Ce, and Mn contents in the co-doped samples with stoichiometric ratio. Crystallinity is observed to be clearly increased when Ce-Mn is co-doped in BaTiO3. J-V characteristic curves indicate transition from conducting to semiconducting nature for the doped and co-doped samples with the increase in temperature. The dielectric constant of the samples increases up to 4500 with the doping concentration. The higher values of dielectric constant are observed for the 2% Mn-doped and 1% Ce-Mn co-doped samples compared to the other undoped samples. For the undoped and Mn-doped samples, constant dielectric values increase with temperature but decrease for the Ce-doped and Ce-Mn co-doped samples. It is inferred that co-doping of BaTiO3 with Ce and Mn would be beneficial and economical for its applications.

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