High performance GZO/p-Si heterojunction diodes fabricated by reactive co-sputtering of Zn and GaAs through the control of GZO layer thickness
The effect of thickness of Ga doped ZnO (GZO) layer on the performance of GZO/p-Si heterojunctions fabricated by reactive co-sputtering of Zn–GaAs target is investigated.
Keyword(s):
Keyword(s):
Keyword(s):
Keyword(s):
2020 ◽
Vol 314
◽
pp. 112230
◽
2018 ◽
Vol 47
(7)
◽
pp. 3568-3576
◽
Keyword(s):
2019 ◽
Vol 193
◽
pp. 246-252
◽
Keyword(s):