BiVO4 Nanofiber-Based Field-Effect Transistors for Detection of Epinephrine/Adrenaline Hormones

2021 ◽  
Author(s):  
Sushmitha Veeralingam ◽  
Sushmee Badhulika
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Aluminum Foil ◽  
Urine Samples ◽  
Label Free ◽  
Flexible Surface ◽  
Label Free Detection

In this work, an ultrasensitive-BioFET is developed for chemiresistive, label-free detection of epinephrine hormone in urine samples. Flexible surface oxidized aluminum foil is used as a substrate. BiVO4 nanofibers fabricated...

scholarly journals Biologically sensitive field-effect transistors: from ISFETs to NanoFETs

2016 ◽  
Vol 60 (1) ◽  
pp. 81-90 ◽  
Author(s):  
Vivek Pachauri ◽  
Sven Ingebrandt
Keyword(s):  
Field Effect ◽  
Gate Dielectric ◽  
Gate Dielectrics ◽  
Field Effect Transistors ◽  
Silicon Nanowire ◽  
Label Free ◽  
Biomolecular Detection ◽  
New Device ◽  
Label Free Detection ◽  
History Of

Biologically sensitive field-effect transistors (BioFETs) are one of the most abundant classes of electronic sensors for biomolecular detection. Most of the time these sensors are realized as classical ion-sensitive field-effect transistors (ISFETs) having non-metallized gate dielectrics facing an electrolyte solution. In ISFETs, a semiconductor material is used as the active transducer element covered by a gate dielectric layer which is electronically sensitive to the (bio-)chemical changes that occur on its surface. This review will provide a brief overview of the history of ISFET biosensors with general operation concepts and sensing mechanisms. We also discuss silicon nanowire-based ISFETs (SiNW FETs) as the modern nanoscale version of classical ISFETs, as well as strategies to functionalize them with biologically sensitive layers. We include in our discussion other ISFET types based on nanomaterials such as carbon nanotubes, metal oxides and so on. The latest examples of highly sensitive label-free detection of deoxyribonucleic acid (DNA) molecules using SiNW FETs and single-cell recordings for drug screening and other applications of ISFETs will be highlighted. Finally, we suggest new device platforms and newly developed, miniaturized read-out tools with multichannel potentiometric and impedimetric measurement capabilities for future biomedical applications.

scholarly journals Super-Nernstian ion sensitive field-effect transistor exploiting charge screening in WSe2/MoS2 heterostructure

2021 ◽  
Vol 5 (1) ◽  
Author(s):  
Sooraj Sanjay ◽  
Mainul Hossain ◽  
Ankit Rao ◽  
Navakanta Bhat
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Point Of Care ◽  
Low Cost ◽  
Ph Sensor ◽  
Detection Sensitivity ◽  
Label Free ◽  
Back Gate ◽  
Dielectric Thickness ◽  
Label Free Detection

AbstractIon-sensitive field-effect transistors (ISFETs) have gained a lot of attention in recent times as compact, low-cost biosensors with fast response time and label-free detection. Dual gate ISFETs have been shown to enhance detection sensitivity beyond the Nernst limit of 59 mV pH−1 when the back gate dielectric is much thicker than the top dielectric. However, the thicker back-dielectric limits its application for ultrascaled point-of-care devices. In this work, we introduce and demonstrate a pH sensor, with WSe2(top)/MoS2(bottom) heterostructure based double gated ISFET. The proposed device is capable of surpassing the Nernst detection limit and uses thin high-k hafnium oxide as the gate oxide. The 2D atomic layered structure, combined with nanometer-thick top and bottom oxides, offers excellent scalability and linear response with a maximum sensitivity of 362 mV pH−1. We have also used technology computer-aided (TCAD) simulations to elucidate the underlying physics, namely back gate electric field screening through channel and interface charges due to the heterointerface. The proposed mechanism is independent of the dielectric thickness that makes miniaturization of these devices easier. We also demonstrate super-Nernstian behavior with the flipped MoS2(top)/WSe2(bottom) heterostructure ISFET. The results open up a new pathway of 2D heterostructure engineering as an excellent option for enhancing ISFET sensitivity beyond the Nernst limit, for the next-generation of label-free biosensors for single-molecular detection and point-of-care diagnostics.

Label-free detection of DNA using field-effect transistors

2006 ◽  
Vol 203 (14) ◽  
pp. 3399-3411 ◽  
Author(s):  
Sven Ingebrandt ◽  
Andreas Offenhäusser
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Label Free ◽  
Label Free Detection

scholarly journals Comprehensive Understanding of Silicon-Nanowire Field-Effect Transistor Impedimetric Readout for Biomolecular Sensing

Micromachines ◽  
2020 ◽  
Vol 12 (1) ◽  
pp. 39
Author(s):  
Abhiroop Bhattacharjee ◽  
Thanh Chien Nguyen ◽  
Vivek Pachauri ◽  
Sven Ingebrandt ◽  
Xuan Thang Vu
Keyword(s):  
Integrated Circuit ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Silicon Nanowire ◽  
Label Free ◽  
Impedance Sensing ◽  
Biomolecular Sensing ◽  
Label Free Detection ◽  
Effect Transistor ◽  
Detection Of Biomolecules

Impedance sensing with silicon nanowire field-effect transistors (SiNW-FETs) shows considerable potential for label-free detection of biomolecules. With this technique, it might be possible to overcome the Debye-screening limitation, a major problem of the classical potentiometric readout. We employed an electronic circuit model in Simulation Program with Integrated Circuit Emphasis (SPICE) for SiNW-FETs to perform impedimetric measurements through SPICE simulations and quantitatively evaluate influences of various device parameters to the transfer function of the devices. Furthermore, we investigated how biomolecule binding to the surface of SiNW-FETs is influencing the impedance spectra. Based on mathematical analysis and simulation results, we proposed methods that could improve the impedimetric readout of SiNW-FET biosensors and make it more explicable.

Label-Free Detection of BRAFV599E Gene Mutation Using Side-Gated Nanowire Field Effect Transistors

2018 ◽  
Vol 165 (13) ◽  
pp. B576-B581 ◽  
Author(s):  
Chi-Chang Wu ◽  
Yankuba B. Manga ◽  
Ming-Hsun Yang ◽  
Zheng-Shun Chien ◽  
Kuan-Sheng Lee
Keyword(s):  
Gene Mutation ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Label Free ◽  
Label Free Detection

scholarly journals Predicting Future Prospects of Aptamers in Field-Effect Transistor Biosensors

Molecules ◽  
2020 ◽  
Vol 25 (3) ◽  
pp. 680 ◽  
Author(s):  
Cao-An Vu ◽  
Wen-Yih Chen
Keyword(s):  
Small Molecules ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Field Effect Transistors ◽  
High Specificity ◽  
Label Free ◽  
Sensing Technology ◽  
Wide Range ◽  
Label Free Detection ◽  
Effect Transistor

Aptamers, in sensing technology, are famous for their role as receptors in versatile applications due to their high specificity and selectivity to a wide range of targets including proteins, small molecules, oligonucleotides, metal ions, viruses, and cells. The outburst of field-effect transistors provides a label-free detection and ultra-sensitive technique with significantly improved results in terms of detection of substances. However, their combination in this field is challenged by several factors. Recent advances in the discovery of aptamers and studies of Field-Effect Transistor (FET) aptasensors overcome these limitations and potentially expand the dominance of aptamers in the biosensor market.

scholarly journals Label-free detection of interleukin-6 using electrolyte gated organic field effect transistors

2017 ◽  
Vol 12 (5) ◽  
pp. 05F401 ◽  
Author(s):  
Chiara Diacci ◽  
Marcello Berto ◽  
Michele Di Lauro ◽  
Elena Bianchini ◽  
Marcello Pinti ◽  
...  
Keyword(s):  
Interleukin 6 ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Label Free ◽  
Organic Field Effect Transistors ◽  
Label Free Detection

scholarly journals Label free detection of miRNA-21 with Electrolyte Gated Organic Field Effect Transistors (EGOFETs)

2021 ◽  
pp. 113144
Author(s):  
Meenu Selvaraj ◽  
Pierpaolo Greco ◽  
Matteo Sensi ◽  
Gulseren Deniz Saygin ◽  
Noemi Bellassai ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Label Free ◽  
Organic Field Effect Transistors ◽  
Label Free Detection

scholarly journals Effect of channel length on the electrical response of carbon nanotube field-effect transistors to deoxyribonucleic acid hybridization

2014 ◽  
Vol 5 ◽  
pp. 2081-2091 ◽  
Author(s):  
Hari Krishna Salila Vijayalal Mohan ◽  
Jianing An ◽  
Yani Zhang ◽  
Chee How Wong ◽  
Lianxi Zheng
Keyword(s):  
Carbon Nanotube ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Electrical Response ◽  
Channel Length ◽  
Nucleic Acid Hybridization ◽  
Label Free ◽  
Single Walled Carbon Nanotube ◽  
Label Free Detection ◽  
Simultaneous Influence

A single-walled carbon nanotube (SWCNT) in a field-effect transistor (FET) configuration provides an ideal electronic path for label-free detection of nucleic acid hybridization. The simultaneous influence of more than one response mechanism in hybridization detection causes a variation in electrical parameters such as conductance, transconductance, threshold voltage and hysteresis gap. The channel length (L) dependence of each of these parameters necessitates the need to include them when interpreting the effect of L on the response to hybridization. Using the definitions of intrinsic effective mobility (µe) and device field-effect mobility (µf), two new parameters were defined to interpret the effect of L on the FET response to hybridization. Our results indicate that FETs with ≈300 µm long SWCNT exhibited the most appreciable response to hybridization, which complied with the variation trend in response to the newly defined parameters.

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