scholarly journals Comprehensive Understanding of Silicon-Nanowire Field-Effect Transistor Impedimetric Readout for Biomolecular Sensing

Micromachines ◽  
2020 ◽  
Vol 12 (1) ◽  
pp. 39
Author(s):  
Abhiroop Bhattacharjee ◽  
Thanh Chien Nguyen ◽  
Vivek Pachauri ◽  
Sven Ingebrandt ◽  
Xuan Thang Vu
Keyword(s):  
Integrated Circuit ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Silicon Nanowire ◽  
Label Free ◽  
Impedance Sensing ◽  
Biomolecular Sensing ◽  
Label Free Detection ◽  
Effect Transistor ◽  
Detection Of Biomolecules

Impedance sensing with silicon nanowire field-effect transistors (SiNW-FETs) shows considerable potential for label-free detection of biomolecules. With this technique, it might be possible to overcome the Debye-screening limitation, a major problem of the classical potentiometric readout. We employed an electronic circuit model in Simulation Program with Integrated Circuit Emphasis (SPICE) for SiNW-FETs to perform impedimetric measurements through SPICE simulations and quantitatively evaluate influences of various device parameters to the transfer function of the devices. Furthermore, we investigated how biomolecule binding to the surface of SiNW-FETs is influencing the impedance spectra. Based on mathematical analysis and simulation results, we proposed methods that could improve the impedimetric readout of SiNW-FET biosensors and make it more explicable.

scholarly journals Biologically sensitive field-effect transistors: from ISFETs to NanoFETs

2016 ◽  
Vol 60 (1) ◽  
pp. 81-90 ◽  
Author(s):  
Vivek Pachauri ◽  
Sven Ingebrandt
Keyword(s):  
Field Effect ◽  
Gate Dielectric ◽  
Gate Dielectrics ◽  
Field Effect Transistors ◽  
Silicon Nanowire ◽  
Label Free ◽  
Biomolecular Detection ◽  
New Device ◽  
Label Free Detection ◽  
History Of

Biologically sensitive field-effect transistors (BioFETs) are one of the most abundant classes of electronic sensors for biomolecular detection. Most of the time these sensors are realized as classical ion-sensitive field-effect transistors (ISFETs) having non-metallized gate dielectrics facing an electrolyte solution. In ISFETs, a semiconductor material is used as the active transducer element covered by a gate dielectric layer which is electronically sensitive to the (bio-)chemical changes that occur on its surface. This review will provide a brief overview of the history of ISFET biosensors with general operation concepts and sensing mechanisms. We also discuss silicon nanowire-based ISFETs (SiNW FETs) as the modern nanoscale version of classical ISFETs, as well as strategies to functionalize them with biologically sensitive layers. We include in our discussion other ISFET types based on nanomaterials such as carbon nanotubes, metal oxides and so on. The latest examples of highly sensitive label-free detection of deoxyribonucleic acid (DNA) molecules using SiNW FETs and single-cell recordings for drug screening and other applications of ISFETs will be highlighted. Finally, we suggest new device platforms and newly developed, miniaturized read-out tools with multichannel potentiometric and impedimetric measurement capabilities for future biomedical applications.

Handheld readout system for field-effect transistor biosensor arrays for label-free detection of biomolecules

2015 ◽  
Vol 212 (6) ◽  
pp. 1313-1319 ◽  
Author(s):  
Thanh Chien Nguyen ◽  
Miriam Schwartz ◽  
Xuan Thang Vu ◽  
Jörg Blinn ◽  
Sven Ingebrandt
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Label Free ◽  
Readout System ◽  
Biosensor Arrays ◽  
Label Free Detection ◽  
Effect Transistor ◽  
Detection Of Biomolecules

Poly-silicon nanowire field-effect transistor for ultrasensitive and label-free detection of pathogenic avian influenza DNA

2009 ◽  
Vol 24 (10) ◽  
pp. 3019-3024 ◽  
Author(s):  
Chih-Heng Lin ◽  
Cheng-Hsiung Hung ◽  
Cheng-Yun Hsiao ◽  
Horng-Chih Lin ◽  
Fu-Hsiang Ko ◽  
...  
Keyword(s):  
Avian Influenza ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Silicon Nanowire ◽  
Label Free ◽  
Pathogenic Avian Influenza ◽  
Poly Silicon ◽  
Label Free Detection ◽  
Effect Transistor

Progress in Silicon Nanowire-Based Field-Effect Transistor Biosensors for Label-Free Detection of DNA

2016 ◽  
Vol 34 (3) ◽  
pp. 308-316 ◽  
Author(s):  
Na Lu ◽  
Anran Gao ◽  
Hong Zhou ◽  
Yi Wang ◽  
Xun Yang ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Silicon Nanowire ◽  
Label Free ◽  
Label Free Detection ◽  
Effect Transistor

scholarly journals Predicting Future Prospects of Aptamers in Field-Effect Transistor Biosensors

Molecules ◽  
2020 ◽  
Vol 25 (3) ◽  
pp. 680 ◽  
Author(s):  
Cao-An Vu ◽  
Wen-Yih Chen
Keyword(s):  
Small Molecules ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Field Effect Transistors ◽  
High Specificity ◽  
Label Free ◽  
Sensing Technology ◽  
Wide Range ◽  
Label Free Detection ◽  
Effect Transistor

Aptamers, in sensing technology, are famous for their role as receptors in versatile applications due to their high specificity and selectivity to a wide range of targets including proteins, small molecules, oligonucleotides, metal ions, viruses, and cells. The outburst of field-effect transistors provides a label-free detection and ultra-sensitive technique with significantly improved results in terms of detection of substances. However, their combination in this field is challenged by several factors. Recent advances in the discovery of aptamers and studies of Field-Effect Transistor (FET) aptasensors overcome these limitations and potentially expand the dominance of aptamers in the biosensor market.

scholarly journals Modelling of Dynamic Properties of Silicon Carbide Junction Field-Effect Transistors (JFETs)

Energies ◽  
2020 ◽  
Vol 13 (1) ◽  
pp. 187 ◽  
Author(s):  
Kamil Bargieł ◽  
Damian Bisewski ◽  
Janusz Zarębski
Keyword(s):  
Silicon Carbide ◽  
Integrated Circuit ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Dynamic Properties ◽  
Modified Model ◽  
Spice Model ◽  
Capacitance Voltage ◽  
Effect Transistor ◽  
Switching Characteristics

The paper deals with the problem of modelling and analyzing the dynamic properties of a Junction Field Effect Transistor (JFET) made of silicon carbide. An examination of the usefulness of the built-in JFET Simulation Program with Integrated Circuit Emphasis (SPICE) model was performed. A modified model of silicon carbide JFET was proposed to increase modelling accuracy. An evaluation of the accuracy of the modified model was performed by comparison of the measured and calculated capacitance–voltage characteristics as well as the switching characteristics of JFETs.

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