Carrier dynamics at trench defects in InGaN/GaN quantum wells revealed by time-resolved cathodoluminescence
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Time-resolved cathodoluminescence offers new possibilities for the study of semiconductor nanostructures – including defects. The versatile combination of time, spatial, and spectral resolution of the technique can provide new insights...
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1995 ◽
2013 ◽
Vol 06
(02)
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pp. 1350021
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1996 ◽
Vol 35
(Part 1, No. 2B)
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pp. 1292-1298
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2021 ◽
Vol 408
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pp. 113107
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2020 ◽
Vol 11
(14)
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pp. 5476-5481