Accessing nanoscopic polarization reversal processes in an organic ferroelectric thin film

Nanoscale ◽  
2021 ◽  
Author(s):  
Sambit Mohapatra ◽  
Eric Beaurepaire ◽  
Wolfgang Weber ◽  
Martin Bowen ◽  
Samy Boukari ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electronic Devices ◽  
Ferroelectric Thin Film ◽  
Ferroelectric Material ◽  
Toxic Substances ◽  
Polarization Reversal

Towards eliminating toxic substances from electronic devices, Croconic Acid (CA) has great potential as a sublimable organic ferroelectric material. While studies on CA thin films are just beginning to emerge,...

Influence of electrodes on polarization-reversal characteristics of a ferroelectric thin film

2013 ◽  
Vol 250 (9) ◽  
pp. 1804-1809 ◽  
Author(s):  
Lian Cui ◽  
Zhiyou Han ◽  
Quan Xu ◽  
Xu Xu ◽  
Yukai Gao ◽  
...  
Keyword(s):  
Thin Film ◽  
Ferroelectric Thin Film ◽  
Polarization Reversal

Preparation and Characterization of MFM and MFIS Structures Using Sr2(Ta1划x, Nbx)2O7 Thin Film by Pulsed Laser Deposition

2000 ◽  
Vol 655 ◽  
Author(s):  
Masanori Okuyama ◽  
Toshiyuki Nakaiso ◽  
Minoru Noda
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Ferroelectric Thin Films ◽  
Laser Deposition ◽  
Polarization Reversal ◽  
Ambient Gas ◽  
Mfis Structure

AbstractSr2(Ta1划x, Nbx)2O7(STN) ferroelectric thin films have been prepared on SiO2/Si(100) substrates by the pulsed laser deposition (PLD) method. Preferential (110) and (151)-oriented STN thin films are deposited at a low temperature of 600°C in N2O ambient gas at 0.08 Torr. A counterclockwise C-V hysteresis was observed in the metal-ferroelectric-insulator-semiconductor (MFIS) structure using Sr2(Ta0.7, Nb0.3)2O7 on SiO2/Si deposited at 600°C. Memory window in the C-V curve spreads symmetrically towards both positive and negative directions when applied voltage increases and the window does not change in sweep rates ranging from 0.1 to 4.0×103 V/s. The C-V curve of the MFIS structure does not degrade after 1010 cycles of polarization reversal. The gate retention time is about 3.0×103 sec when the voltages and time of write pulse are ±15V and 1.0 sec, respectively, and hold bias was -0.5 V.

Highly transparent, all-oxide, heteroepitaxy ferroelectric thin film for flexible electronic devices

2018 ◽  
Vol 458 ◽  
pp. 540-545 ◽  
Author(s):  
Chuanlai Ren ◽  
Congbing Tan ◽  
Lunjun Gong ◽  
Mingkai Tang ◽  
Min Liao ◽  
...  
Keyword(s):  
Thin Film ◽  
Electronic Devices ◽  
Ferroelectric Thin Film ◽  
Flexible Electronic ◽  
Flexible Electronic Devices

CRITICAL BEHAVIOUR OF FERROELECTRIC THIN FILMS

2002 ◽  
Vol 16 (03) ◽  
pp. 473-480 ◽  
Author(s):  
JULIA M. WESSELINOWA ◽  
STEFFEN TRIMPER
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Scaling Laws ◽  
Transverse Field ◽  
Ferroelectric Thin Film ◽  
Ferroelectric Thin Films ◽  
Number Of Layers ◽  
Ising Systems ◽  
2D And 3D ◽  
Good Agreement

Based on an Ising model in a transverse field (TIM) and using a Green's function formalism the critical exponents of the polarization β and of the longitudinal susceptibility γ are calculated for a ferroelectric thin film consisting of N layers. The exponents depends on the number of layers in a significant manner. Whereas for N=3 layers the exponents are β=0.131 and γ=1.739 there is a change over to β=0.315 and γ=1.239 in case of N=30. The datas are in a good agreement with predictions for 2D and 3D Ising systems. Using scaling laws other exponents like α, δ, η and ν are obtained, too.

Effect of Rapid Thermal Processing on the Crystallization Properties of PbTiO3 Ferroelectric Thin Film

1996 ◽  
Vol 433 ◽  
Author(s):  
Jianguo Zhu ◽  
Meng Chen ◽  
Wenbing Peng ◽  
Fahua Lan ◽  
E.V. Sviridov ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Thermal Processing ◽  
Interfacial Layer ◽  
Ion Beam ◽  
Semiconductor Devices ◽  
Rapid Thermal Processing ◽  
Ferroelectric Thin Film ◽  
Processing Temperature ◽  
Time Duration

AbstractThe fabrication methods of ferroelectric (FE) thin films have received special attention in recent years because of the needs of FE thin films integrated with semiconductor devices. Rapid thermal processing (RTP) has developed in fabrication of FE thin films because it can reduce processing temperature and time duration, and it also improves the properties of FE thin films compatible with semiconductor devices. The thin film samples used were prepared by a multi-ion-beam reactive cosputtering system (MIBRECS) at room temperature. The samples were then subjected to a post-deposition annealing in a RTP system. It was found that PbTiO3 (PT) thin film could grow on amorphous or polycrystal interfacial layer and the PT thin films annealed by RTP showed the prefered [110] and [100] textures. The effect of interfacial layer on the crystallization and microstructure of the films was also discussed.

MOCVD Process of Ferroelectric Lead Germanate Thin Films and Bottom Electrode Effects

1998 ◽  
Vol 541 ◽  
Author(s):  
Fengyan Zhang ◽  
Tingkai Li ◽  
Tue Nguyen ◽  
Sheng Teng Hsu
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Nonvolatile Memory ◽  
Small Deviation ◽  
Ferroelectric Properties ◽  
Secondary Phase ◽  
Ferroelectric Material ◽  
Lead Germanate ◽  
Stability Range ◽  
Axis Orientation

AbstractPb5Ge3O11 is a new promising candidate for nonvolatile memory such as one-transistor memory applications because of its moderate polarization and relative low dielectric constant. But this material is a low symmetry ferroelectric material and it is said the spontaneous polarization exists only along the c-axis. Furthermore, in the PbO- GeO 2 system, the stability range for the Pb5Ge3O11 phase is very limited and that even a relatively small deviation in composition or in growth temperature could lead to the formation of other lead germanate compounds. Many methods have been used to grow Pb5Ge3O11 film. This is the first time the Pb5Ge3O1 thin film has been successfully grown by advanced MOCVD technique with a liquid delivery system. This paper will discuss the MOCVD process for growing Pb5Ge3O11 thin films on different electrodes (Pt, Ir and Pt/Ir). The properties of these electrodes, the microstructures of the Pb5Ge3O11 thin films on these electrodes and their ferroelectric properties will be discussed. The advanced two-step deposition technique has been used to improve the uniformity of the Pb5Ge3O11 film. Pure c-axis oriented Pb5Ge3O11 thin film and polycrystalline Pb5Ge3O11 thin film with preferred c-axis orientation and some Pb3GeO5 secondary phase have been successfully grown on these electrodes with good ferroelectric properties.

scholarly journals Degradable and Dissolvable Thin-Film Materials for the Applications of New-Generation Environmental-Friendly Electronic Devices

2020 ◽  
Vol 10 (4) ◽  
pp. 1320 ◽  
Author(s):  
Xiaoyan Liu ◽  
Mingmin Shi ◽  
Yuhao Luo ◽  
Lvyang Zhou ◽  
Zhi Rong Loh ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Sustainable Development ◽  
Resistive Switching ◽  
Electronic Waste ◽  
Electronic Devices ◽  
Preparation Methods ◽  
Von Neumann ◽  
Environmental Friendly ◽  
Switching Devices

The environmental pollution generated by electronic waste (e-waste), waste-gas, and wastewater restricts the sustainable development of society. Environmental-friendly electronics made of degradable, resorbable, and compatible thin-film materials were utilized and explored, which was beneficial for e-waste dissolution and sustainable development. In this paper, we present a literature review about the development of various degradable and disposable thin-films for electronic applications. The corresponding preparation methods were simply reviewed and one of the most exciting and promising methods was discussed: Printing electronics technology. After a short introduction, detailed applications in the environment sensors and eco-friendly devices based on these degradable and compatible thin-films were mainly reviewed, finalizing with the main conclusions and promising perspectives. Furthermore, the future on these upcoming environmental-friendly electronic devices are proposed and prospected, especially on resistive switching devices, showing great potential applications in artificial intelligence (AI) and the Internet of Thing (IoT). These resistive switching devices combine the functions of storage and computations, which can complement the off-shelf computing based on the von Neumann architecture and advance the development of the AI.

DYNAMIC PROPERTIES OF DIELECTRIC SUSCEPTIBILITY IN FERROELECTRIC THIN FILMS

2016 ◽  
Vol 23 (03) ◽  
pp. 1650010 ◽  
Author(s):  
LIAN CUI ◽  
HAIYING CUI ◽  
CHUNMEI WU ◽  
GUIHUA YANG ◽  
ZELONG HE ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Applied Field ◽  
Landau Theory ◽  
Dynamic Properties ◽  
Ferroelectric Thin Film ◽  
Ferroelectric Thin Films ◽  
Dielectric Susceptibility ◽  
Surface Transition ◽  
Frequency Temperature

In this paper, frequency, temperature, film thickness, surface effects, and various parameters dependence of dielectric susceptibility is investigated theoretically for ferroelectric thin films by the modified Landau theory under an AC applied field. The dielectric susceptibility versus AC applied field shows butterfly-shaped behavior, and depends strongly on the frequency and amplitude of the field and temperature. Our study shows that the existence of the surface transition layer can depress the dielectric susceptibility of a ferroelectric thin film. These results are well consistent with the phenomena reported in experiments.

The Evolution of Activation Field with Temperature in Ferroelectric Copolymer of Vinylidene Fluoride and Trifluoroethylene Films

2013 ◽  
Vol 785-786 ◽  
pp. 761-766
Author(s):  
Lin Jiang ◽  
Xiang Jian Meng ◽  
X. L. Zhao ◽  
B. B. Tian ◽  
B. L. Liu ◽  
...  
Keyword(s):  
Thin Film ◽  
Glass Transition ◽  
Vinylidene Fluoride ◽  
Ferroelectric Thin Film ◽  
Transition Process ◽  
The Other ◽  
Polarization Reversal ◽  
X Ray Diffraction ◽  
X Ray ◽  
Polyimide Substrate

Vinylidene fluoride and trifluoroethylene [P(VDF-TrFE)] ferroelectric thin film was spin-coated on Au-coated polyimide substrate and its polarization reversal was investigated by analyzing the evolution of activation field (α) with temperature. Although α is nearly a constant between 300 and 330 K, it increases linearly when temperature rates between 200 and 230 K, and between 230 and 300 K. On the other hand, the intensity of X-ray diffraction for P(VDF-TrFE) films from 200 to 330 K indicates that glass-transition process plays a significant role in both the microstructure and the polarization reversal of P(VDF-TrFE) copolymer.

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