MOCVD Process of Ferroelectric Lead Germanate Thin Films and Bottom Electrode Effects

1998 ◽  
Vol 541 ◽  
Author(s):  
Fengyan Zhang ◽  
Tingkai Li ◽  
Tue Nguyen ◽  
Sheng Teng Hsu
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Nonvolatile Memory ◽  
Small Deviation ◽  
Ferroelectric Properties ◽  
Secondary Phase ◽  
Ferroelectric Material ◽  
Lead Germanate ◽  
Stability Range ◽  
Axis Orientation

AbstractPb5Ge3O11 is a new promising candidate for nonvolatile memory such as one-transistor memory applications because of its moderate polarization and relative low dielectric constant. But this material is a low symmetry ferroelectric material and it is said the spontaneous polarization exists only along the c-axis. Furthermore, in the PbO- GeO 2 system, the stability range for the Pb5Ge3O11 phase is very limited and that even a relatively small deviation in composition or in growth temperature could lead to the formation of other lead germanate compounds. Many methods have been used to grow Pb5Ge3O11 film. This is the first time the Pb5Ge3O1 thin film has been successfully grown by advanced MOCVD technique with a liquid delivery system. This paper will discuss the MOCVD process for growing Pb5Ge3O11 thin films on different electrodes (Pt, Ir and Pt/Ir). The properties of these electrodes, the microstructures of the Pb5Ge3O11 thin films on these electrodes and their ferroelectric properties will be discussed. The advanced two-step deposition technique has been used to improve the uniformity of the Pb5Ge3O11 film. Pure c-axis oriented Pb5Ge3O11 thin film and polycrystalline Pb5Ge3O11 thin film with preferred c-axis orientation and some Pb3GeO5 secondary phase have been successfully grown on these electrodes with good ferroelectric properties.

scholarly journals Preparation of Glass Plate-Supported Nanostructure ZnO Thin Film Deposited by Sol-Gel Spin-Coating Technique and Its Photocatalytic Degradation to Monoazo Textile Dye

2008 ◽  
Vol 2008 ◽  
pp. 1-5 ◽  
Author(s):  
Mohammad Hossein Habibi ◽  
Mohammad Khaledi Sardashti
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Photocatalytic Degradation ◽  
Spin Coating ◽  
Sol Gel ◽  
Glass Plate ◽  
Zno Thin Films ◽  
Visible Range ◽  
Textile Dye ◽  
Axis Orientation

Glass plate-supported nanostructure ZnO thin films were deposited by sol-gel spin coating. Films were preheated at275∘Cfor 10 minutes and annealed at 350, 450, and550∘Cfor 80 minutes. The ZnO thin films were transparent ca 80–90% in visible range and revealed that absorption edges at about 370 nm. Thec-axis orientation improves and the grain size increases which was indicated by an increase in intensity of the (002) peak at34.4∘in XRD corresponding to the hexagonal ZnO crystal. The photocatalytic degradation of X6G an anionic monoazo dye, in aqueous solutions, was investigated and the effects of some operational parameters such as the number of layer and reusability of ZnO nanostructure thin film were examined. The results showed that the five-layer coated glass surfaces have a very high photocatalytic performance.

The Dielectric Properties of Pb0.65Ba0.35ZrO3 Thin Films

2006 ◽  
Vol 306-308 ◽  
pp. 1313-1318
Author(s):  
J.S. Kim ◽  
B.H. Park ◽  
T.J. Choi ◽  
Se Hyun Shin ◽  
Jae Chul Lee ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Dielectric Properties ◽  
Dielectric Loss ◽  
Deposition Temperature ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Axis Orientation ◽  
Capacitance Voltage ◽  
Bst Thin Film

Pb0.65Ba0.35ZrO3 (PBZ) thin films have been grown on MgO (001) substrates by pulsed-laser deposition (PLD). We have compared the structural and dielectric properties of PBZ films grown at various temperatures. A highly c-axis orientation has appeared at PBZ film grown at the deposition temperature of 550oC. The c-axis oriented PBZ film has also shown the largest tunability among all the PBZ films in capacitance-voltage measurements. The tunability and dielectric loss of the PBZ film was 20% and 0.00959, respectively. In addition, we have compared the temperature coefficient of capacitance (TCC) of a PBZ film with that of a Ba0.5Sr0.5TiO3 (BST) film which is a well-known material applicable to tunable microwave devices. We have confirmed that TCC value of a PBZ thin film was three-times smaller than that of a BST thin film.

scholarly journals Effects of LaNiO3 Seed Layer on the Microstructure and Electrical Properties of Ferroelectric BZT/PZT/BZT Thin Films

2021 ◽  
Vol 8 ◽  
Author(s):  
Jinyu Ruan ◽  
Chao Yin ◽  
Tiandong Zhang ◽  
Hao Pan
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Surface Roughness ◽  
Electrical Properties ◽  
Seed Layer ◽  
Ferroelectric Properties ◽  
Lower Surface ◽  
Multilayer Films ◽  
Multilayer Thin Films ◽  
Orientation Growth

Ferroelectric multilayer films attract great attention for a wide variation of applications. The synergistic effect by combining different functional layers induces distinctive electrical properties. In this study, ferroelectric BaZr0.2Ti0.8O3/PbZr0.52Ti0.48O3/BaZr0.2Ti0.8O3 (BZT/PZT/BZT) multilayer thin films are designed and fabricated by using the magnetron sputtering method, and a LaNiO3 (LNO) seed layer is introduced. The microstructures and electrical properties of the BZT/PZT/BZT films with and without the LNO seed layer are systematically studied. The results show that the BZT/PZT/BZT/LNO thin film exhibits much lower surface roughness and a preferred (100)-orientation growth, with the growth template and tensile stress provided by the LNO layer. Moreover, an enhanced dielectric constant, decreased dielectric loss, and improved ferroelectric properties are achieved in BZT/PZT/BZT/LNO thin films. This work reveals that the seed layer can play an important role in improving the microstructure and properties of ferroelectric multilayer films.

Ferroelectric Property of Ion Beam Enhanced Deposited Lithium Tantalate Thin Film

2011 ◽  
Vol 335-336 ◽  
pp. 1418-1423
Author(s):  
De Yin Zhang ◽  
Wei Qian ◽  
Kun Li ◽  
Jian Sheng Xie
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Surface Morphology ◽  
Hysteresis Loop ◽  
Ferroelectric Property ◽  
Ion Beam ◽  
Ferroelectric Properties ◽  
Fatigue Property ◽  
Lithium Tantalate ◽  
Electric Filed

The Ion Beam Enhanced Deposited (IBED) lithium tantalate (LiTaO3) thin film samples with Al/LiTaO3/Pt electrode structure were prepared on the Pt/Ti/SiO2/Si(100) and SiO2/Si(100) substrate respectively. The crystallization, surface morphology, ferroelectric property, and fatigue property of the prepared samples with the different annealed processes were investigated. The XRD measured results show that the prepared samples have the polycrystal structure of LiTaO3 with the preferred orientation of <012> and <104> located at the 2θ of 23.60 and 32.70 respectively. The SEM morphology analysis reveals the prepared film annealed at 550°C is uniform, smooth and crack-free on the surface and cross section. The ferroelectric property measured results show that the remanent polarization Pr of the samples annealed at different temperature almost increase with the electric field intensity stronger. The leakage current makes the hysteresis loop of the samples subjected to a strong measured electric filed difficult to appear the same saturation hysteresis loop as the single-crystal LiTaO3. The prepared samples annealed at 550°C have a Pr value of 11.5μC/cm2 when subjected to the electrical field of 400kV/cm. The breakdown voltage of the 587nm thick thin film sample is high as to 680 kV/cm. The fatigue property measured results show only 15.17% Pr drop of the prepared films annealed at 550°C appear after 5×1010 cycles polarized by the 10MHz sinusoidal signal with the peak-to-peak amplitude of 10 Volt. The ferroelectric properties of the prepared films meet the practical application requirements of charge response measurement of the LiTaO3 infrared detector owe to the Pr of the prepared films annealed at different temperature large beyond 10μC/cm2 when the prepared films subjected to a strong electric filed larger than 400 kV/cm. The experimental results also show that the surface morphology, the ferroelectric and fatigue properties of the IBED LiTaO3 thin films are significant better than those of the Sol-Gel derived LiTaO3 thin films.

ELECTRICAL AND OPTICAL PROPERTIES OF ZnO THIN FILMS PREPARED BY R.F. MAGNETRON SPUTTERING

2011 ◽  
Vol 25 (20) ◽  
pp. 2741-2749 ◽  
Author(s):  
J. C. ZHOU ◽  
L. LI ◽  
L. Y. RONG ◽  
B. X. ZHAO ◽  
Y. M. CHEN ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Optical Properties ◽  
Magnetron Sputtering ◽  
Oxide Thin Film ◽  
Zno Thin Films ◽  
Zno Thin Film ◽  
Electrical And Optical Properties ◽  
Axis Orientation ◽  
Sputtering Power

High transparency and conductivity of transparent conducting oxide thin film are very important for improving the efficiency of solar cells. ZnO thin film is a better candidate for transparent conductive layer of solar cell. N-type ZnO thin films were prepared by radio-frequency magnetron sputtering on glass substrates. ZnO thin films underwent annealing treatment after deposition. The influence of the sputtering power on the surface morphology, the electrical and optical properties were studied by AFM, XRD, UV2450 and HMS-3000. The experimental results indicate that the crystal quality of ZnO thin film is improved and all films show higher c-axis orientation with increasing sputtering power from 50 to 125 W. The average transparency of ZnO thin films is higher than 90% in the range of 400–900 nm between the sputtering power of 50–100 W. After the rapid thermal annealing at 550°C for 300 s under N2 ambient, the minimum resistivity reach to 10-2Ω⋅ cm .

The Microstructure, Phase and Ferroelectric Properties of PZT Thin Films on Oriented Multilayer Electrodes

1999 ◽  
Vol 596 ◽  
Author(s):  
Tingkai Li ◽  
Sheng Teng Hsu ◽  
Yufei Gao ◽  
Mark Engelhard
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Hysteresis Loop ◽  
Perovskite Phase ◽  
Ferroelectric Properties ◽  
Pyrochlore Phase ◽  
Experimental Results ◽  
Butyl Ether ◽  
Pzt Thin Films ◽  
Pzt Thin Film

AbstractThree kinds of oriented electrodes of Pt, Ir and Pt/Ir electrodes were prepared using electron beam evaporation techniques for deposition of PZT thin films. An oxide MOCVD reactor with liquid delivery system was used for the growth of PZT thin films. [Pb(thd)2], Zr(TMHD)4 and Ti(IPO)4 were dissolved in a mixed solvent of tetrahydrofuran or butyl ether, isopropanol and tetraglyme to form a precursor source. The deposition temperature and pressure were 500 - 650°C and 5 - 10 Torr, respectively. The experimental results showed PZT thin film deposited on various electrodes had different phase formation, microstructure and ferroelectric property. The X-ray patterns showed the perovskite phase of PZT was formed on both Ir and Pt/Ir electrodes at 550°C. The grain size of the PZT thin film increases after a further, higher temperature annealing. The as-deposited PZT thin film on Pt electrode exhibits pyrochlore phase at 550°C. The phase is transformed to perovskite phase after 650°C annealing. The experimental results also indicated that the MOCVD PZT thin film on Pt/Ir exhibits better ferroelectric and electrical properties compared to those deposited on Pt and Ir electrodes. A 300 nm thick PZT thin film on Pt/Ir electrode has a square, well saturated, and symmetrical hysteresis loop with 2Pr value of 40 μC/cm2 and 2Ec of 73 kV/cm at an applied voltage of 5 V. The hysteresis loop of the PZT thin film is almost saturated at 2 V. The leakage current of the film is 6.16 × 10−7 A/cm2 at 100 KV/cm. The electrode effects on ferroelectric properties of PZT thin films also have been investigated.

Enhanced Electrical properties in Mn-doped Bi3.25La0.75Ti3O12 thin films

2005 ◽  
Vol 902 ◽  
Author(s):  
Sushil Kumar Singh ◽  
Hiroshi Ishiwara
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electrical Properties ◽  
Coercive Field ◽  
Remanent Polarization ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Switching Field ◽  
Mn Doping ◽  
Mn Doped

AbstractMn-doped Bi3.25La0.75Ti3O12 (BLT) thin films were fabricated by depositing sol-gel solutions on Pt/Ti/SiO2/Si <100> substrates. The surface morphology and ferroelectric properties of Mn-doped BLT films depend upon the orientation of the films. Small amount of Mn-doping in BLT films influences the ferroelectric properties of the films, that is, it enhances the remanent polarization and reduces the coercive field. The 1% Mn-doped BLT films show enhanced remanent polarization and reduced the coercive field by about 22%. To the contrary, Mn-doping more than 1% decreases polarization gradually. Mn-doping significantly improves the fatigue resistance of BLT films. The reduced polarization in the 3.3% Mn-doped thin film recovers during switching cycles higher than 5 × 105. Under high switching field, the probability of field-assisted unpinning of domains is expected to be high and this may be the main cause for increase in polarization after 5 × 105 in the 3.3% Mn-doped BLT film.

Ferroelectric properties in all solution prepared Bi6Fe2Ti3O18/Ba0.92La0.08SnO3 thin films

2016 ◽  
Vol 30 (35) ◽  
pp. 1650394
Author(s):  
Li Zhang ◽  
Yibao Li ◽  
Zhen Tang ◽  
Yan Deng ◽  
Hui Yuan ◽  
...  
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Thin Films ◽  
Scanning Electron Microscopy ◽  
Coercive Field ◽  
Ferroelectric Properties ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transparent Conducting ◽  
Scanning Electron

In this paper, all solution processing is used to prepare both the transparent conducting Ba[Formula: see text]La[Formula: see text]SnO3 (BLSO) thin films as bottom electrodes and ferroelectric Bi6Fe2Ti3O[Formula: see text] (BFTO) thin films. The derived BFTO thin films are characterized by X-ray diffraction (XRD) and field-emission scanning electron microscopy (FE-SEM). The derived thin film is polycrystalline with dense microstructures. The remnant polarization [Formula: see text] at the measurement frequency of 2 kHz can reach [Formula: see text] under the 500 kV/cm electric field and the coercive field [Formula: see text] is 410 kV/cm. The results will provide a feasible route to prepare BFTO thin films on transparent conducting bottom electrodes to realize multifunctionality.

Growth of Highly C-Axis Oriented AlN Films at Water Cooling Condition

2013 ◽  
Vol 718-720 ◽  
pp. 20-24
Author(s):  
J. Yang ◽  
X.Q. Jiao ◽  
R. Zhang ◽  
H. Zhong ◽  
Y. Shi ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Rf Sputtering ◽  
Cooling Condition ◽  
Water Cooling ◽  
X Ray Diffraction ◽  
Axis Orientation ◽  
Aln Film ◽  
Influence Of Water

In this work, the aluminum nitride (AlN) thin film with highly c-axis orientation was prepared successfully at water cooling condition by RF sputtering. The influence of water cooling on the crystalline quality of AlN thin film is researched. The crystalline characteristics and microstructure of AlN thin films deposited on Si (111) and Mo/Si (111) were researched by X-ray diffraction (XRD) and field emission scanning electron microscope (FESEM). The results indicated that highly c-axis AlN films can be synthetized at water cooling condition. The AlN film deposited on Mo thin film is titled to the surface, when that is perpendicular to the silicon substrate. Different models are proposed to explain the growth behaviors of AlN thin films on the two kinds of substrates.

Local Hysteresis Behavior of Ferroelectric Thin Films of Si added PbTiO3

2003 ◽  
Vol 784 ◽  
Author(s):  
V. R. Palkar ◽  
M. Higgins ◽  
S. C. Purandare ◽  
R. Pinto ◽  
S. Bhattacharya
Keyword(s):  
Thin Films ◽  
Grain Boundaries ◽  
Ferroelectric Properties ◽  
Ferroelectric Material ◽  
Laser Deposition ◽  
Si Substrate ◽  
Mole Percent ◽  
Hysteresis Behavior ◽  
The Matrix ◽  
Ferroelectric Hysteresis

ABSTRACTWe report ferroelectric properties and local hysteresis behavior of 2 mole percent Si added PbTiO3 thin films grown on Pt/TiO2/SiO2/Si substrate by using pulsed laser deposition technique. The ferroelectric hysteresis loop and scanning piezoresponce images obtained on these films by using AFM with conducting tip demonstrate excellent properties, which are equivalent to any other established ferroelectric material like PZT. Si segregating at the grain boundaries controls grain growth. The grain size and grain boundaries play a crucial role in determining ferroelectric hysteresis properties. The presence of Si in the matrix can be useful in tuning the properties.

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