Understanding the interfacial charge transfer in CVD grown Bi2O2Se/CsPbBr3 nanocrystals heterostructure and its exploitation in superior photodetection: Experiment vs. Theory

Nanoscale ◽  
2021 ◽  
Author(s):  
Md Tarik Hossain ◽  
Mandira Das ◽  
Joydip Ghosh ◽  
Subhradip Ghosh ◽  
Pravat K. Giri
Keyword(s):  
Charge Transfer ◽  
Energy Harvesting ◽  
Crucial Role ◽  
High Performance ◽  
Van Der Waals ◽  
Interfacial Charge Transfer ◽  
Semiconductor Heterostructure ◽  
Efficient Charge ◽  
Energy Harvesting Devices ◽  
Interfacial Charge

Efficient charge transfer in 2D semiconductor heterostructure plays a crucial role in high-performance photodetectors and energy harvesting devices. Non-van der Waals 2D Bi2O2Se has enormous potential for high-performance optoelectronics, though...

In situ synthesis of FeP-decorated Ti–Fe2O3: an effective strategy to improve the interfacial charge transfer in the photoelectrochemical water oxidation reaction

2019 ◽  
Vol 9 (20) ◽  
pp. 5812-5818 ◽  
Author(s):  
Qijing Bu ◽  
Shuo Li ◽  
Qiannan Wu ◽  
Yanhong Lin ◽  
Dejun Wang ◽  
...  
Keyword(s):  
Charge Transfer ◽  
Water Oxidation ◽  
Oxidation Reaction ◽  
In Situ Synthesis ◽  
Effective Strategy ◽  
Interfacial Charge Transfer ◽  
Efficient Charge ◽  
Interfacial Charge ◽  
Photoelectrochemical Water Oxidation

The unprecedented FeP/Ti–Fe2O3 possesses the advantages of efficient charge transfer in the bulk photoanode and at the interface of the photoanode and the electrolyte.

Influence of a substrate on ultrafast interfacial charge transfer and dynamical interlayer excitons in monolayer WSe2/graphene heterostructures

Nanoscale ◽  
2020 ◽  
Vol 12 (4) ◽  
pp. 2498-2506 ◽  
Author(s):  
Xiao Xing ◽  
Litao Zhao ◽  
Wenjie Zhang ◽  
Zhuo Wang ◽  
Huimin Su ◽  
...  
Keyword(s):  
Charge Transfer ◽  
Van Der Waals ◽  
Van Der Waals Heterostructures ◽  
Interfacial Charge Transfer ◽  
Optoelectronic Applications ◽  
Interfacial Charge

Efficient interfacial light–electric interconversion in van der Waals heterostructures is critical for their optoelectronic applications.

scholarly journals Origins of genuine Ohmic van der Waals contact between indium and MoS2

2021 ◽  
Vol 5 (1) ◽  
Author(s):  
Bum-Kyu Kim ◽  
Tae-Hyung Kim ◽  
Dong-Hwan Choi ◽  
Hanul Kim ◽  
Kenji Watanabe ◽  
...  
Keyword(s):  
Charge Transfer ◽  
Contact Resistance ◽  
Density Functional ◽  
Van Der Waals ◽  
Conduction Band Edge ◽  
General Strategy ◽  
Transition Metal Dichalcogenide ◽  
Interfacial Charge Transfer ◽  
Gap States ◽  
Interfacial Charge

AbstractThe achievement of ultraclean Ohmic van der Waals (vdW) contacts at metal/transition-metal dichalcogenide (TMDC) interfaces would represent a critical step for the development of high-performance electronic and optoelectronic devices based on two-dimensional (2D) semiconductors. Herein, we report the fabrication of ultraclean vdW contacts between indium (In) and molybdenum disulfide (MoS2) and the clarification of the atomistic origins of its Ohmic-like transport properties. Atomically clean In/MoS2 vdW contacts are achieved by evaporating In with a relatively low thermal energy and subsequently cooling the substrate holder down to ~100 K by liquid nitrogen. We reveal that the high-quality In/MoS2 vdW contacts are characterized by a small interfacial charge transfer and the Ohmic-like transport based on the field-emission mechanism over a wide temperature range from 2.4 to 300 K. Accordingly, the contact resistance reaches ~600 Ω μm and ~1000 Ω μm at cryogenic temperatures for the few-layer and monolayer MoS2 cases, respectively. Density functional calculations show that the formation of large in-gap states due to the hybridization between In and MoS2 conduction band edge states is the microscopic origins of the Ohmic charge injection. We suggest that seeking a mechanism to generate strong density of in-gap states while maintaining the pristine contact geometry with marginal interfacial charge transfer could be a general strategy to simultaneously avoid Fermi-level pinning and minimize contact resistance for 2D vdW materials.

scholarly journals Interfacial Charge Transfer Circumventing Momentum Mismatch at Two-Dimensional van der Waals Heterojunctions

Nano Letters ◽  
2017 ◽  
Vol 17 (6) ◽  
pp. 3591-3598 ◽  
Author(s):  
Haiming Zhu ◽  
Jue Wang ◽  
Zizhou Gong ◽  
Young Duck Kim ◽  
James Hone ◽  
...  
Keyword(s):  
Charge Transfer ◽  
Van Der Waals ◽  
Two Dimensional ◽  
Interfacial Charge Transfer ◽  
Interfacial Charge
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