In-plane ferroelectricity in few-layered GeS and its van der Waals ferroelectric diodes
Few-layered GeS nanoflakes synthesized by a new post-thinning method show in-plane ferroelectric behaviour. The robust interfacial ferroelectricity in the GeS/InSe heterostructure yields a tunable photovoltaic performance.
1984 ◽
Vol 98
(1)
◽
pp. 590-591
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Keyword(s):
Keyword(s):
1974 ◽
Vol 35
(C7)
◽
pp. C7-113-C7-119
◽