Superior and Stable Ferroelectric Properties of Hafnium-Zirconium-Oxide Thin Films Deposited via Atomic Layer Deposition using Cyclopentadienyl-Based Precursors without Annealing
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HfO2-based ferroelectric thin films deposited via atomic layer deposition have been extensively studied as promising candidates for next-generation ferroelectric devices. The conversion of an amorphous Hf1-xZrxO2 film to the ferroelectric...
2010 ◽
Vol 157
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pp. G193
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2012 ◽
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pp. 14656-14664
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2019 ◽
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2015 ◽
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pp. 181-187
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2003 ◽
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pp. 251-261
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pp. 217-223
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