Design and Tailoring of Two-dimensional Schottky, PN and Tunnelling Junctions for Electronics and Optoelectronics

Nanoscale ◽  
2021 ◽  
Author(s):  
Liang Lv ◽  
Jun Yu ◽  
Man Hu ◽  
Shuming Yin ◽  
Fuwei Zhuge ◽  
...  

Owing to their superior carrier mobility, strong light-matter interaction, and flexibility at the atomically thin thickness, two-dimensional (2D) materials are attracting wide interests in electronic and optoelectronic devices, including rectifying...

Nano Letters ◽  
2017 ◽  
Vol 17 (8) ◽  
pp. 4689-4697 ◽  
Author(s):  
Jinxiu Wen ◽  
Hao Wang ◽  
Weiliang Wang ◽  
Zexiang Deng ◽  
Chao Zhuang ◽  
...  

InfoMat ◽  
2020 ◽  
Vol 3 (1) ◽  
pp. 36-60
Author(s):  
Li Tao ◽  
Zefeng Chen ◽  
Zhiyong Li ◽  
Jiaqi Wang ◽  
Xin Xu ◽  
...  

2021 ◽  
Author(s):  
Teresa Crisci ◽  
Luigi Moretti ◽  
Mariano Gioffrè ◽  
Maurizio Casalino

Since its discovery in 2004, graphene has attracted the interest of the scientific community due to its excellent properties of high carrier mobility, flexibility, strong light-matter interaction and broadband absorption. Despite of its weak light optical absorption and zero band gap, graphene has demonstrated impressive results as active material for optoelectronic devices. This success pushed towards the investigation of new two-dimensional (2D) materials to be employed in a next generation of optoelectronic devices with particular reference to the photodetectors. Indeed, most of 2D materials can be transferred on many substrates, including silicon, opening the path to the development of Schottky junctions to be used for the infrared detection. Although Schottky near-infrared silicon photodetectors based on metals are not a new concept in literature the employment of two-dimensional materials instead of metals is relatively new and it is leading to silicon-based photodetectors with unprecedented performance in the infrared regime. This chapter aims, first to elucidate the physical effect and the working principles of these devices, then to describe the main structures reported in literature, finally to discuss the most significant results obtained in recent years.


2021 ◽  
Vol 7 (21) ◽  
pp. eabf8049
Author(s):  
Rui Su ◽  
Sanjib Ghosh ◽  
Timothy C. H. Liew ◽  
Qihua Xiong

Strong light-matter interaction enriches topological photonics by dressing light with matter, which provides the possibility to realize active nonlinear topological devices with immunity to defects. Topological exciton polaritons—half-light, half-matter quasiparticles with giant optical nonlinearity—represent a unique platform for active topological photonics. Previous demonstrations of exciton polariton topological insulators demand cryogenic temperatures, and their topological properties are usually fixed. Here, we experimentally demonstrate a room temperature exciton polariton topological insulator in a perovskite zigzag lattice. Polarization serves as a degree of freedom to switch between distinct topological phases, and the topologically nontrivial polariton edge states persist in the presence of onsite energy perturbations, showing strong immunity to disorder. We further demonstrate exciton polariton condensation into the topological edge states under optical pumping. These results provide an ideal platform for realizing active topological polaritonic devices working at ambient conditions, which can find important applications in topological lasers, optical modulation, and switching.


Nanophotonics ◽  
2020 ◽  
Vol 9 (2) ◽  
pp. 435-451 ◽  
Author(s):  
Taehee Kang ◽  
Young-Mi Bahk ◽  
Dai-Sik Kim

AbstractThrough the manipulation of metallic structures, light–matter interaction can enter into the realm of quantum mechanics. For example, intense terahertz pulses illuminating a metallic nanotip can promote terahertz field–driven electron tunneling to generate enormous electron emission currents in a subpicosecond time scale. By decreasing the dimension of the metallic structures down to the nanoscale and angstrom scale, one can obtain a strong field enhancement of the incoming terahertz field to achieve atomic field strength of the order of V/nm, driving electrons in the metal into tunneling regime by overcoming the potential barrier. Therefore, designing and optimizing the metal structure for high field enhancement are an essential step for studying the quantum phenomena with terahertz light. In this review, we present several types of metallic structures that can enhance the coupling of incoming terahertz pulses with the metals, leading to a strong modification of the potential barriers by the terahertz electric fields. Extreme nonlinear responses are expected, providing opportunities for the terahertz light for the strong light–matter interaction. Starting from a brief review about the terahertz field enhancement on the metallic structures, a few examples including metallic tips, dipole antenna, and metal nanogaps are introduced for boosting the quantum phenomena. The emerging techniques to control the electron tunneling driven by the terahertz pulse have a direct impact on the ultrafast science and on the realization of next-generation quantum devices.


Author(s):  
Kai Ren ◽  
Huabing Shu ◽  
Wenyi Huo ◽  
Zhen Cui ◽  
Jin Yu ◽  
...  

Two-dimensional (2D) materials with moderate bandgap and high carrier mobility are decent for the applications in the optoelectronics. In this work, we present a systematically investigation of the mechanical, electronic...


2021 ◽  
Author(s):  
Pooja Bhatt ◽  
kuljeet Kaur ◽  
Jino George

Here, we observed enhancement of charge transport in 2D materials by light-matter strong coupling. Charge transport mobility is enhanced by 50 times under ON resonance condition. A clear correlation in the effective mass of the polaritonic state and Schottky barrier height may be indicating a coherent nature of light-matter interaction.<br>


Nanoscale ◽  
2020 ◽  
Vol 12 (36) ◽  
pp. 18931-18937
Author(s):  
Wenhan Zhou ◽  
Shengli Zhang ◽  
Shiying Guo ◽  
Hengze Qu ◽  
Bo Cai ◽  
...  

2D materials with direct bandgaps and high carrier mobility are considered excellent candidates for next-generation electronic and optoelectronic devices.


2013 ◽  
Vol 21 (26) ◽  
pp. 32572 ◽  
Author(s):  
A. Benz ◽  
S. Campione ◽  
S. Liu ◽  
I. Montano ◽  
J. F. Klem ◽  
...  

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