High-performance monolayer Na3Sb shrinking transistors: a DFT-NEGF study

Nanoscale ◽  
2020 ◽  
Vol 12 (36) ◽  
pp. 18931-18937
Author(s):  
Wenhan Zhou ◽  
Shengli Zhang ◽  
Shiying Guo ◽  
Hengze Qu ◽  
Bo Cai ◽  
...  
Keyword(s):  
High Performance ◽  
Carrier Mobility ◽  
2D Materials ◽  
Optoelectronic Devices ◽  
Next Generation ◽  
High Carrier Mobility ◽  
High Carrier

2D materials with direct bandgaps and high carrier mobility are considered excellent candidates for next-generation electronic and optoelectronic devices.

Mechanical, electronic and optical properties of novel B2P6 monolayer: ultrahigh carrier mobility and strong optical absorption

2021 ◽  
Author(s):  
Kai Ren ◽  
Huabing Shu ◽  
Wenyi Huo ◽  
Zhen Cui ◽  
Jin Yu ◽  
...  
Keyword(s):  
Optical Properties ◽  
Optical Absorption ◽  
Carrier Mobility ◽  
2D Materials ◽  
Two Dimensional ◽  
Electronic And Optical Properties ◽  
High Carrier Mobility ◽  
High Carrier

Two-dimensional (2D) materials with moderate bandgap and high carrier mobility are decent for the applications in the optoelectronics. In this work, we present a systematically investigation of the mechanical, electronic...

scholarly journals Coulomb drag transistor using a graphene and MoS2 heterostructure

2020 ◽  
Vol 3 (1) ◽  
Author(s):  
Youngjo Jin ◽  
Min-Kyu Joo ◽  
Byoung Hee Moon ◽  
Hyun Kim ◽  
Sanghyup Lee ◽  
...  
Keyword(s):  
High Performance ◽  
Carrier Mobility ◽  
Carrier Transport ◽  
Passive Layer ◽  
Strong Interactions ◽  
Practical Application ◽  
Coulomb Drag ◽  
Strong Coulomb ◽  
High Carrier Mobility ◽  
High Carrier

Abstract Two-dimensional (2D) heterostructures often provide extraordinary carrier transport as exemplified by superconductivity or excitonic superfluidity. Recently, a double-layer graphene (Gr) separated by few-layered boron nitride demonstrated the Coulomb drag phenomenon: carriers in the active layer drag carriers in the passive layer. Here, we propose high-performance Gr/MoS2 heterostructure transistors operating via Coulomb drag, exhibiting a high carrier mobility (∼3700 cm2 V−1 s−1) and on/off-current ratio (∼108) at room temperature. The van der Waals gap at the Gr/MoS2 interface induces strong interactions between the interlayer carriers, whose recombination is suppressed by the Schottky barrier between p-Gr and n-MoS2, clearly distinct from the presence of insulating layers. The sign reversal of lateral voltage clearly demonstrates the Coulomb drag in carrier transport. Hole-like behavior of electrons in the n-MoS2 is observed in magnetic field, indicating strong Coulomb drag at low temperature. Our Coulomb drag transistor thus provides a shortcut for the practical application of 2D heterostructures.

Ultra-sensitive near-infrared graphene photodetectors with nanopillar antennas

Nanoscale ◽  
2017 ◽  
Vol 9 (44) ◽  
pp. 17459-17464 ◽  
Author(s):  
Yu Liu ◽  
Wen Huang ◽  
Tianxun Gong ◽  
Yue Su ◽  
Hua Zhang ◽  
...  
Keyword(s):  
Absorption Spectrum ◽  
Carrier Mobility ◽  
Near Infrared ◽  
Optoelectronic Devices ◽  
Broad Absorption ◽  
High Carrier Mobility ◽  
High Carrier

Graphene has been demonstrated as a candidate for optoelectronic devices due to its broad absorption spectrum and ultra-high carrier mobility.

Very High Carrier Mobility for High-Performance CMOS on a Si(110) Surface

2007 ◽  
Vol 54 (6) ◽  
pp. 1438-1445 ◽  
Author(s):  
Akinobu Teramoto ◽  
Tatsufumi Hamada ◽  
Masashi Yamamoto ◽  
Philippe Gaubert ◽  
Hiroshi Akahori ◽  
...  
Keyword(s):  
High Performance ◽  
Carrier Mobility ◽  
High Carrier Mobility ◽  
High Carrier ◽  
Very High

Prediction of high-temperature Chern insulator with half-metallic edge states in asymmetry-functionalized stanene

Nanoscale ◽  
2018 ◽  
Vol 10 (43) ◽  
pp. 20226-20233 ◽  
Author(s):  
Meng-han Zhang ◽  
Chang-wen Zhang ◽  
Pei-ji Wang ◽  
Sheng-shi Li
Keyword(s):  
High Temperature ◽  
Carrier Mobility ◽  
2D Materials ◽  
High Curie Temperature ◽  
Two Dimensional ◽  
Edge States ◽  
Half Metallic ◽  
Practical Applications ◽  
High Carrier Mobility ◽  
High Carrier

A great obstacle for the practical applications of the quantum anomalous Hall (QAH) effect is the lack of suitable two-dimensional (2D) materials with a sizable nontrivial band gap, high Curie temperature, and high carrier mobility.

scholarly journals Monolayer H-Si-P semiconductors: Structural stability, electronic structure, optical properties, and Prospects for photocatalytic water splitting

2021 ◽  
Author(s):  
Xiaoqin Shu ◽  
Jiahe Lin ◽  
Hong Zhang
Keyword(s):  
Optical Properties ◽  
Electronic Structure ◽  
Water Splitting ◽  
Carrier Mobility ◽  
State Of The Art ◽  
2D Materials ◽  
Linear Dichroism ◽  
Group Iv ◽  
High Carrier Mobility ◽  
High Carrier

Group IV and V monolayers are the promising state-of-the-art 2D materials owing to their high carrier mobility, tunable bandgaps, and optical linear dichroism along with outstanding electronic and thermoelectric properties....

The role of third cation doping on phase stability, carrier transport and carrier suppression in amorphous oxide semiconductors

2020 ◽  
Vol 8 (39) ◽  
pp. 13798-13810
Author(s):  
Austin Reed ◽  
Chandon Stone ◽  
Kwangdong Roh ◽  
Han Wook Song ◽  
Xingyu Wang ◽  
...  
Keyword(s):  
Phase Stability ◽  
High Performance ◽  
Carrier Mobility ◽  
Carrier Transport ◽  
Oxide Semiconductors ◽  
Amorphous Oxide ◽  
Cation Doping ◽  
High Carrier Mobility ◽  
High Carrier

Amorphous InAlZnO demonstrates greater phase stability and carrier suppression capability while maintaining a high carrier mobility for high performance TFTs.

Novel dialkoxy-substituted benzodithienothiophenes for high-performance organic field-effect transistors

2015 ◽  
Vol 3 (41) ◽  
pp. 10892-10897 ◽  
Author(s):  
Ji Zhang ◽  
Kai Zhang ◽  
Weifeng Zhang ◽  
Zupan Mao ◽  
Man Shing Wong ◽  
...  
Keyword(s):  
Field Effect ◽  
High Performance ◽  
Carrier Mobility ◽  
Field Effect Transistors ◽  
Side Chains ◽  
Organic Field Effect Transistors ◽  
High Carrier Mobility ◽  
High Carrier

Angular-shaped benzodithieno[3,2-b]thiophene (BDTT) derivatives with two alkoxy side-chains were synthesized, and an OFET device based on BDTT-4 exhibited a high carrier mobility of up to 2.6 cm2V−1s−1.

scholarly journals High-Performance Photodetectors Based on Nanostructured Perovskites

Nanomaterials ◽  
2021 ◽  
Vol 11 (4) ◽  
pp. 1038
Author(s):  
Chunlong Li ◽  
Jie Li ◽  
Zhengping Li ◽  
Huayong Zhang ◽  
Yangyang Dang ◽  
...  
Keyword(s):  
High Performance ◽  
Carrier Mobility ◽  
Carrier Lifetime ◽  
Imaging Spectroscopy ◽  
Fast Response ◽  
Fiber Optic Communications ◽  
Control Chemical ◽  
High Carrier Mobility ◽  
High Carrier ◽  
Device Miniaturization

In recent years, high-performance photodetectors have attracted wide attention because of their important applications including imaging, spectroscopy, fiber-optic communications, remote control, chemical/biological sensing and so on. Nanostructured perovskites are extremely suitable for detective applications with their long carrier lifetime, high carrier mobility, facile synthesis, and beneficial to device miniaturization. Because the structure of the device and the dimension of nanostructured perovskite have a profound impact on the performance of photodetector, we divide nanostructured perovskite into 2D, 1D, and 0D, and review their applications in photodetector (including photoconductor, phototransistor, and photodiode), respectively. The devices exhibit high performance with high photoresponsivity, large external quantum efficiency (EQE), large gain, high detectivity, and fast response time. The intriguing properties suggest that nanostructured perovskites have a great potential in photodetection.

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