Influence of interface inhomogeneity on the electrical transport mechanism of CdSe nanowire/Au Schottky junctions

2018 ◽  
Vol 20 (30) ◽  
pp. 19932-19937 ◽  
Author(s):  
Weifeng Jin ◽  
Xiaojing Mu ◽  
Kun Zhang ◽  
Zhengguo Shang ◽  
Lun Dai
Keyword(s):  
Schottky Barrier ◽  
Electrical Transport ◽  
Transport Mechanism ◽  
Single Nanowire ◽  
Schottky Junctions ◽  
Barrier Inhomogeneity

Schottky barrier inhomogeneity and its influence on the electrical transport mechanism of single nanowire-based Schottky junctions have been investigated.

Hysteresis Reversible MoS2 Transistor

2021 ◽  
Author(s):  
Banglin Cao ◽  
Zegao Wang ◽  
Xuya Xiong ◽  
Libin Gao ◽  
Jiheng Li ◽  
...  
Keyword(s):  
Electrical Transport ◽  
Transport Mechanism ◽  
Rational Design ◽  
Electronic Device

An improved understanding of the origin of the electrical transport mechanism is of importance to the rational design of the highly performance electronic device. However, the complex interfacial environment and...

Effect of heating on electrical transport in AlGaN/GaN Schottky barrier diodes on Si substrate

2014 ◽  
Vol 14 ◽  
pp. S98-S102 ◽  
Author(s):  
Hyeonseok Woo ◽  
Yongcheol Jo ◽  
Jongmin Kim ◽  
Cheonghyun Roh ◽  
Junho Lee ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Electrical Transport ◽  
Schottky Barrier Diodes ◽  
Si Substrate

Electrical transport mechanism in Al/V2O5/Al microdevices

Ionics ◽  
2001 ◽  
Vol 7 (1-2) ◽  
pp. 130-137 ◽  
Author(s):  
C. V. Ramana ◽  
B. Srinivasulu Naidu ◽  
O. M. Hussain ◽  
C. Julien
Keyword(s):  
Electrical Transport ◽  
Transport Mechanism

TEM Study and Hall Measurement of nc-Si Prepared by Controlled Deposition

1992 ◽  
Vol 283 ◽  
Author(s):  
Masami Nakata ◽  
Isamu Shimizu
Keyword(s):  
Electrical Transport ◽  
Transport Mechanism ◽  
Crystalline Silicon ◽  
Nanocrystalline Silicon ◽  
Dominant Factor ◽  
Microscopic Structure ◽  
Hall Effect Measurements ◽  
Sample Structure ◽  
Controlled Deposition ◽  
General Transport

ABSTRACTWe report the results of a study in which we combined growth experiments with measurements of the nc-structure and of electrical transport Samples were prepared by plasma enhanced-CVD using SiF4 and H2 gases. We also added PH3 and H2 as control parameters for structural change. The microscopic structure was directly observed by TEM. Electron transport in nc-Si was investigated by Hall effect measurements performed at temperatures from 100K to 400K. We produced samples in which the Hall mobility was applied from general transport mechanism of poly crystalline silicon. However, from TEM observation, we conclude that dominant factor on electrical transport strongly depends on the sample structure, and nanocrystalline-silicon structure is so varied as to make it difficult to determine the transport mechanism without the observation of the microscopic structure.

scholarly journals Structure, microstructure, electrical transport mechanism and magnetoresistance in La0.8Ag0.2MnO3

2019 ◽  
Vol 1402 ◽  
pp. 066011
Author(s):  
B Kurniawan ◽  
N A Sahara ◽  
A Imadudin ◽  
I N Rahman ◽  
D S Razaq ◽  
...  
Keyword(s):  
Electrical Transport ◽  
Transport Mechanism

Influence of process parameters on the electrical transport mechanism in sprayed CdS films

1987 ◽  
Vol 15 (3) ◽  
pp. 189-208 ◽  
Author(s):  
Shailaja Kolhe ◽  
S.K. Kulkarni ◽  
M.G. Takwale ◽  
B.R. Marathe ◽  
V.G. Bhide
Keyword(s):  
Process Parameters ◽  
Electrical Transport ◽  
Transport Mechanism ◽  
Influence Of Process Parameters ◽  
Cds Films

Electron Transmission Through Modified Schottky Barriers

2001 ◽  
Vol 685 ◽  
Author(s):  
Kevin L. Jensen
Keyword(s):  
Schottky Barrier ◽  
Conduction Band ◽  
Current Density ◽  
Transport Mechanism ◽  
Airy Function ◽  
Numerical Approach ◽  
Schottky Barriers ◽  
Present Treatment ◽  
One Dimensional ◽  
Electron Transmission

AbstractThe effects of a Coulomb-like potential in the Schottky barrier existing between a material-diamond interface is analyzed. The inclusion is intended to mimic the effects of an ionized trap within the barrier, and therefore to account for charge injection into the conduction band of diamond via a Poole-Frenkel transport mechanism. The present treatment is to provide a qualitative account of the increase in current density near the inclusion, which can be substantial. The model is first reduced to an analytically tractable one-dimensional tunneling problem addressable by an Airy Function approach in order to investigate the nature of the effect. A more comprehensive numerical approach is then applied. Finally, statistical arguments are used to estimate emission site densities using the results of the aforementioned analysis.

Current transport mechanism of AlGaN/GaN Schottky barrier diode with fully recessed Schottky anode

2014 ◽  
Vol 54 (1) ◽  
pp. 011001 ◽  
Author(s):  
Yao Yao ◽  
Jian Zhong ◽  
Yue Zheng ◽  
Fan Yang ◽  
Yiqiang Ni ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Transport Mechanism ◽  
Schottky Barrier Diode ◽  
Current Transport ◽  
Current Transport Mechanism
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