Visible-Blind Ultraviolet Narrowband Photomultiplication-Type Organic Photodetector with an Ultrahigh External Quantum Efficiency over 1000000%

2021 ◽  
Author(s):  
Dechao Guo ◽  
Liqing Yang ◽  
Jingcheng Zhao ◽  
Ji Li ◽  
Guo He ◽  
...  
Keyword(s):  
Visible Light ◽  
Quantum Efficiency ◽  
External Quantum Efficiency ◽  
High Performance ◽  
Infrared Light ◽  
Organic P ◽  
Uv Photodetector ◽  
Organic Photodetector ◽  
Visible Blind

The visible-blind ultraviolet (UV) photodetector can detect UV signals and is not interfered by visible light or infrared light in the environment. In order to realize high-performance visible-blind UV organic...

A High Performance UV Photodetector from Thin Film Diamond

1995 ◽  
Vol 416 ◽  
Author(s):  
Robert D. Mckeag ◽  
Michael D. Whitfield ◽  
Simon Sm Chan ◽  
Lisa Ys Pang ◽  
Richard B. Jackman
Keyword(s):  
Thin Film ◽  
Visible Light ◽  
Quantum Efficiency ◽  
Dark Current ◽  
External Quantum Efficiency ◽  
High Performance ◽  
Uv Light ◽  
High Sensitivity ◽  
Uv Photodetector ◽  
Deep Uv

ABSTRACTThin film diamond has been used to fabricate a photodetector which displays high sensitivity to deep UV light, with an external quantum efficiency of greater than one, a dark current of less than 0.1nA and which is near ‘blind’ to visible light.

scholarly journals Inverted ternary OPD based on PEIE

2021 ◽  
Author(s):  
Tao An ◽  
Suiyang Liu
Keyword(s):  
Buffer Layer ◽  
Quantum Efficiency ◽  
Active Layer ◽  
Broad Spectrum ◽  
External Quantum Efficiency ◽  
Optical Power ◽  
Organic Photodetector ◽  
Cathode Buffer Layer ◽  
Diode Mode ◽  
Conventional Device

Abstract This paper proposes an inverted ternary organic photodetector (OPD), whose structure is ITO/PEIE/PC61BM/P3HT:PCPDTBT/MoO3 /Al. The use of PEIE as the cathode buffer layer avoids the influence of acidic PEDOT:PSS on the surface and life of the conventional device . The preparation of the ternary active layer ensures the photoelectric characteristics of the device in the visible-infrared broad spectrum range. In this experiment, the effect of PEIE thickness on the working mode of the device was studied by changing the concentration of the spin-coated PEIE solution. Finally, when the solution of PEIE is less than 0.45wt%, the device works in the diode mode, on the contrary, it works in the photoconductive mode. And under 550nm illumination (optical power 4.02mW/cm2) , the device achieves a responsivity of 1.64A/W and an external quantum efficiency of 370%.

scholarly journals Record High External Quantum Efficiency of 19.2% Achieved in Light-Emitting Diodes of Colloidal Quantum Wells Enabled by Hot-Injection Shell Growth

2019 ◽  
Author(s):  
Baiquan Liu ◽  
Yemliha Altintas ◽  
Lin Wang ◽  
Sushant Shendre ◽  
Manoj Sharma ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Quantum Efficiency ◽  
External Quantum Efficiency ◽  
High Performance ◽  
High Efficiency ◽  
Light Emitting Diodes ◽  
Shell Growth ◽  
Light Emitting ◽  
Hot Injection ◽  
Key Factor

<p> Colloidal quantum wells (CQWs) are regarded as a new, highly promising class of optoelectronic materials thanks to their unique excitonic characteristics of high extinction coefficient and ultranarrow emission bandwidth. Although the exploration of CQWs in light-emitting diodes (LEDs) is impressive, the performance of CQW-LEDs lags far behind compared with other types of LEDs (e.g., organic LEDs, colloidal quantum-dot LEDs, and perovskite LEDs). Herein, for the first time, the authors show high-efficiency CQW-LEDs reaching close to the theoretical limit. A key factor for this high performance is the exploitation of hot-injection shell (HIS) growth of CQWs, which enables a near-unity photoluminescence quantum yield (PLQY), reduces nonradiative channels, ensures smooth films and enhances the stability. Remarkably, the PLQY remains 95% in solution and 87% in film despite rigorous cleaning. Through systematically understanding their shape-, composition- and device- engineering, the CQW-LEDs using CdSe/Cd<sub>0.25</sub>Zn<sub>0.75</sub>S core/HIS CQWs exhibit a maximum external quantum efficiency of 19.2%. Additionally, a high luminance of 23,490 cd m<sup>-2</sup>, extremely saturated red color with the Commission Internationale de L’Eclairage coordinates of (0.715, 0.283) and stable emission are obtained. The findings indicate that HIS grown CQWs enable high-performance solution-processed LEDs, which may pave the path for CQW-based display and lighting technologies.</p>

High-performance narrow spectrum green phosphorescent top-emitting organic light-emitting devices with external quantum efficiency up to 38%

2021 ◽  
Author(s):  
Xiaokang Li ◽  
Wenxing Liu ◽  
Kai Chen ◽  
Ruixia Wu ◽  
Guo-Jun Liu ◽  
...  
Keyword(s):  
Quantum Efficiency ◽  
External Quantum Efficiency ◽  
High Performance ◽  
Cavity Length ◽  
Strong Dependence ◽  
Emission Peak ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Organic Light ◽  
Micro Cavity

Abstract In this work, we have experimentally demonstrated the efficacy of micro-cavity effect in realizing high-performance top-emitting organic light-emitting diodes (TEOLEDs). By optimizing the thickness of top Yb/Ag electrode and cavity length, highly efficient green TEOLED with external quantum efficiency as high as 38% was achieved. A strong dependence of electroluminescent (EL) performances and spectrum on cavity length was observed, and there was also a significant angle dependence of EL spectrum. Ultimately, ultra-high current efficiency up to 161.17 cd/A (3.2 V) was obtained by the device with emission peak at 552 nm, which is 35 nm longer than the intrinsic emission peak (517 nm) of utilized green emitter. Interestingly, this device displayed narrow emission with full-width at half-maximum (FWHM) of less than 20 nm, which was obtained by increasing the Ag layer thickness.

Effective film surface treatment for improving external quantum efficiency of photomultiplication type organic photodetector

2021 ◽  
pp. 095400832110214
Author(s):  
Zheng Xiao ◽  
Haitao Xu ◽  
Wenyue Liang ◽  
Binfang Wu ◽  
Yufeng Shi ◽  
...  
Keyword(s):  
Quantum Efficiency ◽  
Active Layer ◽  
External Quantum Efficiency ◽  
Film Surface ◽  
Electrical Performance ◽  
Hole Injection ◽  
Light Illumination ◽  
Methanol Treatment ◽  
Organic Photodetector ◽  
Response Current

A simple yet effective method based on methanol treatment is proposed to enhance the external quantum efficiency (EQE) of the photomultiplication type organic photodetector with a structure of Glass/ITO/PEDOT:PSS/P3H:PC71BM (100:1, wt./wt.)/Al. By modifying the PEDOT:PSS film surface with methanol, the EQE of photodetector significantly improved within a broad wavelength range of 300–700 nm. The maximum EQE of 25300% occurs at the wavelength of 350 nm in the methanol-treated device under −9 V bias, which more than doubles that (11500%) of the device without treatment. In addition, as a result of the methanol treatment, the detectivity of the device improved from 3.72 × 1012 to 7.24 × 1012 Jones at −9 V under 350 nm light illumination. The large improvement is attributed to the fact that the methanol treatment can improve the electrical performance of the PEDOT:PSS by removing the insulator PSS within the film and also result in PC71BM aggregations in the active layer. The latter can enhance the tunneling hole injection by the intensified energy-level bending, which is induced by both the trapped electrons in these aggregations and accumulated ones near Al electrode. As a result, the modification of both the PEDOT:PSS layer and the active layer increases the response current, resulting in the EQE improvement.

Boosting reverse intersystem crossing by increasing donors in triarylboron/phenoxazine hybrids: TADF emitters for high-performance solution-processed OLEDs

2016 ◽  
Vol 4 (20) ◽  
pp. 4402-4407 ◽  
Author(s):  
Yuan Liu ◽  
Guohua Xie ◽  
Kailong Wu ◽  
Zhenghui Luo ◽  
Tao Zhou ◽  
...  
Keyword(s):  
Quantum Efficiency ◽  
External Quantum Efficiency ◽  
High Performance ◽  
Intersystem Crossing ◽  
Solution Processed

A triarylboron/phenoxazine hybrid TADF emitter exhibits efficient reverse intersystem crossing and the device achieves a maximum external quantum efficiency of 13.9%.

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