scholarly journals Cu-ion-induced n- to p-type switching in organic thermoelectric polyazacycloalkane/carbon nanotubes

2021 ◽  
Author(s):  
Shinichi Hata ◽  
Riku Nakata ◽  
Soichiro Yasuda ◽  
Hiroki Ihara ◽  
Yukou Du ◽  
...  

The semiconducting properties of polyazacycloalkane/carbon nanotubes film can be changed from n-type to p-type by Cu ions, which simplifies module manufacturing.

2007 ◽  
Vol 124-126 ◽  
pp. 1309-1312
Author(s):  
Nguyen Duc Hoa ◽  
Nguyen Van Quy ◽  
Gyu Seok Choi ◽  
You Suk Cho ◽  
Se Young Jeong ◽  
...  

A new type of gas sensor was realized by directly depositing carbon nanotube on nano channels of the anodic alumina oxide (AAO) fabricated on p-type silicon substrate. The carbon nanotubes were synthesized by thermal chemical vapor deposition at a very high temperature of 1200 oC to improve the crystallinity. The device fabrication process was also developed. The contact of carbon nanotubes and p-type Si substrate showed a Schottky behavior, and the Schottky barrier height increased with exposure to gases while the overall conductivity decreased. The sensors showed fast response and recovery to ammonia gas upon the filling (400 mTorr) and evacuation.


Energies ◽  
2019 ◽  
Vol 12 (23) ◽  
pp. 4561 ◽  
Author(s):  
Nguyen T. Hung ◽  
Ahmad R. T. Nugraha ◽  
Riichiro Saito

Thermoelectric (TE) material is a class of materials that can convert heat to electrical energy directly in a solid-state-device without any moving parts and that is environmentally friendly. The study and development of TE materials have grown quickly in the past decade. However, their development goes slowly by the lack of cheap TE materials with high Seebeck coefficient and good electrical conductivity. Carbon nanotubes (CNTs) are particularly attractive as TE materials because of at least three reasons: (1) CNTs possess various band gaps depending on their structure, (2) CNTs represent unique one-dimensional carbon materials which naturally satisfies the conditions of quantum confinement effect to enhance the TE efficiency and (3) CNTs provide us with a platform for developing lightweight and flexible TE devices due to their mechanical properties. The TE power factor is reported to reach 700–1000 W / m K 2 for both p-type and n-type CNTs when purified to contain only doped semiconducting CNT species. Therefore, CNTs are promising for a variety of TE applications in which the heat source is unlimited, such as waste heat or solar heat although their figure of merit Z T is still modest (0.05 at 300 K). In this paper, we review in detail from the basic concept of TE field to the fundamental TE properties of CNTs, as well as their applications. Furthermore, the strategies are discussed to improve the TE properties of CNTs. Finally, we give our perspectives on the tremendous potential of CNTs-based TE materials and composites.


2021 ◽  
Vol 119 (2) ◽  
pp. 023302
Author(s):  
Noah J. Stanton ◽  
Rachelle Ihly ◽  
Brenna Norton-Baker ◽  
Andrew J. Ferguson ◽  
Jeffrey L. Blackburn

2011 ◽  
Vol 2 (4) ◽  
pp. 652-660 ◽  
Author(s):  
Juergen Bartelmess ◽  
Christian Ehli ◽  
Juan-José Cid ◽  
Miguel García-Iglesias ◽  
Purificación Vázquez ◽  
...  

Author(s):  
Abhishek Kumar ◽  
Nikhil Dhawan

Carbon nanotube bundles were precisely grown atop a p-type silicon wafer that had been treated with catalysts to produce geometries that resemble three-dimensional nano-models to extract more power from the sun. The embedded carbon nanotubes bundles on silicon wafer promise more opportunity for each photon of sunlight to interact with resulting solar cell, as a result of increase of surface area available to produce electricity. The paper discusses morphology of grown nanotubes on silicon wafer along with future prospects of Si-CNTs fabricated solar cells.


2014 ◽  
Vol 26 (2) ◽  
pp. 024004 ◽  
Author(s):  
Catherine Marichy ◽  
Nicola Donato ◽  
Mariangela Latino ◽  
Marc Georg Willinger ◽  
Jean-Philippe Tessonnier ◽  
...  

2002 ◽  
Vol 66 (13) ◽  
Author(s):  
M. M. Tardío ◽  
R. Ramírez ◽  
R. González ◽  
Y. Chen

2018 ◽  
Vol 12 (1) ◽  
pp. 29-36 ◽  
Author(s):  
Yusuke Shiomi ◽  
◽  
Yoshikazu Hirai ◽  
Osamu Tabata ◽  
Toshiyuki Tsuchiya

A high-yield, bridged assembly of single-walled carbon nanotubes (SWCNT) was demonstrated using single-strand DNA (ssDNA) modification, dielectrophoresis (DEP), and electroless deposition of gold. ssDNA modification is used for the mono-dispersion of an SWCNT solution for DEP. Gold deposition after DEP was used for the electrical and mechanical clamping of assembled SWCNTs. DEP conditions were investigated, and the best conditions, namely, 2 Vpp, 1 kHz, 1 min for 200-nm gap electrodes, resulted in 8 single-assembly and 19 multiple-assembly SWCNTs between 33 pairs of electrode gaps. The electrical properties of the assembled ssDNA-modified SWCNTs were measured as a back-gate type of FET, and both metallic and semiconducting properties were observed.


2009 ◽  
pp. 3705 ◽  
Author(s):  
Jennifer E. Klare ◽  
Ian P. Murray ◽  
Joshua Goldberger ◽  
Samuel I. Stupp

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