In SituStudy of Redox and of p-Type Semiconducting Properties of Vanadyl Pyrophosphate and of V–P–O Catalysts during the Partial Oxidation ofn-Butane to Maleic Anhydride

1997 ◽  
Vol 167 (1) ◽  
pp. 106-117 ◽  
Author(s):  
Jean-Marie Herrmann ◽  
Philippe Vernoux ◽  
Kossi E. Béré ◽  
Michel Abon
Keyword(s):  
Maleic Anhydride ◽  
Partial Oxidation ◽  
Vanadyl Pyrophosphate ◽  
Semiconducting Properties ◽  
P Type

Partial oxidation of d -xylose to maleic anhydride and acrylic acid over vanadyl pyrophosphate

2014 ◽  
Vol 71 ◽  
pp. 285-293 ◽  
Author(s):  
Touraj Ghaznavi ◽  
Cristian Neagoe ◽  
Gregory S. Patience
Keyword(s):  
Maleic Anhydride ◽  
Acrylic Acid ◽  
Partial Oxidation ◽  
Vanadyl Pyrophosphate

High-Yield Butane to Maleic Anhydride Direct Oxidation on Vanadyl Pyrophosphate Supported on Heat-Conductive Materials: β-SiC, Si3N4, and BN

2001 ◽  
Vol 203 (2) ◽  
pp. 495-508 ◽  
Author(s):  
Marc J Ledoux ◽  
Claude Crouzet ◽  
Cuong Pham-Huu ◽  
Vincent Turines ◽  
Kostantinos Kourtakis ◽  
...  
Keyword(s):  
Maleic Anhydride ◽  
High Yield ◽  
Vanadyl Pyrophosphate ◽  
Direct Oxidation ◽  
Conductive Materials

scholarly journals Cu-ion-induced n- to p-type switching in organic thermoelectric polyazacycloalkane/carbon nanotubes

2021 ◽  
Author(s):  
Shinichi Hata ◽  
Riku Nakata ◽  
Soichiro Yasuda ◽  
Hiroki Ihara ◽  
Yukou Du ◽  
...  
Keyword(s):  
Carbon Nanotubes ◽  
Semiconducting Properties ◽  
P Type ◽  
Cu Ions

The semiconducting properties of polyazacycloalkane/carbon nanotubes film can be changed from n-type to p-type by Cu ions, which simplifies module manufacturing.

scholarly journals p-type semiconducting properties in lithium-doped MgO single crystals

2002 ◽  
Vol 66 (13) ◽  
Author(s):  
M. M. Tardío ◽  
R. Ramírez ◽  
R. González ◽  
Y. Chen
Keyword(s):  
Single Crystals ◽  
Semiconducting Properties ◽  
P Type

Cr, Mo and W used as VPO promoters in the partial oxidation of n-butane to maleic anhydride

2005 ◽  
Vol 107-108 ◽  
pp. 323-329 ◽  
Author(s):  
Beatriz T. Pierini ◽  
Eduardo A. Lombardo
Keyword(s):  
Maleic Anhydride ◽  
Partial Oxidation

scholarly journals Effect of Gate Dielectrics on the Performance of P-Type Cu2O TFTs Processed at Room Temperature

2013 ◽  
Vol 856 ◽  
pp. 215-219 ◽  
Author(s):  
H.A. Al-Jawhari ◽  
J.A. Caraveo-Frescsa
Keyword(s):  
Indium Tin Oxide ◽  
Room Temperature ◽  
Single Phase ◽  
Gate Dielectric ◽  
Gate Dielectrics ◽  
Operating Voltage ◽  
Dc Magnetron Sputtering ◽  
Post Annealing ◽  
Semiconducting Properties ◽  
P Type

Single-phase Cu2O films with p-type semiconducting properties were successfully deposited by reactive DC magnetron sputtering at room temperature followed by post annealing process at 200°C. Subsequently, such films were used to fabricate bottom gate p-channel Cu2O thin film transistors (TFTs). The effect of using high-κ SrTiO3 (STO) as a gate dielectric on the Cu2O TFT performance was investigated. The results were then compared to our baseline process which uses a 220 nm aluminum titanium oxide (ATO) dielectric deposited on a glass substrate coated with a 200 nm indium tin oxide (ITO) gate electrode. We found that with a 150 nm thick STO, the Cu2O TFTs exhibited a p-type behavior with a field-effect mobility of 0.54 cm2.V-1.s-1, an on/off ratio of around 44, threshold voltage equaling-0.62 V and a sub threshold swing of 1.64 V/dec. These values were obtained at a low operating voltage of-2V. The advantages of using STO as a gate dielectric relative to ATO are discussed.

Sign in / Sign up

Export Citation Format

Share Document