scholarly journals Atomic layer deposition of vanadium oxide films for crystalline silicon solar cells

2021 ◽  
Author(s):  
Eloi Ros Costals ◽  
Gerard Masmitjà ◽  
Estefania Rosa Almache ◽  
Benjamin andres Pusay ◽  
Kunal Tiwari ◽  
...  

Transition Metal Oxides (TMOs) are promising materials to develop selective contacts on high-efficiency crystalline silicon solar cells. Nevertheless, the standard deposition technique used for TMOs is thermal evaporation, which could...

2016 ◽  
Vol 6 (14) ◽  
pp. 1600241 ◽  
Author(s):  
James Bullock ◽  
Peiting Zheng ◽  
Quentin Jeangros ◽  
Mahmut Tosun ◽  
Mark Hettick ◽  
...  

2017 ◽  
Vol 7 (12) ◽  
pp. 1602606 ◽  
Author(s):  
Thomas G. Allen ◽  
James Bullock ◽  
Quentin Jeangros ◽  
Christian Samundsett ◽  
Yimao Wan ◽  
...  

2016 ◽  
Vol 255 ◽  
pp. 344-347 ◽  
Author(s):  
Michael Haslinger ◽  
M. Soha ◽  
S. Robert ◽  
M. Claes ◽  
Paul W. Mertens ◽  
...  

Advanced concepts for photovoltaic silicon solar cells, especially high-efficiency n-type solar cells, requires appropriate wet cleaning treatment in order to remove metallic contamination prior to high temperature processes like diffusion and passivation [1]. The cost of the cleaning process should be as low as possible that requires an optimized usage of the chemicals by increasing process tank lifetimes and developing dedicated feed and bleed recipes. The just clean enough concept has been developed to fulfil the needs of PV industry to minimize the consumption of chemicals. When the dominant contamination metal is identified in quality and quantity, a dedicated wet chemical cleaning process can be applied to remove the metal concentration from the semiconductor surface under a specified limit with the minimum volume on cleaning solution. The paper describes how to optimize a dedicated wet cleaning process for prominent metal impurities like Fe, Cu, Cr, Ti, Co and Zn. For each metal an exchange volume is determined to develop a feed and bleed recipe. The accumulation of the metal impurities in the process tank is calculated and process tank lifetimes are predicted.


2011 ◽  
Vol 1353 ◽  
Author(s):  
Ad Vermeer ◽  
Roger Gortzen ◽  
P. Poodt ◽  
F. Roozeboom

ABSTRACTAtomic Layer Deposition (ALD) is a gas phase deposition technique for depositing very high quality thin films with an unsurpassed conformality. The main drawback of ALD however is the very low deposition rate (~ 1 nm/min). Recently, record deposition rates for alumina of up to 1 nm/s were reached using spatial ALD, while maintaining the typical assets regarding film quality as obtained by conventional, slow ALD [1]. This allows for ALD at high throughput numbers.One interesting application is passivation of crystalline silicon solar cells. Applying a thin alumina layer is reported to increase solar cell efficiency and enables the use of thinner wafers, thus reducing the main cost factor [2]. In this paper we report on the latest progress made by SoLayTec that delivered a working prototype of a system realizing full area single sided deposition of alumina on 156 x 156 mm2, mono- and multi crystalline silicon wafers for solar cell applications. The alumina layers showed excellent passivation. Based on this concept, a high-throughput ALD deposition tool is being developed targeting throughput numbers of up to 3000 wafers/hr. Finally, we report on the process of commercializing this technology.


Sign in / Sign up

Export Citation Format

Share Document