Retarding Ostwald ripening through Gibbs adsorption and interfacial complexions leads to high-performance SnTe thermoelectrics

2021 ◽  
Author(s):  
Decheng An ◽  
Jiangjing Wang ◽  
Jie Zhang ◽  
Xin Zhai ◽  
Zepeng Kang ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
High Performance ◽  
Ostwald Ripening ◽  
Temperature Gradients ◽  
Thermoelectric Performance ◽  
Routine Method ◽  
Long Duration

Nanoprecipitation is a routine method to decrease the thermal conductivity for advancing thermoelectric performance. However, the coarsening/Ostwald ripening of precipitates under temperature gradients in long-duration service deteriorates the efficacy of...

High-performance electron-doped GeMnTe2: hierarchical structure and low thermal conductivity

2019 ◽  
Vol 7 (48) ◽  
pp. 27361-27366 ◽  
Author(s):  
Jinfeng Dong ◽  
Jun Pei ◽  
Hua-Lu Zhuang ◽  
Haihua Hu ◽  
Bowen Cai ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Hierarchical Structure ◽  
High Performance ◽  
Thermoelectric Performance ◽  
Low Thermal Conductivity

All scale hierarchical structure induced low thermal conductivity promises high thermoelectric performance of electron doped GeMnTe2.

scholarly journals Highly Textured N-Type SnSe Polycrystals with Enhanced Thermoelectric Performance

Research ◽  
2019 ◽  
Vol 2019 ◽  
pp. 1-10 ◽  
Author(s):  
Peng-Peng Shang ◽  
Jinfeng Dong ◽  
Jun Pei ◽  
Fu-Hua Sun ◽  
Yu Pan ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Transport Properties ◽  
Electrical Transport ◽  
High Performance ◽  
Waste Heat ◽  
Thermoelectric Performance ◽  
Electrical Transport Properties ◽  
Anisotropic Thermal Conductivity ◽  
Out Of Plane ◽  
Thermoelectric Transport Properties

Thermoelectric materials, which directly convert heat into electricity based on the Seebeck effects, have long been investigated for use in semiconductor refrigeration or waste heat recovery. Among them, SnSe has attracted significant attention due to its promising performance in both p-type and n-type crystals; in particular, a higher out-of-plane ZT value could be achieved in n-type SnSe due to its 3D charge and 2D phonon transports. In this work, the thermoelectric transport properties of n-type polycrystalline SnSe were investigated with an emphasis on the out-of-plane transport through producing textural microstructure. The textures were fabricated using mechanical alloying and repeated spark plasma sintering (SPS), as a kind of hot pressing, aimed at producing strong anisotropic transports in n-type polycrystalline SnSe as that in crystalline SnSe. Results show that the lowest thermal conductivity of 0.36 Wm-1 K-1 was obtained at 783 K in perpendicular to texture direction. Interestingly, the electrical transport properties are less anisotropic and even nearly isotropic, and the power factors reach 681.3 μWm-1 K-2 at 783 K along both parallel and perpendicular directions. The combination of large isotropic power factor and low anisotropic thermal conductivity leads to a maximum ZT of 1.5 at 783 K. The high performance elucidates the outstanding electrical and thermal transport behaviors in n-type polycrystalline SnSe, and a higher thermoelectric performance can be expected with future optimizing texture in n-type polycrystalline SnSe.

scholarly journals Te Nanoneedles Induced Entanglement and Thermoelectric Improvement of SnSe

Materials ◽  
2020 ◽  
Vol 13 (11) ◽  
pp. 2523 ◽  
Author(s):  
Hyun Ju ◽  
Myeongjin Kim ◽  
Jinglei Yang ◽  
Jooheon Kim
Keyword(s):  
Thermal Conductivity ◽  
High Performance ◽  
Phonon Scattering ◽  
Reaction Times ◽  
Base Material ◽  
Thermoelectric Performance ◽  
Optimum Conditions ◽  
Tin Selenide ◽  
Research Fields ◽  
Widespread Interest

Chalcogenide-based materials have attracted widespread interest in high-performance thermoelectric research fields. A strategy for the application of two types of chalcogenide for improved thermoelectric performance is described herein. Tin selenide (SnSe) is used as a base material, and Te nanoneedles are crystallized in the SnSe, resulting in the generation of a composite structure of SnSe with Te nanoneedles. The thermoelectric properties with various reaction times are investigated to reveal the optimum conditions for enhanced thermoelectric performance. A reaction time of 4 h at 450 K generated a composite Te nanoneedles/SnSe sample with the maximum ZT value, 3.2 times larger than that of the pristine SnSe. This result is attributed to both the reduced thermal conductivity from the effective phonon scattering of heterointerfaces and the improved electrical conductivity value due to the introduction of Te nanoparticles. This strategy suggests an approach to generating high-performance practical thermoelectric materials.

Tuning SnSe/SnS hetero-interfaces to enhance thermoelectric performance

2018 ◽  
Vol 11 (04) ◽  
pp. 1850069 ◽  
Author(s):  
Xuerui Liu ◽  
Shuankui Li ◽  
Tinyang Liu ◽  
Weiming Zhu ◽  
Rui Wang ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Thermoelectric Materials ◽  
High Performance ◽  
Multiple Scales ◽  
Phonon Transport ◽  
Thermoelectric Performance ◽  
Energy Filtering ◽  
Promising Strategy ◽  
Filtering Effect ◽  
Heterogeneous Nanostructure

With the development of nanotechnology, thermoelectric materials with complex heterogeneous nanostructure offer a promising approach to improve the thermoelectric performance. In this work, SnSe/SnS hetero-nanosheet was tuned by the epitaxial growth of SnSe on the few layers of SnS nanosheets. The heterojunction interface can optimize the carrier/phonon transport behavior by energy filtering effect and scattering the phonon in multiple scales. Compared with pristine SnSe, the power factor of SnSe/SnS hetero-nanosheet increases from 2.2[Formula: see text][Formula: see text]V/cmK2 to 3.21[Formula: see text][Formula: see text]V/cmK2 at 773[Formula: see text]K, whereas the thermal conductivity decreases significantly from 0.65[Formula: see text]W[Formula: see text][Formula: see text][Formula: see text]m[Formula: see text] to 0.48[Formula: see text]W[Formula: see text][Formula: see text][Formula: see text]m[Formula: see text] at 773[Formula: see text]K. The maximum ZT of 0.5 is obtained at 773[Formula: see text]K in the SnSe/SnS hetero-nanosheets, which is 89% higher than pristine SnSe. This approach is proved to be a promising strategy to design high performance thermoelectric materials.

Synergetic optimization of electronic and thermal transport for high-performance thermoelectric GeSe–AgSbTe2 alloy

2018 ◽  
Vol 6 (18) ◽  
pp. 8215-8220 ◽  
Author(s):  
Mingtao Yan ◽  
Xiaojian Tan ◽  
Zhiwei Huang ◽  
Guoqiang Liu ◽  
Peng Jiang ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Carrier Concentration ◽  
Thermal Transport ◽  
High Performance ◽  
Thermoelectric Performance

Via alloying with AgSbTe2, the thermoelectric performance of GeSe is dramatically improved by carrier concentration optimization and thermal conductivity suppression.

Three-dimensional hybridized carbon networks for high performance thermoelectric applications

RSC Advances ◽  
2014 ◽  
Vol 4 (80) ◽  
pp. 42234-42239
Author(s):  
Xiaojian Tan ◽  
Hezhu Shao ◽  
Yanwei Wen ◽  
Huijun Liu ◽  
Guoqiang Liu
Keyword(s):  
Thermal Conductivity ◽  
Electronic Transport ◽  
High Performance ◽  
Three Dimensional ◽  
Thermoelectric Performance ◽  
Carbon Networks

Our study revealed that thermoelectric performance of carbon networks are improved by reducing thermal conductivity with electronic transport less affected.

OLIN C197

Alloy Digest ◽  
1999 ◽  
Vol 48 (1) ◽  
Keyword(s):  
Thermal Conductivity ◽  
Wear Resistance ◽  
Physical Properties ◽  
Tensile Properties ◽  
High Performance ◽  
Corrosion And Wear ◽  
Contact Forces ◽  
High Current ◽  
Lower Strength ◽  
Current Carrying Capability

Abstract Olin C197 is a second-generation high performance alloy developed by Olin Brass. It has a strength and bend formability similar to C194 (see Alloy Digest Cu-360, September 1978), but with 25% higher electrical and thermal conductivity. High conductivity allows C197 to replace brasses and bronzes in applications where high current-carrying capability is required. Also, the strength of C197 provides higher contact forces when substituted for many lower strength coppers. This datasheet provides information on composition, physical properties, hardness, elasticity, and tensile properties. It also includes information on corrosion and wear resistance as well as forming and joining. Filing Code: CU-627. Producer or source: Olin Brass.

Study of Transcrystallization in Polymer Composites

1989 ◽  
Vol 170 ◽  
Author(s):  
Benjamin S. Hsiao ◽  
J. H. Eric
Keyword(s):  
Thermal Conductivity ◽  
Free Energy ◽  
Carbon Fiber ◽  
Plasma Treatment ◽  
Polymer Composites ◽  
High Performance ◽  
Interfacial Strength ◽  
Fiber Surface ◽  
Semicrystalline Polymers ◽  
First Case

AbstractTranscrystallization of semicrystalline polymers, such as PEEK, PEKK and PPS, in high performance composites has been investigated. It is found that PPDT aramid fiber and pitch-based carbon fiber induce a transcrystalline interphase in all three polymers, whereas in PAN-based carbon fiber and glass fiber systems, transcrystallization occurs only under specific circumstances. Epitaxy is used to explain the surface-induced transcrystalline interphase in the first case. In the latter case, transcrystallization is probably not due to epitaxy, but may be attributed to the thermal conductivity mismatch. Plasma treatment on the fiber surface showed a negligible effect on inducing transcrystallization, implying that surface-free energy was not important. A microdebonding test was adopted to evaluate the interfacial strength between the fiber and matrix. Our preliminary results did not reveal any effect on the fiber/matrix interfacial strength of transcrystallinity.

Enhanced thermoelectric performance of band structure engineered GeSe1−xTex alloys

2021 ◽  
Vol 5 (6) ◽  
pp. 1734-1746
Author(s):  
D. Sidharth ◽  
A. S. Alagar Nedunchezhian ◽  
R. Akilan ◽  
Anup Srivastava ◽  
Bhuvanesh Srinivasan ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Band Structure ◽  
Power Factor ◽  
Thermoelectric Performance

The power factor of GeSe enhanced and thermal conductivity decreased by Te substitution and thereby, GeSe0.80Te0.20 exhibits high ZT.

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