Synergetic optimization of electronic and thermal transport for high-performance thermoelectric GeSe–AgSbTe2 alloy

2018 ◽  
Vol 6 (18) ◽  
pp. 8215-8220 ◽  
Author(s):  
Mingtao Yan ◽  
Xiaojian Tan ◽  
Zhiwei Huang ◽  
Guoqiang Liu ◽  
Peng Jiang ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Carrier Concentration ◽  
Thermal Transport ◽  
High Performance ◽  
Thermoelectric Performance

Via alloying with AgSbTe2, the thermoelectric performance of GeSe is dramatically improved by carrier concentration optimization and thermal conductivity suppression.

scholarly journals Decoupling electron and phonon transport in single-nanowire hybrid materials for high-performance thermoelectrics

2021 ◽  
Vol 7 (20) ◽  
pp. eabe6000
Author(s):  
Lin Yang ◽  
Madeleine P. Gordon ◽  
Akanksha K. Menon ◽  
Alexandra Bruefach ◽  
Kyle Haas ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Thermal Transport ◽  
Electrical Transport ◽  
High Performance ◽  
Figure Of Merit ◽  
Phonon Transport ◽  
Core Shell ◽  
Nanowire Diameter ◽  
High Performing ◽  
Polycrystalline Thin Films

Organic-inorganic hybrids have recently emerged as a class of high-performing thermoelectric materials that are lightweight and mechanically flexible. However, the fundamental electrical and thermal transport in these materials has remained elusive due to the heterogeneity of bulk, polycrystalline, thin films reported thus far. Here, we systematically investigate a model hybrid comprising a single core/shell nanowire of Te-PEDOT:PSS. We show that as the nanowire diameter is reduced, the electrical conductivity increases and the thermal conductivity decreases, while the Seebeck coefficient remains nearly constant—this collectively results in a figure of merit, ZT, of 0.54 at 400 K. The origin of the decoupling of charge and heat transport lies in the fact that electrical transport occurs through the organic shell, while thermal transport is driven by the inorganic core. This study establishes design principles for high-performing thermoelectrics that leverage the unique interactions occurring at the interfaces of hybrid nanowires.

Constructing Three-dimensional Nano-crystalline Diamond Network within Polymer Composites for Enhanced Thermal Conductivity

Nanoscale ◽  
2021 ◽  
Author(s):  
Shaoyang Xiong ◽  
Yue Qin ◽  
Linhong Li ◽  
Guoyong Yang ◽  
Maohua Li ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Polymer Composites ◽  
Thermal Performance ◽  
Thermal Transport ◽  
High Performance ◽  
Rapid Development ◽  
Electronic Devices ◽  
Three Dimensional ◽  
Nano Crystalline ◽  
Enhanced Thermal Conductivity

In order to meet the requirement of thermal performance with the rapid development of high-performance electronic devices, constructing a three-dimensional thermal transport skeleton is an effective method for enhancing thermal...

Synergistic optimization of carrier transport and thermal conductivity in Sn-doped Cu2Te

2018 ◽  
Vol 6 (39) ◽  
pp. 18928-18937 ◽  
Author(s):  
Yuchong Qiu ◽  
Ying Liu ◽  
Jinwen Ye ◽  
Jun Li ◽  
Lixian Lian
Keyword(s):  
Thermal Conductivity ◽  
Fermi Level ◽  
Carrier Concentration ◽  
Power Factor ◽  
Carrier Transport ◽  
Lone Pair ◽  
Thermoelectric Performance ◽  
Degenerate Semiconductors ◽  
Lone Pair Electrons

Doping Sn into the Cu2Te lattice can synergistically enhance the power factor and decrease thermal conductivity, leading to remarkably optimized zTs. The lone pair electrons from the 5s orbital of Sn can increase the DOS near the Fermi level of Cu2Te to promote PF and reduce κe by decreasing the carrier concentration. This study explores a scalable strategy to optimize the thermoelectric performance for intrinsically highly degenerate semiconductors.

scholarly journals Efficient interlayer charge release for high-performance layered thermoelectrics

2020 ◽  
Author(s):  
Hao Zhu ◽  
Zhou Li ◽  
Chenxi Zhao ◽  
Xingxing Li ◽  
Jinlong Yang ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Electrical Conductivity ◽  
Seebeck Coefficient ◽  
Carrier Concentration ◽  
High Performance ◽  
Lattice Thermal Conductivity ◽  
Transport Barrier ◽  
High Seebeck Coefficient ◽  
Valence Bands ◽  
Increase Carrier Concentration

Abstract Many layered superlattice materials intrinsically possess large Seebeck coefficient and low lattice thermal conductivity, but poor electrical conductivity because of the interlayer transport barrier for charges, which has become a stumbling block for achieving high thermoelectric performance. Herein, taking BiCuSeO superlattice as an example, it is demonstrated that efficient interlayer charge release can increase carrier concentration, thereby activating multiple Fermi pockets through Bi/Cu dual vacancies and Pb codoping. Experimental results reveal that the extrinsic charges, which are introduced by Pb and initially trapped in the charge-reservoir [Bi2O2]2+ sublayers, are effectively released into [Cu2Se2]2− sublayers via the channels bridged by Bi/Cu dual vacancies. This efficient interlayer charge release endows dual-vacancy- and Pb-codoped BiCuSeO with increased carrier concentration and electrical conductivity. Moreover, with increasing carrier concentration, the Fermi level is pushed down, activating multiple converged valence bands, which helps to maintain a relatively high Seebeck coefficient and yield an enhanced power factor. As a result, a high ZT value of ∼1.4 is achieved at 823 K in codoped Bi0.90Pb0.06Cu0.96SeO, which is superior to that of pristine BiCuSeO and solely doped samples. The present findings provide prospective insights into the exploration of high-performance thermoelectric materials and the underlying transport physics.

Extraordinary role of Zn in enhancing thermoelectric performance of Ga-doped n-type PbTe

2022 ◽  
Author(s):  
Zhong-zhen Luo ◽  
Songting Cai ◽  
Shiqiang Hao ◽  
Trevor Bailey ◽  
Yubo Luo ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Carrier Concentration ◽  
Lattice Thermal Conductivity ◽  
Thermoelectric Performance ◽  
Phonon Coupling ◽  
Electron Phonon Coupling ◽  
Ga Doping ◽  
Role Of Zn

Although Ga doping can weaken the electron phonon coupling of n-type PbTe, Ga-doped PbTe has a relatively low carrier concentration (n) and high lattice thermal conductivity (κlat), resulting in a...

Retarding Ostwald ripening through Gibbs adsorption and interfacial complexions leads to high-performance SnTe thermoelectrics

2021 ◽  
Author(s):  
Decheng An ◽  
Jiangjing Wang ◽  
Jie Zhang ◽  
Xin Zhai ◽  
Zepeng Kang ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
High Performance ◽  
Ostwald Ripening ◽  
Temperature Gradients ◽  
Thermoelectric Performance ◽  
Routine Method ◽  
Long Duration

Nanoprecipitation is a routine method to decrease the thermal conductivity for advancing thermoelectric performance. However, the coarsening/Ostwald ripening of precipitates under temperature gradients in long-duration service deteriorates the efficacy of...

Theoretical Analysis of Thermal Conductivity in Amorphous Inter-layer Dielectrics

2006 ◽  
Vol 914 ◽  
Author(s):  
Manu Shamsa ◽  
Patrick Morrow ◽  
Shriram Ramanathan
Keyword(s):  
Experimental Data ◽  
Thermal Conductivity ◽  
Thermal Transport ◽  
High Frequency ◽  
Thermal Conduction ◽  
High Performance ◽  
Amorphous Materials ◽  
Disordered Materials ◽  
Semiconductor Processing ◽  
Hopping Model

AbstractUnderstanding thermal conduction in interlayer dielectrics (ILDs) is important for the optimal design of interconnect layers in backend semiconductor processing for future high-performance nano-scale devices. Reduced thermal conductivity of porous ILDs for example can adversely affect the temperature rise in the embedded metal lines leading to un-desirable reliability issues and design constraints. In this paper, we report results of our theoretical and experimental investigation of thermal transport in amorphous and porous dielectrics. A phonon-hopping model has been adapted to calculate the thermal conductivity in disordered materials. The value of hopping integral has been calculated by comparing the modeling results with experimental data for various amorphous and porous materials. The model shows reasonable agreement with experimental data for various amorphous materials including SiO2 and other glasses over a wide temperature range from 50K – 300K. The model suggests that the hopping of localized high frequency phonons is a dominant thermal transport mechanism in such material systems.

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