Pulsed heating atomic layer deposition (PH-ALD) for epitaxial growth of zinc oxide thin films on c-plane sapphire
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An in situ pulsed heating atomic layer deposition (PH-ALD) technique is used to grow heteroepitaxial ZnO thin films on c-plane sapphire from temperature-sensitive metalorganic precursors. During metalorganic precursor delivery, the...
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2021 ◽
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