Epitaxial Growth ofm-Plane ZnO Thin Films on (101̅0) Sapphire Substrate by Atomic Layer Deposition with Interrupted Flow

2010 ◽  
Vol 10 (4) ◽  
pp. 1460-1463 ◽  
Author(s):  
Ching-Shun Ku ◽  
Hsin-Yi Lee ◽  
Jheng-Ming Huang ◽  
Chih-Ming Lin
2021 ◽  
Author(s):  
Brandon Deane Piercy ◽  
Jamie Pearce Wooding ◽  
Shawn Gregory ◽  
Mark D. Losego

An in situ pulsed heating atomic layer deposition (PH-ALD) technique is used to grow heteroepitaxial ZnO thin films on c-plane sapphire from temperature-sensitive metalorganic precursors. During metalorganic precursor delivery, the...


2021 ◽  
Vol 39 (3) ◽  
pp. 032401
Author(s):  
Maximilian Kolhep ◽  
Cheng Sun ◽  
Jürgen Bläsing ◽  
Björn Christian ◽  
Margit Zacharias

2021 ◽  
Vol 27 (S1) ◽  
pp. 2660-2662
Author(s):  
David Elam ◽  
Eduardo Ortega ◽  
Andrey Chabanov ◽  
Arturo Ponce

2001 ◽  
Vol 65 (1-4) ◽  
pp. 125-132 ◽  
Author(s):  
Y. Yamamoto ◽  
K. Saito ◽  
K. Takahashi ◽  
M. Konagai

2006 ◽  
Vol 510-511 ◽  
pp. 670-673 ◽  
Author(s):  
Chong Mu Lee ◽  
Yeon Kyu Park ◽  
Anna Park ◽  
Choong Mo Kim

This paper investigated the effects of annealing atmosphere on the carrier concentration, carrier mobility, electrical resistivity, and PL characteristics as well as the crystallinity of ZnO films deposited on sapphire substrates by atomic layer deposition (ALD). X-ray diffraction (XRD) and photoluminescence (PL) analyses, and Hall measurement were performed to investigate the crystallinity, optical properties and electrical properties of the ZnO thin films, respectively. According to the XRD analysis results, the crystallinity of the ZnO film annealed in an oxygen atmosphere is better than that of the ZnO film annealed in a nitrogen atmosphere. It was found that annealing undoped ZnO films grown by ALD at a high temperature above 600°C improves the crystallinity and enhances UV emission.


2008 ◽  
Vol 14 (4) ◽  
pp. 1053-1057 ◽  
Author(s):  
Hsing-Chao Chen ◽  
Miin-Jang Chen ◽  
Mong-Kai Wu ◽  
Yung-Chen Cheng ◽  
Feng-Yu Tsai

2018 ◽  
Vol 39 (3) ◽  
pp. 033004 ◽  
Author(s):  
Li Chen ◽  
Xinliang Chen ◽  
Zhongxin Zhou ◽  
Sheng Guo ◽  
Ying Zhao ◽  
...  

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