Amorphous AlN films grown by ALD from trimethylaluminum and monomethylhydrazine

2021 ◽  
Author(s):  
Roman G. Parkhomenko ◽  
Oreste De Luca ◽  
Łukasz Kołodziejczyk ◽  
Evgeny Modin ◽  
Petra Rudolf ◽  
...  

The great interest in aluminium nitride thin films has been attributed to their excellent dielectric, thermal and mechanical properties. Here we present the results on amorphous AlN films obtained by...

2013 ◽  
Vol 538 ◽  
pp. 316-319 ◽  
Author(s):  
Tamara Petkova ◽  
Vania Ilcheva ◽  
P. Ilchev ◽  
P. Petkov

The great interest toward chalcogenide materials is due to the simple technology of preparation in bulk forms and thin films; good thermal and mechanical properties; transparency and photo-sensibility in the IR spectral range. These advantages determine the possibilities for potential application of these materials like optical storage media, memory devices, optical elements (lenses, waveguides, gratings, etc). The idea of present study is to trace the impact of gallium or indium as metal introduction on the behaviors of the glasses from germanium - chalcogenide system.


2011 ◽  
Vol 44 (22) ◽  
pp. 9040-9045 ◽  
Author(s):  
Jessica M. Torres ◽  
Chengqing Wang ◽  
E. Bryan Coughlin ◽  
John P. Bishop ◽  
Richard A. Register ◽  
...  

2006 ◽  
Vol 91 (12) ◽  
pp. 3026-3032 ◽  
Author(s):  
A. Sionkowska ◽  
M. Wisniewski ◽  
J. Skopinska ◽  
G.F. Poggi ◽  
E. Marsano ◽  
...  

1998 ◽  
Vol 4 (S2) ◽  
pp. 624-625
Author(s):  
Z.R. Dai ◽  
S.R. Chegwidden ◽  
F.S. Ohuchi

GaSe, a member of the III-VI compound semiconductors, and its related compounds have recently gained an considerable attention because of their high non-linear optical coefficients in the infrared ranges, making them candidates for second harmonic generation (SHG) materials[l,2]. While the optical properties of those materials in bulk form are quite promising, poor thermal and mechanical properties preclude their easy applications. In thin film devices, the thermal and mechanical properties are dominated by those of the substrate, therefore, heteroepitaxially grown thin films of GaSe and related materials on substrates such as GaAs, Si and A12O3 should enable their application in device structures. Development of such new generation of materials, however, require fundamental knowledge about the surface and interface structure that play decisive roles in the thin film crystallinity and materials properties.


2019 ◽  
Vol 2 (2) ◽  
pp. 487-496 ◽  
Author(s):  
Alexandros El Sachat ◽  
Jean Spièce ◽  
Charalambos Evangeli ◽  
Alexander James Robson ◽  
Martin Kreuzer ◽  
...  

2002 ◽  
Vol 124 (2) ◽  
pp. 274-277 ◽  
Author(s):  
Martin Y. M. Chiang ◽  
Chwan K. Chiang ◽  
Wen-li Wu

A technique for determining the in-plane modulus and the coefficient of thermal expansion (CTE) of supported thin films has been developed. The modulus and CTE are calculated by solving two coupled equations that relate the curvature of film samples deposited on two different substrates to the thermal and mechanical properties of the constituents. In contrast with the conventional method used to calculate modulus and CTE, which involves differentiation of the thermal stress in the film, this new technique does not require the differentiation of the thermal stress, and can also provide the temperature-dependence of the in-plane CTE and elastic modulus of supported thin films. The data reduction scheme used for deducing CTE and elastic modulus is direct and reliable.


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