Influence of Chain Stiffness on Thermal and Mechanical Properties of Polymer Thin Films

2011 ◽  
Vol 44 (22) ◽  
pp. 9040-9045 ◽  
Author(s):  
Jessica M. Torres ◽  
Chengqing Wang ◽  
E. Bryan Coughlin ◽  
John P. Bishop ◽  
Richard A. Register ◽  
...  
2013 ◽  
Vol 538 ◽  
pp. 316-319 ◽  
Author(s):  
Tamara Petkova ◽  
Vania Ilcheva ◽  
P. Ilchev ◽  
P. Petkov

The great interest toward chalcogenide materials is due to the simple technology of preparation in bulk forms and thin films; good thermal and mechanical properties; transparency and photo-sensibility in the IR spectral range. These advantages determine the possibilities for potential application of these materials like optical storage media, memory devices, optical elements (lenses, waveguides, gratings, etc). The idea of present study is to trace the impact of gallium or indium as metal introduction on the behaviors of the glasses from germanium - chalcogenide system.


2006 ◽  
Vol 91 (12) ◽  
pp. 3026-3032 ◽  
Author(s):  
A. Sionkowska ◽  
M. Wisniewski ◽  
J. Skopinska ◽  
G.F. Poggi ◽  
E. Marsano ◽  
...  

1998 ◽  
Vol 4 (S2) ◽  
pp. 624-625
Author(s):  
Z.R. Dai ◽  
S.R. Chegwidden ◽  
F.S. Ohuchi

GaSe, a member of the III-VI compound semiconductors, and its related compounds have recently gained an considerable attention because of their high non-linear optical coefficients in the infrared ranges, making them candidates for second harmonic generation (SHG) materials[l,2]. While the optical properties of those materials in bulk form are quite promising, poor thermal and mechanical properties preclude their easy applications. In thin film devices, the thermal and mechanical properties are dominated by those of the substrate, therefore, heteroepitaxially grown thin films of GaSe and related materials on substrates such as GaAs, Si and A12O3 should enable their application in device structures. Development of such new generation of materials, however, require fundamental knowledge about the surface and interface structure that play decisive roles in the thin film crystallinity and materials properties.


2009 ◽  
Vol 55 (5(1)) ◽  
pp. 1780-1784
Author(s):  
Sang-Jin Cho ◽  
In-Seob Bae ◽  
Jin-Hyo Boo ◽  
Sungwoo Lee ◽  
Donggeun Jung

2013 ◽  
Vol 748 ◽  
pp. 165-169 ◽  
Author(s):  
M. Rahmah Siti ◽  
Anika Zafiah M. Rus ◽  
S. Nurulsaidatulsyida ◽  
D.A. Talib ◽  
T.M.Y.S. Tuan Ya

This study reports on the effect of UV-light on the mechanical properties of bio polymer thin films (BPF) doped with 10 % Titanium Dioxide (TiO2). Bio monomer was mixed with 4, 4-methylenebis (phenylisocyanate) (MDI) to produce neat BPF and TiO2 was added to form BPF doped with 10 % TiO2. The film samples were irradiated in UV Accelerated Weatherometer at 50 °C with different exposure time. Universal Testing Machine was used to measure the tensile strength and the fracture surfaces of the tensile specimens were observed by Scanning Electron Microscopy (SEM). The maximum tensile strength of UV irradiated neat BPF is lower than BPF doped with 10 % TiO2 of 3.5 MPa and 4.2 MPa respectively. Stress of neat BPF was decreased from 3.7 MPa to 3.2 MPa after 144 hours of UV exposure at 50 °C while BPF doped with 10 % TiO2 decrease from 4.7 to 3.6 MPa. The Modulus Young of neat BPF is lower than BPF doped with 10 % TiO2 which are 0.32 GPa and 0.33 GPa respectively. The cumulative strain percentage irradiated neat BPF is lower than BPF doped with 10 % TiO2 with 98.7 % and 113.7 % respectively. Unexposed UV light of neat BPF and BPF doped with 10 % TiO2 were observed by SEM shows smooth fracture and brittle fracture respectively. Neat BPF and BPF doped with 10 % TiO2 exposed to UV light show higher ductility property as compared to unexposed BPF. The higher the exposure time of BPF to UV light, revealed systematic increment of tensile strength due to increased crosslink between isocyanate and hydroxyl group.


2019 ◽  
Vol 2 (2) ◽  
pp. 487-496 ◽  
Author(s):  
Alexandros El Sachat ◽  
Jean Spièce ◽  
Charalambos Evangeli ◽  
Alexander James Robson ◽  
Martin Kreuzer ◽  
...  

2021 ◽  
Author(s):  
Roman G. Parkhomenko ◽  
Oreste De Luca ◽  
Łukasz Kołodziejczyk ◽  
Evgeny Modin ◽  
Petra Rudolf ◽  
...  

The great interest in aluminium nitride thin films has been attributed to their excellent dielectric, thermal and mechanical properties. Here we present the results on amorphous AlN films obtained by...


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