Highly sensitive ratiometric optical cryothermometer in a new broadband emitting trivalent bismuth singly activated Ba2ZnSc(BO3)3 microcrystal

2021 ◽  
Author(s):  
Shixiang Huang ◽  
Feng Zhang ◽  
Zhangyue Wu ◽  
Ying Fu ◽  
Chao Li

Motived by the growing demand for noncontact temperature sensing in cryogenic environments, the development of a high performance low temperature optical thermometry is more and more urgent. Herein, we demonstrate...

2019 ◽  
Vol 289 ◽  
pp. 94-99
Author(s):  
Shahino Mah Abdullah ◽  
Saqib Rafique ◽  
Khairus Syifa Hamdan ◽  
Nur Adilah Roslan ◽  
Lijie Li ◽  
...  

2017 ◽  
Vol 5 (5) ◽  
pp. 1074-1082 ◽  
Author(s):  
S. Senapati ◽  
K. K. Nanda

Red emitting Eu:ZnO nanorods for highly sensitive optical ratiometric temperature sensing by following the fluorescence intensity ratio technique.


RSC Advances ◽  
2021 ◽  
Vol 11 (49) ◽  
pp. 30926-30936
Author(s):  
Kamel Saidi ◽  
Wajdi Chaabani ◽  
Mohamed Dammak

Novel orthophosphate LiZnPO4:Yb3+–Er3+/Ho3+ with tunable luminescence have been synthesized via sol–gel/Pechini method for optical thermometry.


Proceedings ◽  
2020 ◽  
Vol 65 (1) ◽  
pp. 25
Author(s):  
Antonio Garrido Marijuan ◽  
Roberto Garay ◽  
Mikel Lumbreras ◽  
Víctor Sánchez ◽  
Olga Macias ◽  
...  

District heating networks deliver around 13% of the heating energy in the EU, being considered as a key element of the progressive decarbonization of Europe. The H2020 REnewable Low TEmperature District project (RELaTED) seeks to contribute to the energy decarbonization of these infrastructures through the development and demonstration of the following concepts: reduction in network temperature down to 50 °C, integration of renewable energies and waste heat sources with a novel substation concept, and improvement on building-integrated solar thermal systems. The coupling of renewable thermal sources with ultra-low temperature district heating (DH) allows for a bidirectional energy flow, using the DH as both thermal storage in periods of production surplus and a back-up heating source during consumption peaks. The ultra-low temperature enables the integration of a wide range of energy sources such as waste heat from industry. Furthermore, RELaTED also develops concepts concerning district heating-connected reversible heat pump systems that allow to reach adequate thermal levels for domestic hot water as well as the use of the network for district cooling with high performance. These developments will be demonstrated in four locations: Estonia, Serbia, Denmark, and Spain.


Solar RRL ◽  
2021 ◽  
pp. 2100108
Author(s):  
Shih-Chi Yang ◽  
Jordi Sastre ◽  
Maximilian Krause ◽  
Xiaoxiao Sun ◽  
Ramis Hertwig ◽  
...  

2021 ◽  
Vol 9 (6) ◽  
pp. 1880-1887
Author(s):  
Xia Sun ◽  
Shaoshuai He ◽  
Mengmeng Yao ◽  
Xiaojun Wu ◽  
Haitao Zhang ◽  
...  

Fully-physically crosslinked hydrogels with strain sensitivity and anti-freezing properties for wireless sensing and low temperature sensing were prepared.


2021 ◽  
Vol 13 (1) ◽  
Author(s):  
Muhammad Naqi ◽  
Kyung Hwan Choi ◽  
Hocheon Yoo ◽  
Sudong Chae ◽  
Bum Jun Kim ◽  
...  

AbstractLow-temperature-processed semiconductors are an emerging need for next-generation scalable electronics, and these semiconductors need to feature large-area fabrication, solution processability, high electrical performance, and wide spectral optical absorption properties. Although various strategies of low-temperature-processed n-type semiconductors have been achieved, the development of high-performance p-type semiconductors at low temperature is still limited. Here, we report a unique low-temperature-processed method to synthesize tellurium nanowire networks (Te-nanonets) over a scalable area for the fabrication of high-performance large-area p-type field-effect transistors (FETs) with uniform and stable electrical and optical properties. Maximum mobility of 4.7 cm2/Vs, an on/off current ratio of 1 × 104, and a maximum transconductance of 2.18 µS are achieved. To further demonstrate the applicability of the proposed semiconductor, the electrical performance of a Te-nanonet-based transistor array of 42 devices is also measured, revealing stable and uniform results. Finally, to broaden the applicability of p-type Te-nanonet-based FETs, optical measurements are demonstrated over a wide spectral range, revealing an exceptionally uniform optical performance.


2021 ◽  
Vol 412 ◽  
pp. 127034
Author(s):  
Yang Yu ◽  
Zhuoya Ren ◽  
Qianqian Shang ◽  
Jiangang Han ◽  
Lei Li ◽  
...  

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