The Red Light Emission in 2D (C4SH3CH2NH3)2SnI4 and (C4OH7CH2NH3)2SnI4 Perovskites

2021 ◽  
Author(s):  
Mi Hee Jung
Keyword(s):  
Binding Energy ◽  
Quantum Confinement ◽  
Radiative Recombination ◽  
Light Emission ◽  
Red Light ◽  
Exciton Binding Energy ◽  
Two Dimensional ◽  
Large Exciton Binding Energy

Two dimensional (2D) perovskites have a large exciton binding energy due to the structure of the quantum confinement, which produces a faster radiative recombination, so it is a promising potential...

Nanocrystalline Silicon for Optoelectronic Applications

MRS Bulletin ◽  
1998 ◽  
Vol 23 (4) ◽  
pp. 33-38 ◽  
Author(s):  
Leonid Tsybeskov
Keyword(s):  
Binding Energy ◽  
Light Emission ◽  
Crystalline Silicon ◽  
Free Exciton ◽  
Nanocrystalline Silicon ◽  
Momentum Conservation ◽  
Exciton Binding Energy ◽  
Electron Hole ◽  
Energy Plus ◽  
Hole Recombination

Light emission in silicon has been intensively investigated since the 1950s when crystalline silicon (c-Si) was recognized as the dominant material in microelectronics. Silicon is an indirect-bandgap semiconductor and momentum conservation requires phonon assistance in radiative electron-hole recombination (Figure 1a, top left). Because phonons carry a momentum and an energy, the typical signature of phonon-assisted recombination is several peaks in the photoluminescence (PL) spectra at low temperature. These PL peaks are called “phonon replicas.” High-purity c-Si PL is caused by free-exciton self-annihilation with the exciton binding energy of ~11 meV. The TO-phonon contribution in conservation processes is most significant, and the main PL peak (~1.1 eV) is shifted from the bandgap value (~1.17 eV) by ~70 meV—that is, the exciton binding energy plus TO-phonon energy (Figure 1a).

scholarly journals Advances in quantum light emission from 2D materials

Nanophotonics ◽  
2019 ◽  
Vol 8 (11) ◽  
pp. 2017-2032 ◽  
Author(s):  
Chitraleema Chakraborty ◽  
Nick Vamivakas ◽  
Dirk Englund
Keyword(s):  
Optical Properties ◽  
Binding Energy ◽  
Momentum Space ◽  
Recent Progress ◽  
Light Emission ◽  
2D Materials ◽  
Two Dimensional ◽  
Theoretical Understanding ◽  
Practical Applications ◽  
Spin Properties

AbstractTwo-dimensional (2D) materials are being actively researched due to their exotic electronic and optical properties, including a layer-dependent bandgap, a strong exciton binding energy, and a direct optical access to electron valley index in momentum space. Recently, it was discovered that 2D materials with bandgaps could host quantum emitters with exceptional brightness, spectral tunability, and, in some cases, also spin properties. This review considers the recent progress in the experimental and theoretical understanding of these localized defect-like emitters in a variety of 2D materials as well as the future advantages and challenges on the path toward practical applications.

scholarly journals Generalized Scaling Law for Exciton Binding Energy in Two-Dimensional Materials

2020 ◽  
Vol 13 (6) ◽  
Author(s):  
S. Ahmad ◽  
M. Zubair ◽  
O. Jalil ◽  
M. Q. Mehmood ◽  
U. Younis ◽  
...  
Keyword(s):  
Binding Energy ◽  
Scaling Law ◽  
Exciton Binding Energy ◽  
Two Dimensional ◽  
Two Dimensional Materials

EXCITON CONFINEMENT IN SEMICONDUCTOR MULTIPLE QUANTUM WELLS

1990 ◽  
Vol 04 (15n16) ◽  
pp. 2345-2356
Author(s):  
Y. FU ◽  
K. A. CHAO
Keyword(s):  
Wave Function ◽  
Perturbation Theory ◽  
Binding Energy ◽  
Quantum Wells ◽  
Multiple Quantum Well ◽  
Three Dimensional ◽  
Exciton Binding Energy ◽  
Multiple Quantum ◽  
Two Dimensional ◽  
Barrier Width

Exciton binding energy in semiconductor multiple quantum well (MQW) systems is analyzed with both the variational method and the perturbation theory. The intrinsic deficiency of the use of the two-dimensional exciton envelop wave function is clearly demonstrated. Using a GaAs/Al x Ga 1−xAs MQW as an example to calculate the exciton binding energy with a variational three-dimensional trial envelop function, we found that in many realistic samples the spatial extension of an exciton covers a region of several lattice constant dA + dB, where dA is the barrier width and dB is the well width.

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