Decreasing Exciton Binding Energy in Two-Dimensional Halide Perovskites by Lead Vacancies

2019 ◽  
Vol 10 (14) ◽  
pp. 3820-3827 ◽  
Author(s):  
Yurui Gao ◽  
Mingliang Zhang ◽  
Xu Zhang ◽  
Gang Lu
Keyword(s):  
Binding Energy ◽  
Exciton Binding Energy ◽  
Two Dimensional ◽  
Halide Perovskites

Exciton Binding Energy and the Nature of Emissive States in Organometal Halide Perovskites

2015 ◽  
Vol 6 (15) ◽  
pp. 2969-2975 ◽  
Author(s):  
Kaibo Zheng ◽  
Qiushi Zhu ◽  
Mohamed Abdellah ◽  
Maria E. Messing ◽  
Wei Zhang ◽  
...  
Keyword(s):  
Binding Energy ◽  
Exciton Binding Energy ◽  
Halide Perovskites

scholarly journals Generalized Scaling Law for Exciton Binding Energy in Two-Dimensional Materials

2020 ◽  
Vol 13 (6) ◽  
Author(s):  
S. Ahmad ◽  
M. Zubair ◽  
O. Jalil ◽  
M. Q. Mehmood ◽  
U. Younis ◽  
...  
Keyword(s):  
Binding Energy ◽  
Scaling Law ◽  
Exciton Binding Energy ◽  
Two Dimensional ◽  
Two Dimensional Materials

EXCITON CONFINEMENT IN SEMICONDUCTOR MULTIPLE QUANTUM WELLS

1990 ◽  
Vol 04 (15n16) ◽  
pp. 2345-2356
Author(s):  
Y. FU ◽  
K. A. CHAO
Keyword(s):  
Wave Function ◽  
Perturbation Theory ◽  
Binding Energy ◽  
Quantum Wells ◽  
Multiple Quantum Well ◽  
Three Dimensional ◽  
Exciton Binding Energy ◽  
Multiple Quantum ◽  
Two Dimensional ◽  
Barrier Width

Exciton binding energy in semiconductor multiple quantum well (MQW) systems is analyzed with both the variational method and the perturbation theory. The intrinsic deficiency of the use of the two-dimensional exciton envelop wave function is clearly demonstrated. Using a GaAs/Al x Ga 1−xAs MQW as an example to calculate the exciton binding energy with a variational three-dimensional trial envelop function, we found that in many realistic samples the spatial extension of an exciton covers a region of several lattice constant dA + dB, where dA is the barrier width and dB is the well width.

scholarly journals Overcoming the exciton binding energy in two-dimensional perovskite nanoplatelets by attachment of conjugated organic chromophores

2020 ◽  
Vol 11 (1) ◽  
Author(s):  
María C. Gélvez-Rueda ◽  
Magnus B. Fridriksson ◽  
Rajeev K. Dubey ◽  
Wolter F. Jager ◽  
Ward van der Stam ◽  
...  
Keyword(s):  
Binding Energy ◽  
Exciton Binding Energy ◽  
Two Dimensional ◽  
Organic Chromophores

Absorption F-Sum Rule for the Exciton Binding Energy in Methylammonium Lead Halide Perovskites

2015 ◽  
Vol 6 (22) ◽  
pp. 4566-4572 ◽  
Author(s):  
Nicola Sestu ◽  
Michele Cadelano ◽  
Valerio Sarritzu ◽  
Feipeng Chen ◽  
Daniela Marongiu ◽  
...  
Keyword(s):  
Binding Energy ◽  
Exciton Binding Energy ◽  
Sum Rule ◽  
Halide Perovskites ◽  
Lead Halide

The Red Light Emission in 2D (C4SH3CH2NH3)2SnI4 and (C4OH7CH2NH3)2SnI4 Perovskites

2021 ◽  
Author(s):  
Mi Hee Jung
Keyword(s):  
Binding Energy ◽  
Quantum Confinement ◽  
Radiative Recombination ◽  
Light Emission ◽  
Red Light ◽  
Exciton Binding Energy ◽  
Two Dimensional ◽  
Large Exciton Binding Energy

Two dimensional (2D) perovskites have a large exciton binding energy due to the structure of the quantum confinement, which produces a faster radiative recombination, so it is a promising potential...

LOCALIZED WANNIER EXCITON IN DEFECT LAYER EMBEDDED BETWEEN TWO SEMI-INFINITE SUPERLATTICES

2010 ◽  
Vol 24 (18) ◽  
pp. 3501-3511
Author(s):  
MENG-DONG HE ◽  
LING-LING WANG ◽  
WEI-QING HUANG ◽  
BING-SOU ZOU ◽  
KE-QIU CHEN
Keyword(s):  
Binding Energy ◽  
Variational Approach ◽  
Exciton State ◽  
Defect Layer ◽  
Growth Direction ◽  
Exciton Binding Energy ◽  
Two Dimensional ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Peak Value

The characteristics of the localized Wannier exciton in defect layer (GaAs) embedded between two semi-infinite superlattices (GaAs/Al x Ga 1-x As ) are investigated theoretically using a variational approach. It can be clearly seen the exciton changes in character between three- and quasi-two-dimensional states from the variation of exciton binding energy, in-plane radius, and probability in the superlattices (SLs) growth direction. We find that the extensions of exciton in directions both parallel and perpendicular to the interface of SLs almost approach their minimums as the exciton binding energy reaches peak value at a certain defect width. Our results show that the binding energy of the ground exciton state is sensitive to Al concentration x in Al x Ga 1-x As and thicknesses of the constituent layers. The comparison between excitonic behavior in structural defect SLs and single quantum well is made.

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