Strain-induced enhancement in the electronic and thermal transport properties of Tin Sulphide bilayer

Author(s):  
Shagun Nag ◽  
Ranber Singh ◽  
Ranjan Kumar

The enhancement in the thermoelectric figure of merit (ZT) of a material is limited by the interplay of the electronic transport coefficients. Here we report the greatly enhanced thermoelectric performance...

Author(s):  
Tingdong Zhang ◽  
Shuping Deng ◽  
Xiaodie Zhao ◽  
Xuefeng Ruan ◽  
Ning Qi ◽  
...  

A high thermoelectric figure of merit ZT of 2.5 at 730 K is achieved in p-type Ge1−xSmxTe through synergetic optimization of electrical and thermal transport properties. Sm doping effectively suppresses...


Author(s):  
Enamul Haque

This article reports the extraordinary thermoelectric figure of merit (ZT) of NaBaBi: degenerate bands, instead of the valley degeneracy of Bi2Te3, highly non-parabolic bands, and low DOS near the Fermi level of NaBaBi lead to an extraordinary ZTisotropic ≈ 1.60 at 350 K.


2020 ◽  
Vol 22 (4) ◽  
pp. 2081-2086 ◽  
Author(s):  
Taiki Tanishita ◽  
Koichiro Suekuni ◽  
Hirotaka Nishiate ◽  
Chul-Ho Lee ◽  
Michitaka Ohtaki

Co-substitution of Ge and P for Sb in Cu3SbS4 famatinite boosted dimensionless thermoelectric figure of merit.


2003 ◽  
Vol 793 ◽  
Author(s):  
Y. Amagai ◽  
A. Yamamoto ◽  
C. H. Lee ◽  
H. Takazawa ◽  
T. Noguchi ◽  
...  

ABSTRACTWe report transport properties of polycrystalline TMGa3(TM = Fe and Ru) compounds in the temperature range 313K<T<973K. These compounds exhibit semiconductorlike behavior with relatively high Seebeck coefficient, electrical resistivity, and Hall carrier concentrations at room temperature in the range of 1017- 1018cm−3. Seebeck coefficient measurements reveal that FeGa3isn-type material, while the Seebeck coefficient of RuGa3changes signs rapidly from large positive values to large negative values around 450K. The thermal conductivity of these compounds is estimated to be 3.5Wm−1K−1at room temperature and decreased to 2.5Wm−1K−1for FeGa3and 2.0Wm−1K−1for RuGa3at high temperature. The resulting thermoelectric figure of merit,ZT, at 945K for RuGa3reaches 0.18.


RSC Advances ◽  
2016 ◽  
Vol 6 (115) ◽  
pp. 114825-114829 ◽  
Author(s):  
Tessera Alemneh Wubieneh ◽  
Cheng-Lung Chen ◽  
Pai Chun Wei ◽  
Szu-Yuan Chen ◽  
Yang-Yuan Chen

Ge doping enables to enhance the thermoelectric figure of merit of SnSe..


2019 ◽  
Vol 6 (6) ◽  
pp. 1475-1481 ◽  
Author(s):  
Kyu Hyoung Lee ◽  
Min-Wook Oh ◽  
Hyun-Sik Kim ◽  
Weon Ho Shin ◽  
Kimoon Lee ◽  
...  

An improved thermoelectric figure of merit (zT) of 0.14 at 795 K was obtained in 7% Si doped InSe due to the emergence of the flat band.


2020 ◽  
Vol 22 (26) ◽  
pp. 14621-14629 ◽  
Author(s):  
Suiting Ning ◽  
Shan Huang ◽  
Ziye Zhang ◽  
Renqi Zhang ◽  
Ning Qi ◽  
...  

The thermoelectric figure of merit (ZT) in LaPtBi shows an overall increase with increasing hydrostatic pressure.


2020 ◽  
Vol 4 (3) ◽  
pp. 875-880
Author(s):  
D. Li ◽  
J. H. Zhang ◽  
J. M. Li ◽  
J. Zhang ◽  
X. Y. Qin

Herein, a facile solution chemical route has been developed for synthesis of Ag2Se-based alloy nanocrystals and high thermoelectric figure of merit has been obtained.


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