scholarly journals Deciphering capacitance frequency technique for performance limiting defect state parameters in energy harvesting perovskites

2021 ◽  
Author(s):  
Vikas Nandal ◽  
Sumanshu Agarwal ◽  
Pradeep Nair
Keyword(s):  
Thin Film ◽  
Energy Harvesting ◽  
Performance Enhancement ◽  
Defect State ◽  
Trap States ◽  
Significant Research ◽  
Optoelectronics Devices

With emerging thin-film PIN-based optoelectronics devices, a significant research thrust is focused on the passivation of trap states for performance enhancement. Among various methods, the capacitance frequency technique (CFT) is...

Effective performance improvement of organic thin film transistors with multi-layer modifications

2020 ◽  
Vol 91 (3) ◽  
pp. 30201
Author(s):  
Hang Yu ◽  
Jianlin Zhou ◽  
Yuanyuan Hao ◽  
Yao Ni
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Performance Enhancement ◽  
Organic Thin Film Transistors ◽  
Electrical Performance ◽  
Hole Injection ◽  
Organic Thin Film ◽  
Effective Performance ◽  
Significant Performance ◽  
P Type

Organic thin film transistors (OTFTs) based on dioctylbenzothienobenzothiophene (C8BTBT) and copper (Cu) electrodes were fabricated. For improving the electrical performance of the original devices, the different modifications were attempted to insert in three different positions including semiconductor/electrode interface, semiconductor bulk inside and semiconductor/insulator interface. In detail, 4,4′,4′′-tris[3-methylpheny(phenyl)amino] triphenylamine (m-MTDATA) was applied between C8BTBTand Cu electrodes as hole injection layer (HIL). Moreover, the fluorinated copper phthalo-cyanine (F16CuPc) was inserted in C8BTBT/SiO2 interface to form F16CuPc/C8BTBT heterojunction or C8BTBT bulk to form C8BTBT/F16CuPc/C8BTBT sandwich configuration. Our experiment shows that, the sandwich structured OTFTs have a significant performance enhancement when appropriate thickness modification is chosen, comparing with original C8BTBT devices. Then, even the low work function metal Cu was applied, a normal p-type operate-mode C8BTBT-OTFT with mobility as high as 2.56 cm2/Vs has been fabricated.

A new charge pumping model considering bulk trap states in polysilicon thin film transistor

1998 ◽  
Vol 42 (11) ◽  
pp. 1897-1903 ◽  
Author(s):  
Kee-Jong Kim ◽  
Won-Kyu Park ◽  
Seong-Gyun Kim ◽  
Keong-Mun Lim ◽  
In-Gon Lim ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistor ◽  
Trap States ◽  
Charge Pumping

Cocktails of Paste Coatings for Performance Enhancement of CuInGaS2 Thin-Film Solar Cells

2013 ◽  
Vol 6 (2) ◽  
pp. 888-893 ◽  
Author(s):  
Hee Sang An ◽  
Yunae Cho ◽  
Se Jin Park ◽  
Hyo Sang Jeon ◽  
Yun Jeong Hwang ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Performance Enhancement ◽  
Thin Film Solar Cells

Performance enhancement of inverted type organic solar cells by using Eu doped TiO2 thin film

2017 ◽  
Vol 9 ◽  
pp. 64-69 ◽  
Author(s):  
Osman Örnek ◽  
Zühal Alpaslan Kösemen ◽  
Sadullah Öztürk ◽  
Betül Canımkurbey ◽  
Şaban Fındık ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Organic Solar Cells ◽  
Tio2 Thin Film ◽  
Performance Enhancement ◽  
Doped Tio2
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