scholarly journals Exploiting In Situ Redox and Diffusion of Molybdenum to Enable Thin-Film Circuitry for Low-Cost Wireless Energy Harvesting

2018 ◽  
Vol 29 (5) ◽  
pp. 1806002 ◽  
Author(s):  
Youngbae Son ◽  
Rebecca L. Peterson
Keyword(s):  
Thin Film ◽  
Energy Harvesting ◽  
Low Cost ◽  
Wireless Energy Harvesting ◽  
And Diffusion

scholarly journals In situ studies of lithium-ion diffusion in a lithium-rich thin film cathode by scanning probe microscopy techniques

2015 ◽  
Vol 17 (34) ◽  
pp. 22235-22242 ◽  
Author(s):  
Shan Yang ◽  
Binggong Yan ◽  
Tao Li ◽  
Jing Zhu ◽  
Li Lu ◽  
...  
Keyword(s):  
Thin Film ◽  
Diffusion Coefficient ◽  
Scanning Probe Microscopy ◽  
Lithium Ion ◽  
Scanning Probe ◽  
Ion Diffusion ◽  
Microscopy Techniques ◽  
And Diffusion ◽  
Lithium Ion Diffusion

Band-excitation Electrochemical Strain Microscopy (BE-ESM) imaging and diffusion coefficient mapping of Li-rich cathode film.

Growth of GaN on Lithium Gallate Substrates for Development of a GaN Thin Compliant Substrate

1997 ◽  
Vol 482 ◽  
Author(s):  
W. A. Doolittle ◽  
T. Kropewnicki ◽  
C. Carter-Coman ◽  
S. Stock ◽  
P. Kohl ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Cost ◽  
Alloy System ◽  
Attractive Alternative ◽  
Compliant Substrate ◽  
Out Of Plane ◽  
Magnitude Improvement ◽  
Microscopic Surface

AbstractThe GaN on LGO system is the near perfect template (due to extremely high etch selectivity) for developing a viable thin film/compliant GaN substrate. Herein, we report on our efforts to grow GaN on LGO, including improvement of the microscopic surface morphology using pre-growthpretreatments. We also report on the first transferred thin film GaN substrate grown on LGO, transferred off of LGO, and mounted on GaAs. With this approach, (InAl)GaN alloys can be grown on thin GaN films, implementing a truly “compliant” substrate for the nitride alloy system. In addition, the flexibility of bonding to low cost Si, metal or standard ceramic IC packages is an attractive alternative to SiC and HVPE GaN substrates for optimizing cost verses thermal conductivity concerns. We have demonstratedhigh quality growth of GaN on LGO. X-Ray rocking curves of 145 arc-seconds are obtained with only a 0.28 μm thick film. We present data on the out of plane crystalline quality of GaN/LGO material. Likewise, we show 2 orders of magnitude improvement in residual doping concentration and factors of 4 improvement in electron mobility as compared to the only previously reported electrical data. We show substantial vendor to vendor and intra-vendor LGO material quality variations. We have also quantified the desorption of Ga and Li from the surface of LGO at typical growth temperatures using in situ desorption mass spectroscopy and XPS.

Low temperature and high performance ZnSnO thin film transistors engineered by in-situ thermal manipulation

2022 ◽  
Author(s):  
Wengao Pan ◽  
Xiaoliang Zhou ◽  
Qingping Lin ◽  
Jie Chen ◽  
Lei Lu ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Thin Film Transistors ◽  
High Performance ◽  
Low Cost ◽  
High Mobility ◽  
Processing Temperature ◽  
Practical Application ◽  
Thermal Manipulation

Thin film transistors (TFT) with low cost, high mobility and low processing temperature are key enablers for practical application, which are always contradictory. In this work, we achieved high performance...

In situ growth of SnS absorbing layer by reactive sputtering for thin film solar cells

RSC Advances ◽  
2016 ◽  
Vol 6 (5) ◽  
pp. 4108-4115 ◽  
Author(s):  
Lianbo Zhao ◽  
Yunxiang Di ◽  
Chang Yan ◽  
Fangyang Liu ◽  
Zhu Cheng ◽  
...  
Keyword(s):  
Thin Film ◽  
Single Phase ◽  
Low Cost ◽  
Thin Film Solar Cells ◽  
In Situ Growth ◽  
Promising Candidate ◽  
Earth Abundant ◽  
Absorbing Layer ◽  
Material Preparation

The semiconductor SnS is a promising candidate for low cost earth-abundant photovoltaic absorbing layers and presents some interesting challenges in single phase material preparation.

In situ modification of low-cost Cu electrodes for high-performance low-voltage pentacene thin film transistors (TFTs)

2013 ◽  
Vol 14 (3) ◽  
pp. 775-781 ◽  
Author(s):  
Yaorong Su ◽  
Mingdong Wang ◽  
Fangyan Xie ◽  
Jian Chen ◽  
Weiguang Xie ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
High Performance ◽  
Low Voltage ◽  
Low Cost ◽  
In Situ Modification

Transmission Electron Microscopy of oriented Co84Cr14Ta2 thin films for longitudinal magnetic recording

1991 ◽  
Vol 49 ◽  
pp. 756-757
Author(s):  
T. P. Nolan
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Low Cost ◽  
Low Noise ◽  
Information Storage ◽  
High Coercivity ◽  
Magnetic Alloy ◽  
Magnetic Media ◽  
Transmission Electron

Thin film magnetic media are being used as low cost, high density forms of information storage. The development of this technology requires the study, at the sub-micron level, of morphological, crystallographic, and magnetic properties, throughout the depth of the deposited films. As the microstructure becomes increasingly fine, widi grain sizes approaching 100Å, the unique characterization capabilities of transmission electron microscopy (TEM) have become indispensable to the analysis of such thin film magnetic media.Films were deposited at 225°C, on two NiP plated Al substrates, one polished, and one circumferentially textured with a mean roughness of 55Å. Three layers, a 750Å chromium underlayer, a 600Å layer of magnetic alloy of composition Co84Cr14Ta2, and a 300Å amorphous carbon overcoat were then sputter deposited using a dc magnetron system at a power of 1kW, in a chamber evacuated below 10-6 torr and filled to 12μm Ar pressure. The textured medium is presently used in industry owing to its high coercivity, Hc, and relatively low noise. One important feature is that the coercivity in the circumferential read/write direction is significandy higher than that in the radial direction.

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