Influence of the terminal group on the thermal decomposition reactions of carboxylic acids on copper: nature of the carbonaceous film

2021 ◽  
Author(s):  
Robert Bavisotto ◽  
Resham Rana ◽  
Nicholas Hopper ◽  
Kaiming Hou ◽  
Wilfred T. Tysoe
Keyword(s):  
Thermal Decomposition ◽  
Carboxylic Acids ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Temperature Programmed Desorption ◽  
Terminal Group ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Decomposition Reactions ◽  
Temperature Programmed

The effect of the terminal groups on the nature of the films formed by the thermal decomposition of carboxylic acids on copper is studied in ultrahigh vacuum using temperature-programmed desorption (TPD), scanning tunneling microscopy (STM) and Auger electron spectroscopy (AES).

Thermal Decomposition Study of Dimethylaminoethanol on Si(100) by TPD and AES

2003 ◽  
Vol 10 (04) ◽  
pp. 685-689
Author(s):  
Sungwon Lim ◽  
Kijung Yong
Keyword(s):  
Thermal Decomposition ◽  
Carbon Monoxide ◽  
Auger Electron Spectroscopy ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Hydrogen Molecule ◽  
Temperature Programmed Desorption ◽  
Carbon And Nitrogen ◽  
Complete Decomposition ◽  
Temperature Programmed

Thermal decomposition and desorption of dimethylaminoethanol [dmaeH, ( CH 3)2 NC 2 H 4 OH ] on Si(100) was studied using temperature-programmed desorption (TPD) and Auger electron spectroscopy (AES). During heating of the sample up to 1100 K, methyliminoacetaldehyde, ethylene, carbon monoxide and hydrogen molecule were desorbed as the main desorption products from dmaeH on Si(100). After TPD experiments, carbon and nitrogen were detected by AES, indicating that complete decomposition of dmaeH also proceeded on Si(100).

scholarly journals Transition from silicene monolayer to thin Si films on Ag(111): comparison between experimental data and Monte Carlo simulation

2018 ◽  
Vol 9 ◽  
pp. 48-56 ◽  
Author(s):  
Alberto Curcella ◽  
Romain Bernard ◽  
Yves Borensztein ◽  
Silvia Pandolfi ◽  
Geoffroy Prévot
Keyword(s):  
Electron Spectroscopy ◽  
Auger Electron ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Low Energy Electron Diffraction ◽  
Different Temperatures ◽  
Low Energy Electron ◽  
Simple Growth ◽  
Si Films ◽  
Good Agreement

Scanning tunneling microscopy (STM), Auger electron spectroscopy (AES) and low energy electron diffraction have been used to follow the growth of Si films on Ag(111) at various temperatures. Using a simple growth model, we have simulated the distribution of film thickness as a function of coverage during evaporation, for the different temperatures. In the temperature regime where multilayer silicene has been claimed to form (470–500 K), a good agreement is found with AES intensity variations and STM measurements within a Ag surfactant mediated growth, whereas a model with multilayer silicene growth fails to reproduce the AES measurements.

Adsorption and Decomposition of Trimethylarsenic on GaAs(100)

1988 ◽  
Vol 131 ◽  
Author(s):  
J. R. Creighton
Keyword(s):  
Activation Energy ◽  
Electron Irradiation ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Temperature Programmed Desorption ◽  
Methyl Radicals ◽  
Arsenic Compounds ◽  
Group V ◽  
Desorption Activation Energy ◽  
Temperature Programmed

ABSTRACTAlkylated arsenic compounds have shown some promise as alternatives to arsine as the group-V source gas for GaAs MOCVD. However, little is known about the fundamental chemical interactions of these compounds with the GaAs surface. We have investigated the adsorption and reactivity of trimethylarsenic (TMAs) on GaAs(100) using temperature programmed desorption (TPD), Auger electron spectroscopy, and LEED. For the exposures and temperatures studied, TMAs did not pyrolytically decompose on the GaAs(100). TPD results indicate that TMAs chemisorbs, apparently non-dissociatively, and desorbs ≅330 K. Multilayers of TMAs desorb ≅140–160 K. Exposure of adsorbed TMAs to 70 eV electrons results in irreversible decomposition of the molecule. After electron irradiation, TPD shows that methyl radicals desorb at 660 K, which corresponds to a desorption activation energy of ≅40 kcal/mol. At higher temperatures, As2, H2, C2H2, and a smaller amount of methyl radicals desorb, and a small coverage of carbon remains on the surface.

The Reactivity of HCI and Methyltrichlorosilane with Silicon Carbide Surfaces

1992 ◽  
Vol 282 ◽  
Author(s):  
Mark D. Allendorf ◽  
Duane A. Outka
Keyword(s):  
Silicon Carbide ◽  
Auger Electron Spectroscopy ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Temperature Programmed Desorption ◽  
Stable Surface ◽  
Temperature Programmed

ABSTRACTThis work explores the reactivity of HCI and methyltrichlorosilane (MTS) with polycrystalline β-silicon carbide (SiC) surfaces using temperature-programmed desorption (TPD) and Auger electron spectroscopy. HCl is a corrosive gas that inhibits SiC deposition. The results show that HCl is adsorbed by SiC, forming a stable surface chloride that could inhibit SiC deposition. TPD shows that chlorine desorbs as HCI or SiCl4, confirming that HCl can etch SiC surfaces. Desorption is rate-limited by the breaking of Si-Cl bonds. MTS is also adsorbed by SiC; its desorption is similar to that of HCI.

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