Designing lateral spintronic devices with giant tunnel magnetoresistance and perfect spin injection efficiency based on transition metal dichalcogenides

2018 ◽  
Vol 20 (15) ◽  
pp. 10286-10291 ◽  
Author(s):  
Pei Zhao ◽  
Jianwei Li ◽  
Hao Jin ◽  
Lin Yu ◽  
Baibiao Huang ◽  
...  
Keyword(s):  
Transition Metal ◽  
Spin Injection ◽  
Transition Metal Dichalcogenides ◽  
Two Dimensional ◽  
Injection Efficiency ◽  
Tunnel Magnetoresistance ◽  
Spintronic Devices ◽  
Metal Dichalcogenides ◽  
Spin Filtering

A robust spin-filtering device based on two-dimensional TMDs.

scholarly journals Spintronics in Two-Dimensional Materials

2020 ◽  
Vol 12 (1) ◽  
Author(s):  
Yanping Liu ◽  
Cheng Zeng ◽  
Jiahong Zhong ◽  
Junnan Ding ◽  
Zhiming M. Wang ◽  
...  
Keyword(s):  
Spin Relaxation ◽  
High Efficiency ◽  
2D Materials ◽  
Spin Injection ◽  
Transition Metal Dichalcogenides ◽  
Information Storage ◽  
Oxide Semiconductor ◽  
Two Dimensional ◽  
Spintronic Devices ◽  
Metal Dichalcogenides

AbstractSpintronics, exploiting the spin degree of electrons as the information vector, is an attractive field for implementing the beyond Complemetary metal-oxide-semiconductor (CMOS) devices. Recently, two-dimensional (2D) materials have been drawing tremendous attention in spintronics owing to their distinctive spin-dependent properties, such as the ultra-long spin relaxation time of graphene and the spin–valley locking of transition metal dichalcogenides. Moreover, the related heterostructures provide an unprecedented probability of combining the different characteristics via proximity effect, which could remedy the limitation of individual 2D materials. Hence, the proximity engineering has been growing extremely fast and has made significant achievements in the spin injection and manipulation. Nevertheless, there are still challenges toward practical application; for example, the mechanism of spin relaxation in 2D materials is unclear, and the high-efficiency spin gating is not yet achieved. In this review, we focus on 2D materials and related heterostructures to systematically summarize the progress of the spin injection, transport, manipulation, and application for information storage and processing. We also highlight the current challenges and future perspectives on the studies of spintronic devices based on 2D materials.

scholarly journals Super-resolved Optical Mapping of Reactive Sulfur-Vacancies in Two-Dimensional Transition Metal Dichalcogenides

ACS Nano ◽  
2021 ◽  
Author(s):  
Miao Zhang ◽  
Martina Lihter ◽  
Tzu-Heng Chen ◽  
Michal Macha ◽  
Archith Rayabharam ◽  
...  
Keyword(s):  
Transition Metal ◽  
Optical Mapping ◽  
Transition Metal Dichalcogenides ◽  
Two Dimensional ◽  
Metal Dichalcogenides

Combined Healing and Doping of Transition Metal Dichalcogenides Through Molecular Functionalization

2021 ◽  
Author(s):  
Sai Manoj Gali ◽  
David Beljonne
Keyword(s):  
Transition Metal ◽  
Charge Transport ◽  
2D Materials ◽  
Transition Metal Dichalcogenides ◽  
Two Dimensional ◽  
Metal Dichalcogenides

Transition Metal Dichalcogenides (TMDCs) are emerging as promising two-dimensional (2D) materials. Yet, TMDCs are prone to inherent defects such as chalcogen vacancies, which are detrimental to charge transport. Passivation of...

scholarly journals Correction to “Rational Passivation of Sulfur Vacancy Defects in Two-Dimensional Transition Metal Dichalcogenides”

ACS Nano ◽  
2021 ◽  
Author(s):  
Hope Bretscher ◽  
Zhaojun Li ◽  
James Xiao ◽  
Diana Yuan Qiu ◽  
Sivan Refaely-Abramson ◽  
...  
Keyword(s):  
Transition Metal ◽  
Transition Metal Dichalcogenides ◽  
Two Dimensional ◽  
Sulfur Vacancy ◽  
Vacancy Defects ◽  
Metal Dichalcogenides

Substantial and stable magnetoresistance and spin conductance in phosphorene-based spintronic devices with Co electrodes

2021 ◽  
Author(s):  
Zhao Chen ◽  
Guojun Li ◽  
Haidi Wang ◽  
Qiong Tang ◽  
ZhongJun Li
Keyword(s):  
Spin Transport ◽  
Spin Injection ◽  
Injection Efficiency ◽  
Tunnel Magnetoresistance ◽  
Spintronic Devices ◽  
Magnetoresistance Ratio ◽  
Large Tunnel ◽  
Spin Conductance

Phosphorene-based device with fcc Co(111) electrodes shows excellent spin transport characteristics: large tunnel magnetoresistance ratio and stable spin injection efficiency.

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