Study the Catalyst Effect of NaCl on MoS2 Growth in Chemical Vapor Deposition Process

CrystEngComm ◽  
2021 ◽  
Author(s):  
Long Chen ◽  
Lingyu Zang ◽  
Luhua Chen ◽  
Jinchao Wu ◽  
Chengming Jiang ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Structural Characteristics ◽  
Optoelectronic Devices ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Two Dimensional ◽  
Next Generation ◽  
Cvd Growth ◽  
Catalyst Effect

Due to the unique two-dimensional (2D) structural characteristics, the mono-layer MoS2 is considered to be an ideal material for next-generation optoelectronic devices. At present, the chemical vapor deposition (CVD) growth...

Two-dimensional semiconducting and single-crystalline antimony trioxide directly-grown on monolayer graphene

2019 ◽  
Vol 55 (17) ◽  
pp. 2473-2476 ◽  
Author(s):  
Qinke Wu ◽  
Taehwan Jeong ◽  
Sanwoo Park ◽  
Jia Sun ◽  
Hyunmin Kang ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Synthesis And Characterization ◽  
Monolayer Graphene ◽  
Antimony Trioxide ◽  
Two Dimensional ◽  
Single Crystalline ◽  
Cvd Growth

The first successful synthesis and characterization of single-crystalline two-dimensional (2D) semiconducting antimony tri oxide (Sb2O3) by direct chemical vapor deposition (CVD) growth on monolayer graphene is presented herein.

scholarly journals Metalorganic chemical vapor deposition of InN quantum dots and nanostructures

2021 ◽  
Vol 10 (1) ◽  
Author(s):  
Caroline E. Reilly ◽  
Stacia Keller ◽  
Shuji Nakamura ◽  
Steven P. DenBaars
Keyword(s):  
Quantum Dots ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Near Infrared ◽  
Optoelectronic Devices ◽  
Chemical Vapor ◽  
Electromagnetic Spectrum ◽  
Material System ◽  
Metalorganic Chemical

AbstractUsing one material system from the near infrared into the ultraviolet is an attractive goal, and may be achieved with (In,Al,Ga)N. This III-N material system, famous for enabling blue and white solid-state lighting, has been pushing towards longer wavelengths in more recent years. With a bandgap of about 0.7 eV, InN can emit light in the near infrared, potentially overlapping with the part of the electromagnetic spectrum currently dominated by III-As and III-P technology. As has been the case in these other III–V material systems, nanostructures such as quantum dots and quantum dashes provide additional benefits towards optoelectronic devices. In the case of InN, these nanostructures have been in the development stage for some time, with more recent developments allowing for InN quantum dots and dashes to be incorporated into larger device structures. This review will detail the current state of metalorganic chemical vapor deposition of InN nanostructures, focusing on how precursor choices, crystallographic orientation, and other growth parameters affect the deposition. The optical properties of InN nanostructures will also be assessed, with an eye towards the fabrication of optoelectronic devices such as light-emitting diodes, laser diodes, and photodetectors.

Plasma-Enhanced Chemical Vapor Deposition of Two-Dimensional Materials for Applications

2021 ◽  
Vol 54 (4) ◽  
pp. 1011-1022
Author(s):  
Kongyang Yi ◽  
Donghua Liu ◽  
Xiaosong Chen ◽  
Jun Yang ◽  
Dapeng Wei ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Two Dimensional ◽  
Two Dimensional Materials
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