Controllable Synthesis of SnS2 Flakes and MoS2/SnS2 Heterostructures by Confined-space Chemical Vapor Deposition

CrystEngComm ◽  
2021 ◽  
Author(s):  
Quangui Fu ◽  
Haoxin Mo ◽  
Kostya Ostrikov ◽  
Xiaofeng Gu ◽  
Haiyan Nan ◽  
...  
Keyword(s):  
Vapor Deposition ◽  
Chemical Vapor ◽  
Absorption Capacity ◽  
Group Iv ◽  
Confined Space ◽  
Controllable Synthesis ◽  
Strong Light ◽  
Tin Disulfide ◽  
Photoelectric Properties ◽  
Metal Dichalcogenides

Two-dimensional (2D) group-IV metal dichalcogenides (GIVMDs) like chalcogenide tin disulfide (SnS2) have received widespread attention due to their diverse crystal structures, strong light absorption capacity and excellent photoelectric properties. However,...

Controllable Synthesis of High Quality Monolayer WS2 with Large Size on Sapphire Substrate by Chemical Vapor Deposition

2016 ◽  
Vol 37 (8) ◽  
pp. 984-989
Author(s):  
巩 哲 GONG Zhe ◽  
何大伟 HE Da-wei ◽  
王永生 WANG Yong-sheng ◽  
许海腾 XU Hai-teng ◽  
董艳芳 DONG Yan-fang
Keyword(s):  
Chemical Vapor Deposition ◽  
Sapphire Substrate ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Controllable Synthesis ◽  
High Quality ◽  
Large Size

scholarly journals Measurement of Quantum Yields of Monolayer TMDs Using Dye-Dispersed PMMA Thin Films

Nanomaterials ◽  
2020 ◽  
Vol 10 (6) ◽  
pp. 1032 ◽  
Author(s):  
Shrawan Roy ◽  
Anir S. Sharbirin ◽  
Yongjun Lee ◽  
Won Bin Kim ◽  
Tae Soo Kim ◽  
...  
Keyword(s):  
Vapor Deposition ◽  
Rhodamine 6G ◽  
Composite Films ◽  
Transition Metal Dichalcogenides ◽  
Chemical Vapor ◽  
Quantum Yields ◽  
Simple Protocol ◽  
Metal Dichalcogenides ◽  
Spatially Homogeneous ◽  
Reference Specimens

In general, the quantum yields (QYs) of monolayer transition metal dichalcogenides (1L-TMDs) are low, typically less than 1% in their pristine state, significantly limiting their photonic applications. Many methods have been reported to increase the QYs of 1L-TMDs; however, the technical difficulties involved in the reliable estimation of these QYs have prevented the general assessment of these methods. Herein, we demonstrate the estimation of the QYs of 1L-TMDs using a poly methyl methacrylate (PMMA) thin film embedded with rhodamine 6G (R6G) as a reference specimen for measuring the QYs of 1L-TMDs. The PMMA/R6G composite films with thicknesses of 80 and 300 nm demonstrated spatially homogeneous emissions with the incorporation of well-dispersed R6G molecules, and may, therefore, be used as ideal reference specimens for the QY measurement of 1L-TMDs. Using our reference specimens, for which the QY ranged from 5.4% to 22.2% depending on the film thickness and R6G concentrations, we measured the QYs of the exfoliated or chemical vapor deposition (CVD)-grown 1L-WS2, -MoSe2, -MoS2, and -WSe2 TMDs. The convenient procedure proposed in this study for preparing the thin reference films and the simple protocol for the QY estimation of 1L-TMDs may enable accurate comparisons of the absolute QYs between the 1L-TMD samples, thereby enabling the development of a method to improve the QY of 1L-TMDs.

Controllable synthesis of high quality monolayer WS2 on a SiO2/Si substrate by chemical vapor deposition

RSC Advances ◽  
2015 ◽  
Vol 5 (21) ◽  
pp. 15795-15799 ◽  
Author(s):  
Qi Fu ◽  
Wenhui Wang ◽  
Lei Yang ◽  
Jian Huang ◽  
Jingyu Zhang ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Tungsten Disulfide ◽  
Controllable Synthesis ◽  
Si Substrate ◽  
High Quality ◽  
Device Applications ◽  
Direct Band

Tungsten disulfide (WS2), with its transformation from indirect to direct band transitions when scaled down to a monolayer, exhibits great potential for future micro-device applications.

Controllable Synthesis of Various In2O3Submicron/Nanostructures Using Chemical Vapor Deposition

2009 ◽  
Vol 9 (5) ◽  
pp. 2173-2178 ◽  
Author(s):  
Wenyan Yin ◽  
Minhua Cao ◽  
Shengjun Luo ◽  
Changwen Hu ◽  
Bingqing Wei
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Controllable Synthesis

Electrical Characteristics of a Chemical Vapor Deposition-Grown MoS2 Monolayer-Based Field Effect Transistor

2020 ◽  
Vol 15 (6) ◽  
pp. 673-678
Author(s):  
Soo-Young Kang ◽  
Gil-Sung Kim ◽  
Min-Sung Kang ◽  
Won-Yong Lee ◽  
No-Won Park ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Transition Metal Dichalcogenides ◽  
Chemical Vapor ◽  
Electrical Characteristics ◽  
Mos2 Monolayer ◽  
2D Semiconductors ◽  
Metal Dichalcogenides

Transition metal dichalcogenides (TMDs) are layered two-dimensional (2D) semiconductors and have received significant attention for their potential application in field effect transistors (FETs), owing to their inherent characteristics. Among the various reported 2D TMD materials, monolayer (ML) molybdenum disulfide (MoS2) is being considered as a promising channel material for the fabrication of future transistors with gate lengths as small as ∼1 nm. In this work, we present chemical vapor deposition-grown triangular ML MoS2 with a lateral size of ∼22 μm and surface coverage of ∼47%, as well as a PMMA-based wet transfer process for depositing the as-grown triangular ML MoS2 flakes onto a SiO2 (∼100 nm)/p++-Si substrate. Additionally, we demonstrate the fabrication of an n-type MoS2-based FET device and study its electrical characteristics as a function of the gate voltage. Our FET device shows an excellent on/off ratio of ∼106, an off-state leakage current of less than 10– 12 A, and a field effect mobility of ∼10.4 cm2/Vs at 300 K.

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