Narrow-band red emitting oxonitridosilicate phosphor La4−xSr2+xSi5N12−xOx:Pr3+ (x ≈ 1.69)

2021 ◽  
Vol 57 (31) ◽  
pp. 3761-3764
Author(s):  
Hong-Wei Zheng ◽  
Xiao-Ming Wang ◽  
Heng-Wei Wei ◽  
Yu Zheng ◽  
Cong-Ling Yin ◽  
...  
Keyword(s):  
Blue Light ◽  
Narrow Band ◽  
Full Width ◽  
Half Maximum ◽  
Red Emission

The new oxonitridosilicate phosphor La2.31Sr3.69Si5N10.31O1.69:Pr3+could be excited with near-UV and blue light, and shows a narrow-band red emission peaking at 625 nm with a full width at half-maximum of 40 nm.

A thermally stable narrow-band green-emitting phosphor MgAl2O4:Mn2+for wide color gamut backlight display application

2019 ◽  
Vol 7 (27) ◽  
pp. 8192-8198 ◽  
Author(s):  
E. H. Song ◽  
Y. Y. Zhou ◽  
Y. Wei ◽  
X. X. Han ◽  
Z. R. Tao ◽  
...  
Keyword(s):  
Blue Light ◽  
Quantum Efficiency ◽  
Narrow Band ◽  
Thermally Stable ◽  
Full Width ◽  
Half Maximum ◽  
Color Gamut ◽  
Green Phosphor ◽  
Wide Color Gamut ◽  
Light Excitation

A stable narrow-band green phosphor MgAl2O4:Mn2+peaking at 525 nm with a full-width at half-maximum of 35 nm and a quantum efficiency of 45% upon 450 nm blue-light excitation is demonstrated, and which has good promising for wide color gamut backlight display.

InGaN/AlGaN Double-Heterostructure Blue Leds

1994 ◽  
Vol 339 ◽  
Author(s):  
Shuji Nakamura
Keyword(s):  
Blue Light ◽  
Full Width ◽  
Half Maximum ◽  
Ingan Layer ◽  
Peak Wavelength ◽  
Forward Voltage ◽  
High Brightness ◽  
Light Emitting ◽  
Double Heterostructure ◽  
First Time

ABSTRACTHigh-brightness InGaN/AlGaN double-heterostructure (DH) blue-light-emitting diodes (LEDs) with a luminous intensity of 1.2 cd were fabricated successfully for the first time. As an active layer, a Zn-doped InGaN layer was used. The peak wavelength and the full width at half-maximum of the electroluminescence were 450 nm and 70 nm, respectively. The forward voltage was as low as 3.6V at 20 mA.

scholarly journals Chevron-Type Dielectric Filter Set for Efficient Narrow-Band Laser Line Rejection in Raman Microspectrometers

1994 ◽  
Vol 48 (11) ◽  
pp. 1399-1402 ◽  
Author(s):  
Gerwin J. Puppels ◽  
Cees G. de Grauw ◽  
Maurice B. J. te Plate ◽  
Jan Greve
Keyword(s):  
High Throughput ◽  
Bandpass Filter ◽  
Narrow Band ◽  
Scattered Light ◽  
Laser Line ◽  
Full Width ◽  
Half Maximum ◽  
Dielectric Filter ◽  
Efficient Coupling ◽  
Anti Stokes

A chevron-type dielectric bandpass filter set is described which combines laser line rejection by a factor >108 with a high throughput of Raman scattered light (70%). The rejection bandwidth is 60 cm−1 full width at half-maximum. Stokes and anti-Stokes Raman spectra can be recorded simultaneously from approximately 20 cm−1 from the laser line. The filter set, moreover, takes care of efficient coupling of microscope and spectrometer, replacing an otherwise necessary beamsplitter.

Highly efficient and dual broad emitting light convertor: an option for next-generation plant growth LEDs

2019 ◽  
Vol 7 (12) ◽  
pp. 3617-3622 ◽  
Author(s):  
Mingcai Li ◽  
Xuejie Zhang ◽  
Haoran Zhang ◽  
Weibin Chen ◽  
Li Ma ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Plant Growth ◽  
Blue Light ◽  
Red Light ◽  
Light Sources ◽  
Full Width ◽  
Half Maximum ◽  
Next Generation ◽  
Led Light ◽  
Generation Plant

At present, blue-red composite LED light sources used for plant lighting are mainly composed of blue light and red light; the blue light is provided by gallium nitride LED chips, but the full-width at half-maximum (FWHW) is only approximately 25 nm, while the blue light required by plants for photosynthesis is wider.

scholarly journals Spectroscopic Studies of Laser-Based Far-Ultraviolet Plasma Light Source

2021 ◽  
Vol 11 (15) ◽  
pp. 6919
Author(s):  
Majid Masnavi ◽  
Martin Richardson
Keyword(s):  
Dense Plasma ◽  
Wavelength Region ◽  
Spectroscopic Studies ◽  
Radiation Hydrodynamics ◽  
Full Width ◽  
Half Maximum ◽  
Laser Plasmas ◽  
Series Of Experiments ◽  
Far Ultraviolet ◽  
Radiation Conversion

A series of experiments is described which were conducted to measure the absolute spectral irradiances of laser plasmas created from metal targets over the wavelength region of 123–164 nm by two separate 1.0 μm lasers, i.e., using 100 Hz, 10 ns, 2–20 kHz, 60–100 ns full-width-at-half-maximum pulses. A maximum radiation conversion efficiency of ≈ 3%/2πsr is measured over a wavelength region from ≈ 125 to 160 nm. A developed collisional-radiative solver and radiation-hydrodynamics simulations in comparison to the spectra detected by the Seya–Namioka-type monochromator reveal the strong broadband experimental radiations which mainly originate from bound–bound transitions of low-ionized charges superimposed on a strong continuum from a dense plasma with an electron temperature of less than 10 eV.

scholarly journals Time to peak and full width at half maximum in MR perfusion: valuable indicators for monitoring moyamoya patients after revascularization

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Adam Huang ◽  
Chung-Wei Lee ◽  
Hon-Man Liu
Keyword(s):  
Study Data ◽  
Unknown Etiology ◽  
Dynamic Susceptibility ◽  
Full Width ◽  
Half Maximum ◽  
Mr Perfusion ◽  
Dynamic Susceptibility Contrast ◽  
Time To Peak ◽  
Mr Perfusion Imaging ◽  
Outcome Monitoring

AbstractMoyamoya disease (MMD) is a chronic, steno-occlusive cerebrovascular disorder of unknown etiology. Surgical treatment is the only known effective method to restore blood flow to affected areas of the brain. However, there are lack of generally accepted noninvasive tools for therapeutic outcome monitoring. As dynamic susceptibility contrast (DSC) magnetic resonance imaging (MRI) is the standard MR perfusion imaging technique in the clinical setting, we investigated a dataset of nineteen pediatric MMD patients with one preoperational and multiple periodic DSC MRI examinations for four to thirty-eight months after indirect revascularization. A rigid gamma variate model was used to derive two nondeconvolution-based perfusion parameters: time to peak (TTP) and full width at half maximum (FWHM) for monitoring transitional bolus delay and dispersion changes respectively. TTP and FWHM values were normalized to the cerebellum. Here, we report that 74% (14/19) of patients improve in both TTP and FWHM measurements, and whereof 57% (8/14) improve more noticeably on FWHM. TTP is in good agreement with Tmax in estimating bolus delay. Our study data also suggest bolus dispersion estimated by FWHM is an additional, informative indicator in pediatric MMD monitoring.

Preparation of highly c-axis oriented AlN thin films on Hastelloy tapes with Y2O3 buffer layer for flexible SAW sensor applications

2016 ◽  
Vol 09 (02) ◽  
pp. 1650023 ◽  
Author(s):  
Bin Peng ◽  
Jianying Jiang ◽  
Guo Chen ◽  
Lin Shu ◽  
Jie Feng ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Smooth Surface ◽  
Piezoelectric Coefficient ◽  
Piezoelectric Properties ◽  
Mean Square ◽  
Full Width ◽  
Half Maximum ◽  
Sensor Applications ◽  
Saw Sensor ◽  
Y2o3 Buffer Layer

Highly c-axis oriented aluminum nitrade (AlN) films were successfully deposited on flexible Hastelloy tapes by middle-frequency magnetron sputtering. The microstructure and piezoelectric properties of the AlN films were investigated. The results show that the AlN films deposited directly on the bare Hastelloy substrate have rough surface with root mean square (RMS) roughness of 32.43[Formula: see text]nm and its full width at half maximum (FWHM) of the AlN (0002) peak is [Formula: see text]. However, the AlN films deposited on the Hastelloy substrate with Y2O3 buffer layer show smooth surface with RMS roughness of 5.46[Formula: see text]nm and its FWHM of the AlN (0002) peak is only [Formula: see text]. The piezoelectric coefficient d[Formula: see text] of the AlN films deposited on the Y2O3/Hastelloy substrate is larger than three times that of the AlN films deposited on the bare Hastelloy substrate. The prepared highly c-axis oriented AlN films can be used to develop high-temperature flexible SAW sensors.

scholarly journals Research of the anti-resonance pulse forming network and its application in the Marx generator

2016 ◽  
Vol 34 (4) ◽  
pp. 675-686 ◽  
Author(s):  
Z.-L. Pan ◽  
J.-H. Yang ◽  
X.-B. Cheng
Keyword(s):  
Equivalent Circuit ◽  
Rise Time ◽  
Pulse Width ◽  
Marx Generator ◽  
Full Width ◽  
Half Maximum ◽  
Compact Structure ◽  
Fall Time ◽  
Pulse Forming Network ◽  
Load Pulse

AbstractAn anti-resonance pulse forming network (PFN) has been designed, analyzed, and tested for its application in generating quasi-square pulses. According to the circuit simulations, a compact generator based on two/three-section network was constructed. Two-section network is applied in the generator due to its compact structure, while three-section network is employed for generating pulses with higher quality. When two-section network is applied in the generator, the full-width at half-maximum of the load pulse is 400 ns, at the same time, its rise time, flat top and fall time are 90, 180 and 217 ns, respectively. When the three-section network is applied with the same pulse width of the load pulse, the rise time of the output decreases to 60 ns, while the flat top increases to 240 ns and the fall time reduces to 109 ns. Meanwhile, this kind of network could be used to shape the output pulses of generators whose equivalent circuit is LC series discharge network, such as MARX generator, into quasi-square pulses. And the preliminary experiment demonstrates that anti-resonance network could work well on four-stage Marx generators. A sine pulse generated by the four-stage Marx generator is shaped into a quasi-square pulse with voltage of 11.8 kV and pulse width about 110 ns based on two-section anti-resonance network.

Photoluminescence of Erbium-Diffused Silicon

1996 ◽  
Vol 422 ◽  
Author(s):  
H. Horiguchi ◽  
T. Kinone ◽  
R. Saito ◽  
T. Kimura ◽  
T. Ikoma
Keyword(s):  
Room Temperature ◽  
Crystalline Silicon ◽  
Luminescence Spectra ◽  
Main Peak ◽  
Silicon Substrates ◽  
Annealing Atmosphere ◽  
Full Width ◽  
Half Maximum ◽  
Strong Luminescence ◽  
Fine Structures

AbstractErbium films are evaporated on crystalline silicon substrates and are thermally diffused into silicon in an Ar+02 or H2 flow. Very sharp Er3+-related luminescence peaks are observed around 1.54 μ m.The main peak as well as the fine structures of the luminescence spectra depend on the annealing atmosphere, suggesting different luminescence centers. The full width at half maximum (FWHM) of the main peaks is ≤ 0.5nm at 20K. Thermal diffusion with Al films on top of the Er films is found to increase the intensity of the Er3+-related peaks greatly. The temperature dependence between 20 K and room temperature is relatively small, and a strong luminescence is obtained at room temperature.

scholarly journals Supershort avalanche electron beam generation in gases

2008 ◽  
Vol 26 (4) ◽  
pp. 605-617 ◽  
Author(s):  
V.F. Tarasenko ◽  
E.H. Baksht ◽  
A.G. Burachenko ◽  
I.D. Kostyrya ◽  
M.I. Lomaev ◽  
...  
Keyword(s):  
High Pressure ◽  
Electron Beam ◽  
Atmospheric Pressure ◽  
Electron Beams ◽  
Solid Angle ◽  
Generation Mechanism ◽  
Full Width ◽  
Half Maximum ◽  
Electron Beam Pulse ◽  
Supershort Avalanche Electron Beam

AbstractThis paper reports on the properties of a supershort avalanche electron beam generated in the air or other gases under atmospheric pressure and gives the analysis of a generation mechanism of supershort avalanche electron beam, as well as methods of such electron beams registration. It is reported that in the air under the pressure of 1 atm, a supershort (<100 ps) avalanche electron beam is formed in the solid angle more than 2π steradian. The electron beam has been obtained behind a 45 µm thick Al-Be foil in SF6 and Xe under the pressure of 2 atm, and in He, under the pressure of about 15 atm. It is shown that in SF6 under the high pressure (>1 atm) duration (full width at half maximum) of supershort avalanche electron beam pulse is about 150 ps.

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