Carrier and vacancy mediated ferrimagnetism in Cu doped rutile TiO2

2021 ◽  
Author(s):  
Qiaolu Lin ◽  
Nannan Xu ◽  
Gongping Li ◽  
Zhengfang Qian ◽  
Huan Liu ◽  
...  
Keyword(s):  
Magnetic Properties ◽  
Charge Carriers ◽  
Rutile Tio2 ◽  
Impurity Atoms ◽  
O Vacancy

The magnetic properties of Cu doped rutile TiO2 modulated by valency, concentration and distribution of substituted impurity atoms, and subjected to O vacancy and charge carriers.

scholarly journals Influence of Li2CO3 addition on electrical and magnetic properties of Ni0.6Mg0.4Fe2O4

2020 ◽  
Vol 10 (03) ◽  
pp. 2050003
Author(s):  
M. R. Hassan ◽  
M. T. Islam ◽  
M. N. I. Khan
Keyword(s):  
Magnetic Properties ◽  
Single Phase ◽  
Low Frequency ◽  
Solid State Reaction Method ◽  
Charge Carriers ◽  
X Ray Diffraction ◽  
X Ray ◽  
Electrical And Magnetic Properties ◽  
Frequency Regime ◽  
Xrd Patterns

In this research, influence of adding Li2CO3 (at 0%, 2%, 4%, 6%) on electrical and magnetic properties of [Formula: see text][Formula: see text]Fe2O4 (with 60% Ni and 40% Mg) ferrite has been studied. The samples are prepared by solid state reaction method and sintered at 1300∘C for 6[Formula: see text]h. X-ray diffraction (XRD) patterns show the samples belong to single-phase cubic structure without any impurity phase. The magnetic properties (saturation magnetization and coercivity) of the samples have been investigated by VSM and found that the higher concentration of Li2CO3 reduces the hysteresis loss. DC resistivity increases with Li2CO3 contents whereas it decreases initially and then becomes constant at lower value with temperature which indicates that the studied samples are semiconductor. The dielectric dispersion occurs at a low-frequency regime and the loss peaks are formed in a higher frequency regime, which are due to the presence of resonance between applied frequency and hopping frequency of charge carriers. Notably, the loss peaks are shifted to the lower frequency with Li2CO3 additions.

Magnetic properties of rutile TiO2-1/6 from first-principles calculations

2010 ◽  
Vol 4 (8-9) ◽  
pp. 236-238 ◽  
Author(s):  
Guang-bing Han ◽  
Shu-jun Hu ◽  
Shi-shen Yan ◽  
Shi-shou Kang ◽  
Liang-mo Mei
Keyword(s):  
Magnetic Properties ◽  
First Principles ◽  
First Principles Calculations ◽  
Rutile Tio2

scholarly journals The Electronic and Magnetic Properties of Multi-Atom Doped Black Phosphorene

Nanomaterials ◽  
2019 ◽  
Vol 9 (2) ◽  
pp. 311 ◽  
Author(s):  
Ke Wang ◽  
Hai Wang ◽  
Min Zhang ◽  
Wei Zhao ◽  
Yan Liu ◽  
...  
Keyword(s):  
Magnetic Properties ◽  
Antiferromagnetic Order ◽  
Dopant Atom ◽  
Spin Distribution ◽  
Electronic And Magnetic Properties ◽  
Impurity Atoms ◽  
Substitutional Doping ◽  
Black Phosphorene ◽  
The Stability ◽  
Cl Atoms

Recently, substitutional doping is proved to be an effective route to induce magnetism to black phosphorene for its application in spintronics. Herein, we investigate the thermodynamic stability, electronic and magnetic properties of doped black phosphorene with multi Al or Cl atoms using first-principles calculations. We find these doped phosphorenes are thermodynamically stable at 0 K and the stability first improves and then deteriorates with the number of dopant atom increasing. Corresponding to the variety of stability, the amount of electrons transferred between impurity and neighboring phosphorus atoms also first increase and then reduce. However, the band gap of Al-doped phosphorene reduces monotonically from 0.44 eV to 0.13 eV while that of Cl-doped phosphorene first decreases from 0.10 eV to 0 and then becomes flat, which is a result of the impurity levels emerging and splitting. Besides, in doped phosphorenes with an even number of impurity atoms, the antiferromagnetic order is favored by energy. Through computing the magnetic moment and spin distribution, we further confirm the antiferromagnetic order existing only in the doped phosphorenes with two and four Cl atoms. These results may provide some help for future applications of black phosphorene in spintronics.

Magnetic properties of Sm-doped rutile TiO2 nanorods

2016 ◽  
Vol 687 ◽  
pp. 294-299 ◽  
Author(s):  
Li-Ting Tseng ◽  
Xi Luo ◽  
Sean Li ◽  
Jiabao Yi
Keyword(s):  
Magnetic Properties ◽  
Tio2 Nanorods ◽  
Rutile Tio2

Influence of Single Impurity Atoms on the Structure, Electronic, and Magnetic Properties of Ni5Clusters

2007 ◽  
Vol 111 (11) ◽  
pp. 2067-2076 ◽  
Author(s):  
Petko St. Petkov ◽  
Georgi N. Vayssilov ◽  
Sven Krüger ◽  
Notker Rösch
Keyword(s):  
Magnetic Properties ◽  
Electronic And Magnetic Properties ◽  
Impurity Atoms ◽  
Single Impurity

scholarly journals Study of electrokinetic and magnetic properties of ZrNi1-xRhxSn semiconductive solid solution

2018 ◽  
Vol 19 (1) ◽  
pp. 21-28
Author(s):  
L.P. Romaka ◽  
Yu.V. Stadnyk ◽  
V.A. Romaka ◽  
A.M. Horyn ◽  
V.Ya. Krayovskyy
Keyword(s):  
Solid Solution ◽  
Magnetic Properties ◽  
Energy State ◽  
Charge Carriers ◽  
Structural Defects ◽  
Magnetic Characteristics ◽  
Main Charge ◽  
Deep Donor ◽  
Thermopower Coefficient ◽  
Donor Acceptor

The features of electrokinetic, energy state and magnetic characteristics of ZrNi1-xRhxSn semiconductive solid solution were investigated in the ranges: T = 80-400 K, x = 0-0.10. It was shown that substitution of Ni atoms (3d84s2) by Rh atoms (4d85s1) in the structure of ZrNiSn compound generated the structural defects with acceptor nature, and holes became the main charge carriers in the ZrNi1-xRhxSn at low temperature. Based on analysis of the motion rate of the Fermi level ΔεF/Δх in ZrNi1-xRhxSn to the valence band and change of sign of thermopower coefficient from positive to negative it was suggested that the structural defects of acceptor and donor natures were generated simultaneously (donor-acceptor pairs), and deep donor band ɛD2 was formed.

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